{"id":"https://openalex.org/W4200337170","doi":"https://doi.org/10.1109/asicon52560.2021.9620511","title":"Fabrication, Characterization and Modeling of CVD based Amorphous Silicon Resistor","display_name":"Fabrication, Characterization and Modeling of CVD based Amorphous Silicon Resistor","publication_year":2021,"publication_date":"2021-10-26","ids":{"openalex":"https://openalex.org/W4200337170","doi":"https://doi.org/10.1109/asicon52560.2021.9620511"},"language":"en","primary_location":{"id":"doi:10.1109/asicon52560.2021.9620511","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon52560.2021.9620511","pdf_url":null,"source":{"id":"https://openalex.org/S4363607945","display_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100431810","display_name":"Wei Liu","orcid":"https://orcid.org/0000-0002-4403-737X"},"institutions":[{"id":"https://openalex.org/I2801618472","display_name":"PLA Rocket Force University of Engineering","ror":"https://ror.org/00gg5zj35","country_code":"CN","type":"education","lineage":["https://openalex.org/I2801618472"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Wei Liu","raw_affiliation_strings":["School of Automation, Rocket Force University of Engineering, Xi'an, China"],"affiliations":[{"raw_affiliation_string":"School of Automation, Rocket Force University of Engineering, Xi'an, China","institution_ids":["https://openalex.org/I2801618472"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100412433","display_name":"Gang Liu","orcid":"https://orcid.org/0000-0002-3142-9323"},"institutions":[{"id":"https://openalex.org/I2801618472","display_name":"PLA Rocket Force University of Engineering","ror":"https://ror.org/00gg5zj35","country_code":"CN","type":"education","lineage":["https://openalex.org/I2801618472"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Gang Liu","raw_affiliation_strings":["School of Automation, Rocket Force University of Engineering, Xi'an, China"],"affiliations":[{"raw_affiliation_string":"School of Automation, Rocket Force University of Engineering, Xi'an, China","institution_ids":["https://openalex.org/I2801618472"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101567815","display_name":"Bing He","orcid":"https://orcid.org/0000-0002-0084-2596"},"institutions":[{"id":"https://openalex.org/I2801618472","display_name":"PLA Rocket Force University of Engineering","ror":"https://ror.org/00gg5zj35","country_code":"CN","type":"education","lineage":["https://openalex.org/I2801618472"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bing He","raw_affiliation_strings":["School of Automation, Rocket Force University of Engineering, Xi'an, China"],"affiliations":[{"raw_affiliation_string":"School of Automation, Rocket Force University of Engineering, Xi'an, China","institution_ids":["https://openalex.org/I2801618472"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100436656","display_name":"Jie Zhang","orcid":"https://orcid.org/0000-0001-8829-0425"},"institutions":[{"id":"https://openalex.org/I2801618472","display_name":"PLA Rocket Force University of Engineering","ror":"https://ror.org/00gg5zj35","country_code":"CN","type":"education","lineage":["https://openalex.org/I2801618472"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jie Zhang","raw_affiliation_strings":["School of Automation, Rocket Force University of Engineering, Xi'an, China"],"affiliations":[{"raw_affiliation_string":"School of Automation, Rocket Force University of Engineering, Xi'an, China","institution_ids":["https://openalex.org/I2801618472"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085946551","display_name":"Hanlin Qin","orcid":"https://orcid.org/0009-0009-0412-0345"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hanlin Qin","raw_affiliation_strings":["School of Physics and Optoelectronic Engineering, Xidian University, Xi'an, China"],"affiliations":[{"raw_affiliation_string":"School of Physics and Optoelectronic Engineering, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101399148","display_name":"Shuai Yuan","orcid":"https://orcid.org/0000-0002-1997-9752"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shuai Yuan","raw_affiliation_strings":["School of Physics and Optoelectronic Engineering, Xidian University, Xi'an, China"],"affiliations":[{"raw_affiliation_string":"School of Physics and Optoelectronic Engineering, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5100431810"],"corresponding_institution_ids":["https://openalex.org/I2801618472"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.21963096,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11301","display_name":"Advanced Surface Polishing Techniques","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11301","display_name":"Advanced Surface Polishing Techniques","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7932212352752686},{"id":"https://openalex.org/keywords/ohmic-contact","display_name":"Ohmic contact","score":0.7735085487365723},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.7048002481460571},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.6481378078460693},{"id":"https://openalex.org/keywords/amorphous-solid","display_name":"Amorphous solid","score":0.6095178127288818},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.5667279958724976},{"id":"https://openalex.org/keywords/amorphous-silicon","display_name":"Amorphous silicon","score":0.5586926341056824},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.556138277053833},{"id":"https://openalex.org/keywords/contact-resistance","display_name":"Contact