{"id":"https://openalex.org/W4200068263","doi":"https://doi.org/10.1109/asicon52560.2021.9620529","title":"Ultra-low Power Access Strategy for Process-Voltage-Temperature Aware STT-MRAM","display_name":"Ultra-low Power Access Strategy for Process-Voltage-Temperature Aware STT-MRAM","publication_year":2021,"publication_date":"2021-10-26","ids":{"openalex":"https://openalex.org/W4200068263","doi":"https://doi.org/10.1109/asicon52560.2021.9620529"},"language":"en","primary_location":{"id":"doi:10.1109/asicon52560.2021.9620529","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon52560.2021.9620529","pdf_url":null,"source":{"id":"https://openalex.org/S4363607945","display_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102436544","display_name":"You-You Zhang","orcid":null},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"You-You Zhang","raw_affiliation_strings":["National ASIC System Engineering Center, Southeast University, Nanjing, China","National ASIC System Engineering Technology Research Center (China)","SEU - Southeast University = Dongnan Daxue = \u4e1c\u5357\u5927\u5b66 (2 Sipailou Street, Xuanwu District, Nanjing, Jiangsu, 210096 - China)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National ASIC System Engineering Center, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]},{"raw_affiliation_string":"National ASIC System Engineering Technology Research Center (China)","institution_ids":[]},{"raw_affiliation_string":"SEU - Southeast University = Dongnan Daxue = \u4e1c\u5357\u5927\u5b66 (2 Sipailou Street, Xuanwu District, Nanjing, Jiangsu, 210096 - China)","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018022196","display_name":"L\u00edrida Naviner","orcid":"https://orcid.org/0000-0002-6320-4153"},"institutions":[{"id":"https://openalex.org/I12356871","display_name":"T\u00e9l\u00e9com Paris","ror":"https://ror.org/01naq7912","country_code":"FR","type":"education","lineage":["https://openalex.org/I12356871","https://openalex.org/I205703379","https://openalex.org/I4210145102"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Lirida Naviner","raw_affiliation_strings":["T\u00e9l\u00e9com Paris, France","COMELEC - D\u00e9partement Communications & Electronique (19 Place Marguerite Perey 91120 PALAISEAU - France)","SSH - Secure and Safe Hardware (T\u00e9l\u00e9com Paris 19 Place Marguerite Perey 91120 Palaiseau - France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"T\u00e9l\u00e9com Paris, France","institution_ids":["https://openalex.org/I12356871"]},{"raw_affiliation_string":"COMELEC - D\u00e9partement Communications & Electronique (19 Place Marguerite Perey 91120 PALAISEAU - France)","institution_ids":[]},{"raw_affiliation_string":"SSH - Secure and Safe Hardware (T\u00e9l\u00e9com Paris 19 Place Marguerite Perey 91120 Palaiseau - France)","institution_ids":["https://openalex.org/I12356871"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5052490965","display_name":"Hao Cai","orcid":"https://orcid.org/0000-0001-9251-0574"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hao Cai","raw_affiliation_strings":["National ASIC System Engineering Center, Southeast University, Nanjing, China","National ASIC System Engineering Technology Research Center (China)","SEU - Southeast University = Dongnan Daxue = \u4e1c\u5357\u5927\u5b66 (2 Sipailou Street, Xuanwu District, Nanjing, Jiangsu, 210096 - China)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National ASIC System Engineering Center, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]},{"raw_affiliation_string":"National ASIC System Engineering Technology Research Center (China)","institution_ids":[]},{"raw_affiliation_string":"SEU - Southeast University = Dongnan Daxue = \u4e1c\u5357\u5927\u5b66 (2 Sipailou Street, Xuanwu District, Nanjing, Jiangsu, 210096 - China)","institution_ids":["https://openalex.org/I76569877"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.39033372,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12405","display_name":"Characterization and Applications of Magnetic Nanoparticles","score":0.9965000152587891,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12692","display_name":"Magnetic Field Sensors Techniques","score":0.9965000152587891,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.8353679180145264},{"id":"https://openalex.org/keywords/tunnel-magnetoresistance","display_name":"Tunnel magnetoresistance","score":0.5517477989196777},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5391945838928223},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5051272511482239},{"id":"https://openalex.org/keywords/process-variation","display_name":"Process variation","score":0.45361095666885376},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4528348445892334},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.4488877058029175},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4464013874530792},{"id":"https://openalex.org/keywords/energy-consumption","display_name":"Energy