{"id":"https://openalex.org/W4391183577","doi":"https://doi.org/10.1109/asicon58565.2023.10396215","title":"Scalable Compact Model for High-frequency GaN-HEMTs","display_name":"Scalable Compact Model for High-frequency GaN-HEMTs","publication_year":2023,"publication_date":"2023-10-24","ids":{"openalex":"https://openalex.org/W4391183577","doi":"https://doi.org/10.1109/asicon58565.2023.10396215"},"language":"en","primary_location":{"id":"doi:10.1109/asicon58565.2023.10396215","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/asicon58565.2023.10396215","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE 15th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101851241","display_name":"Xing Zhou","orcid":"https://orcid.org/0000-0003-2509-6726"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":true,"raw_author_name":"Xing Zhou","raw_affiliation_strings":["Nanyang Technological Unicersity,School of Electrical and Electronic Engineering,Singapore","School of Electrical and Electronic Engineering, Nanyang Technological Unicersity, Singapore"],"affiliations":[{"raw_affiliation_string":"Nanyang Technological Unicersity,School of Electrical and Electronic Engineering,Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Nanyang Technological Unicersity, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5033708105","display_name":"Siau Ben Chiah","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Siau Ben Chiah","raw_affiliation_strings":["New Silicon Corporation Pte Ltd,Singapore","New Silicon Corporation Pte Ltd, Singapore"],"affiliations":[{"raw_affiliation_string":"New Silicon Corporation Pte Ltd,Singapore","institution_ids":[]},{"raw_affiliation_string":"New Silicon Corporation Pte Ltd, Singapore","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5101851241"],"corresponding_institution_ids":["https://openalex.org/I172675005"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.12384992,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9957000017166138,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9922999739646912,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.603096604347229},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5730417370796204},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4960084855556488},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4124312400817871},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40811917185783386},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12025657296180725}],"concepts":[{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.603096604347229},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5730417370796204},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4960084855556488},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4124312400817871},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40811917185783386},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12025657296180725},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon58565.2023.10396215","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/asicon58565.2023.10396215","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE 15th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320311649","display_name":"Ministry of Education","ror":"https://ror.org/036nq5137"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W4246450666","https://openalex.org/W2898370298","https://openalex.org/W4388998267","https://openalex.org/W4390401159","https://openalex.org/W2744391499","https://openalex.org/W3120461830","https://openalex.org/W4230250635","https://openalex.org/W3041790586","https://openalex.org/W2018879842"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,21],"compact":[4,23,139],"model":[5,24,31,59,88,113],"for":[6,25,42,91],"GaN-HEMT":[7,41,111],"high-frequency":[8,52],"operations":[9],"that":[10,48,84],"is":[11,28,60,89,114],"scalable":[12,57,90,110],"over":[13],"dc":[14],"bias,":[15],"geometry,":[16],"and":[17,35,98,101,123,130,141],"doping":[18,103],"concentrations.":[19],"Specifically,":[20],"\"surface-potential-based\"":[22],"(intrinsic)":[26],"GaN-HEMTs":[27],"extended":[29,145],"to":[30,75,134,137,146],"the":[32,40,85,107],"\"sub-surface\"":[33],"(substrate)":[34],"access":[36],"(extrinsic)":[37],"regions":[38],"of":[39],"capturing":[43],"its":[44],"nonlinear":[45],"current/charge":[46],"behaviors":[47],"are":[49],"important":[50],"at":[51,78],"operations.":[53],"A":[54],"quiescent-bias":[55],"(Q-point)":[56],"RF":[58,87,112,138,148],"not":[61],"easily":[62],"achievable":[63],"by":[64],"conventional":[65],"sub-circuit":[66],"approaches":[67,136],"in":[68,116],"which":[69],"different":[70,79,92],"R/C":[71],"element":[72],"values":[73],"need":[74],"be":[76,144],"extracted":[77],"Q-points.":[80],"Preliminary":[81],"results":[82],"show":[83],"developed":[86],"Q-points":[93],"as":[94,96,150],"well":[95],"gate":[97],"gate-source/drain":[99],"lengths":[100],"substrate":[102],"concentrations":[104],"without":[105],"refitting":[106],"model.":[108],"The":[109,127],"validated":[115],"comparison":[117],"with":[118],"S-parameters":[119],"from":[120],"numerical":[121],"simulations":[122],"available":[124],"measurement":[125],"data.":[126],"proposed":[128],"concepts":[129],"methodology":[131],"will":[132],"lead":[133],"new":[135],"modeling,":[140],"it":[142],"can":[143],"Si-MOSFETs":[147],"modeling":[149],"well.":[151]},"counts_by_year":[],"updated_date":"2025-12-21T23:12:01.093139","created_date":"2025-10-10T00:00:00"}