resistance","score":0.4974119961261749},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.45072296261787415},{"id":"https://openalex.org/keywords/microelectromechanical-systems","display_name":"Microelectromechanical systems","score":0.4440976083278656},{"id":"https://openalex.org/keywords/tin","display_name":"Tin","score":0.43409883975982666},{"id":"https://openalex.org/keywords/polysilicon-depletion-effect","display_name":"Polysilicon depletion effect","score":0.42926907539367676},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.374783992767334},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.36180463433265686},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3343852162361145},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2733769416809082},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2591822147369385},{"id":"https://openalex.org/keywords/crystalline-silicon","display_name":"Crystalline silicon","score":0.21947339177131653},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.12530091404914856},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.10536497831344604},{"id":"https://openalex.org/keywords/crystallography","display_name":"Crystallography","score":0.0753437876701355},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.0675777792930603}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7932212352752686},{"id":"https://openalex.org/C138230450","wikidata":"https://www.wikidata.org/wiki/Q2016597","display_name":"Ohmic contact","level":3,"score":0.7735085487365723},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.7048002481460571},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.6481378078460693},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.6095178127288818},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5667279958724976},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.5586926341056824},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.556138277053833},{"id":"https://openalex.org/C123671423","wikidata":"https://www.wikidata.org/wiki/Q332329","display_name":"Contact resistance","level":3,"score":0.4974119961261749},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.45072296261787415},{"id":"https://openalex.org/C37977207","wikidata":"https://www.wikidata.org/wiki/Q175561","display_name":"Microelectromechanical systems","level":2,"score":0.4440976083278656},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.43409883975982666},{"id":"https://openalex.org/C25356406","wikidata":"https://www.wikidata.org/wiki/Q7226935","display_name":"Polysilicon depletion effect","level":5,"score":0.42926907539367676},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.374783992767334},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.36180463433265686},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3343852162361145},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2733769416809082},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2591822147369385},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.21947339177131653},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.12530091404914856},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.10536497831344604},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.0753437876701355},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0675777792930603},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon52560.2021.9620511","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon52560.2021.9620511","pdf_url":null,"source":{"id":"https://openalex.org/S4363607945","display_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320315706","display_name":"Rocket","ror":null},{"id":"https://openalex.org/F4320323230","display_name":"Xidian University","ror":"https://ror.org/05s92vm98"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2013318463","https://openalex.org/W2022245002","https://openalex.org/W2043574994","https://openalex.org/W2146992328","https://openalex.org/W2548283008","https://openalex.org/W4248834748"],"related_works":["https://openalex.org/W1975027344","https://openalex.org/W2017076333","https://openalex.org/W2051353231","https://openalex.org/W2095133813","https://openalex.org/W1977156920","https://openalex.org/W3015744687","https://openalex.org/W1965890915","https://openalex.org/W2743725414","https://openalex.org/W3163578924","https://openalex.org/W2017500352"],"abstract_inverted_index":{"Because":[0],"of":[1,34],"low":[2],"temperature":[3,88],"and":[4,21,24,28,47,64,79,87],"CMOS":[5,20],"compatible":[6],"process":[7],"properties,":[8],"CVD":[9,41],"based":[10,42,51],"amorphous":[11],"silicon":[12],"(\u03b1-Si)":[13],"has":[14],"found":[15],"extensive":[16],"application":[17],"in":[18,31],"advanced":[19],"MEMS":[22],"process,":[23],"is":[25],"attracting":[26],"more":[27,29],"interests":[30],"research":[32],"work":[33],"nano":[35],"electronic":[36],"devices.":[37],"In":[38],"this":[39],"work,":[40],"\u03b1-Si":[43,50],"film":[44],"was":[45,54,77,81,90],"developed":[46],"characterized.":[48,68],"And":[49],"resistor":[52],"device":[53],"then":[55],"fabricated":[56],"using":[57],"Ti\\TiN":[58],"as":[59],"the":[60,71],"electrode":[61],"layer.":[62],"IV":[63],"TCR":[65],"properties":[66],"were":[67],"Based":[69],"on":[70],"measurement":[72],"data,":[73],"good":[74],"ohmic":[75],"contact":[76],"achieved,":[78],"there":[80],"clearly":[82],"exponential":[83],"relationship":[84],"between":[85],"resistance":[86],"which":[89],"consistent":[91],"with":[92],"Arrhenius":[93],"law.":[94]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}