consumption","score":0.4312087297439575},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4241664707660675},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.41786664724349976},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.41243264079093933},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.41061389446258545},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.405484139919281},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.381546288728714},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22453898191452026},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.2238328456878662},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.16985753178596497},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.14133891463279724},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10454228520393372},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.0769854187965393}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.8353679180145264},{"id":"https://openalex.org/C56202322","wikidata":"https://www.wikidata.org/wiki/Q1884383","display_name":"Tunnel magnetoresistance","level":3,"score":0.5517477989196777},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5391945838928223},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5051272511482239},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.45361095666885376},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4528348445892334},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.4488877058029175},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4464013874530792},{"id":"https://openalex.org/C2780165032","wikidata":"https://www.wikidata.org/wiki/Q16869822","display_name":"Energy consumption","level":2,"score":0.4312087297439575},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4241664707660675},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.41786664724349976},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.41243264079093933},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.41061389446258545},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.405484139919281},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.381546288728714},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22453898191452026},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.2238328456878662},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.16985753178596497},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.14133891463279724},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10454228520393372},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.0769854187965393},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/asicon52560.2021.9620529","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon52560.2021.9620529","pdf_url":null,"source":{"id":"https://openalex.org/S4363607945","display_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},{"id":"pmh:oai:HAL:hal-04477660v1","is_oa":false,"landing_page_url":"https://hal.science/hal-04477660","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL (Le Centre pour la Communication Scientifique Directe)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I1294671590","host_organization_name":"Centre National de la Recherche Scientifique","host_organization_lineage":["https://openalex.org/I1294671590"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"2021 IEEE 14th International Conference on ASIC (ASICON), Oct 2021, Kunming, China. pp.1-4, ⟨10.1109/ASICON52560.2021.9620529⟩","raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.9100000262260437}],"awards":[],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2160372845","https://openalex.org/W1545438037","https://openalex.org/W1977755618","https://openalex.org/W2131964951","https://openalex.org/W2897770615","https://openalex.org/W4226197542","https://openalex.org/W4214681414","https://openalex.org/W1890124164","https://openalex.org/W2032117939","https://openalex.org/W2325040699"],"abstract_inverted_index":{"With":[0],"the":[1,12,39,73,95],"development":[2],"of":[3,15,81],"circuit":[4,76],"integration,":[5],"low":[6],"power":[7,23],"consumption":[8],"design":[9,13],"has":[10],"become":[11],"challenge":[14],"on-chip":[16],"memory.":[17],"This":[18],"work":[19],"focuses":[20],"on":[21,38,58],"ultra-low":[22],"access":[24,108],"strategy":[25],"for":[26,51,102],"STT-MRAM.":[27],"A":[28],"high":[29],"margin":[30],"voltage":[31,126],"sensing":[32,75],"amplifier":[33],"(VSA)":[34],"is":[35,49,55,110],"implemented":[36],"based":[37,57],"bit-line":[40],"(BL)":[41],"parasitic":[42],"capacitance,":[43],"whereas":[44],"a":[45,78],"pulse-detect":[46],"write":[47],"self-termination":[48,96],"included":[50],"MRAM":[52,107],"writing.":[53],"Simulation":[54],"performed":[56],"28-nm":[59],"CMOS":[60],"and":[61,124],"40-nm":[62],"CD":[63],"magnetic":[64],"tunnel":[65],"junction":[66],"(MTJ).":[67],"Monte":[68],"Carlo":[69],"simulation":[70],"show":[71],"that":[72],"proposed":[74],"achieves":[77,98],"reading":[79],"yield":[80],"over":[82],"98%":[83],"as":[84,86],"well":[85],"38%":[87],"energy":[88,100],"saving":[89,101],"compared":[90],"to":[91,112],"previous":[92],"work.":[93],"Meanwhile,":[94],"scheme":[97],"an":[99],"more":[103],"than":[104],"80%.":[105],"These":[106],"strategies":[109],"well-adapted":[111],"process-voltage-temperature":[113],"(PVT)":[114],"variations":[115],"including":[116],"Tunnel":[117],"Magneto":[118],"Resistance":[119],"(TMR)":[120],"(20%-200%),":[121],"temperature":[122],"(0\u2103-120\u2103)":[123],"supply":[125],"(0.6V-1.8V).":[127]},"counts_by_year":[],"updated_date":"2026-08-26T07:47:46.906454","created_date":"2025-10-10T00:00:00"}