{"id":"https://openalex.org/W4391183831","doi":"https://doi.org/10.1109/asicon58565.2023.10396558","title":"Complementary Field-Effect Transistors: From Silicon to 2D Materials","display_name":"Complementary Field-Effect Transistors: From Silicon to 2D Materials","publication_year":2023,"publication_date":"2023-10-24","ids":{"openalex":"https://openalex.org/W4391183831","doi":"https://doi.org/10.1109/asicon58565.2023.10396558"},"language":"en","primary_location":{"id":"doi:10.1109/asicon58565.2023.10396558","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon58565.2023.10396558","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE 15th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5056796025","display_name":"Mansun Chan","orcid":"https://orcid.org/0000-0002-5104-7410"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]},{"id":"https://openalex.org/I889458895","display_name":"University of Hong Kong","ror":"https://ror.org/02zhqgq86","country_code":"HK","type":"education","lineage":["https://openalex.org/I889458895"]}],"countries":["HK"],"is_corresponding":true,"raw_author_name":"Mansun Chan","raw_affiliation_strings":["The Hong Kong University of Science and Technology,Department of Electronic and Computer Engineering,Kowloon,Hong Kong","Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong"],"affiliations":[{"raw_affiliation_string":"The Hong Kong University of Science and Technology,Department of Electronic and Computer Engineering,Kowloon,Hong Kong","institution_ids":["https://openalex.org/I200769079","https://openalex.org/I889458895"]},{"raw_affiliation_string":"Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5056796025"],"corresponding_institution_ids":["https://openalex.org/I200769079","https://openalex.org/I889458895"],"apc_list":null,"apc_paid":null,"fwci":0.1968,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.43798849,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":95,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.8011558055877686},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6535582542419434},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.620067298412323},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.589841902256012},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.5330238342285156},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.47007304430007935},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.41499239206314087},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3664604425430298},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.362135648727417},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.27573686838150024},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2497376799583435},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.05833393335342407}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.8011558055877686},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6535582542419434},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.620067298412323},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.589841902256012},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.5330238342285156},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.47007304430007935},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.41499239206314087},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3664604425430298},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.362135648727417},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.27573686838150024},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2497376799583435},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.05833393335342407},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/asicon58565.2023.10396558","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon58565.2023.10396558","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE 15th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},{"id":"pmh:oai:repository.hkust.edu.hk:1783.1-135995","is_oa":false,"landing_page_url":"https://repository.hkust.edu.hk/ir/Record/1783.1-135995","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Conference paper"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W143489281","https://openalex.org/W2104177514","https://openalex.org/W2137390828","https://openalex.org/W2142042363","https://openalex.org/W2152866799","https://openalex.org/W2158544743","https://openalex.org/W2899004836","https://openalex.org/W3006157302","https://openalex.org/W3129803256","https://openalex.org/W3136856580","https://openalex.org/W3188897568","https://openalex.org/W3210186919","https://openalex.org/W4210799799","https://openalex.org/W4225740429","https://openalex.org/W4366505938"],"related_works":["https://openalex.org/W2104300577","https://openalex.org/W4206445530","https://openalex.org/W2771786520","https://openalex.org/W2174354966","https://openalex.org/W2027381561","https://openalex.org/W2365494153","https://openalex.org/W2072424359","https://openalex.org/W2061674058","https://openalex.org/W2750055590","https://openalex.org/W1990516236"],"abstract_inverted_index":{"This":[0],"study":[1],"presents":[2],"a":[3],"comprehensive":[4],"review":[5],"of":[6,9,54,64,80],"the":[7,25,29,52,58,61,65,72,78,84],"evolution":[8],"monolithic":[10,85],"Complementary":[11],"Field-Effect":[12],"transistors":[13,82],"(CFET)":[14],"from":[15],"laboratory":[16],"prototypes":[17],"to":[18],"pre-":[19],"production":[20],"readiness.":[21],"The":[22],"paper":[23],"analyzes":[24],"challenges":[26],"encountered":[27],"in":[28],"fabrication":[30],"process,":[31],"including":[32],"insulator":[33],"formation":[34],"between":[35,46],"active":[36],"layers,":[37],"deep":[38],"ion":[39],"implantation":[40],"for":[41],"bottom":[42,49],"devices,":[43],"selective":[44],"contact":[45],"top":[47],"and":[48,51],"transistors,":[50],"layout":[53],"stacked":[55],"transistors.":[56],"Furthermore,":[57],"research":[59],"investigates":[60],"potential":[62],"implementation":[63],"CFET":[66,86],"structure":[67],"using":[68],"2D":[69,81],"materials":[70],"following":[71],"nano-sheet":[73],"architecture.":[74],"An":[75],"evaluation":[76],"on":[77],"compatibility":[79],"with":[83],"will":[87],"also":[88],"be":[89],"provided.":[90]},"counts_by_year":[{"year":2025,"cited_by_count":2}],"updated_date":"2026-03-04T09:10:02.777135","created_date":"2025-10-10T00:00:00"}