{"id":"https://openalex.org/W4200157960","doi":"https://doi.org/10.1109/asicon52560.2021.9620437","title":"Stability Analysis of Monolithic GaN MIS-HEMT Comparator with Device PBTI and Circuit Stress Tests","display_name":"Stability Analysis of Monolithic GaN MIS-HEMT Comparator with Device PBTI and Circuit Stress Tests","publication_year":2021,"publication_date":"2021-10-26","ids":{"openalex":"https://openalex.org/W4200157960","doi":"https://doi.org/10.1109/asicon52560.2021.9620437"},"language":"en","primary_location":{"id":"doi:10.1109/asicon52560.2021.9620437","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon52560.2021.9620437","pdf_url":null,"source":{"id":"https://openalex.org/S4363607945","display_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5022512191","display_name":"Ang Li","orcid":"https://orcid.org/0000-0001-9679-0534"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ang Li","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Xi\u2019an Jiaotong-Liverpool University, Suzhou, China","Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi\u2019an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025090307","display_name":"Yi Shen","orcid":"https://orcid.org/0000-0001-6104-8487"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yi Shen","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Xi\u2019an Jiaotong-Liverpool University, Suzhou, China","Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi\u2019an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102008735","display_name":"Ziqian Li","orcid":"https://orcid.org/0000-0001-6979-3801"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ziqian Li","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Xi\u2019an Jiaotong-Liverpool University, Suzhou, China","Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi\u2019an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026903054","display_name":"Yuhao Zhu","orcid":"https://orcid.org/0000-0003-2764-3877"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuhao Zhu","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Xi\u2019an Jiaotong-Liverpool University, Suzhou, China","Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi\u2019an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037042853","display_name":"Huiqing Wen","orcid":"https://orcid.org/0000-0002-0169-488X"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Huiqing Wen","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Xi\u2019an Jiaotong-Liverpool University, Suzhou, China","Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi\u2019an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100320264","display_name":"Wen Liu","orcid":"https://orcid.org/0000-0002-2212-1861"},"institutions":[{"id":"https://openalex.org/I69356397","display_name":"Xi\u2019an Jiaotong-Liverpool University","ror":"https://ror.org/03zmrmn05","country_code":"CN","type":"education","lineage":["https://openalex.org/I69356397"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wen Liu","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Xi\u2019an Jiaotong-Liverpool University, Suzhou, China","Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi\u2019an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]},{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China","institution_ids":["https://openalex.org/I69356397"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I69356397"],"apc_list":null,"apc_paid":null,"fwci":0.4444,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.55782313,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/comparator","display_name":"Comparator","score":0.8767014741897583},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.8067195415496826},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.5377782583236694},{"id":"https://openalex.org/keywords/stability","display_name":"Stability (learning theory)","score":0.4975605309009552},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.46144264936447144},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.45298299193382263},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4212837219238281},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.39976564049720764},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.37277185916900635},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3600962460041046},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.34041324257850647},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.340249240398407},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24853116273880005},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.22029539942741394}],"concepts":[{"id":"https://openalex.org/C155745195","wikidata":"https://www.wikidata.org/wiki/Q1164179","display_name":"Comparator","level":3,"score":0.8767014741897583},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8067195415496826},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.5377782583236694},{"id":"https://openalex.org/C112972136","wikidata":"https://www.wikidata.org/wiki/Q7595718","display_name":"Stability (learning theory)","level":2,"score":0.4975605309009552},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.46144264936447144},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.45298299193382263},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4212837219238281},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.39976564049720764},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.37277185916900635},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3600962460041046},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.34041324257850647},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.340249240398407},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24853116273880005},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.22029539942741394},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon52560.2021.9620437","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon52560.2021.9620437","pdf_url":null,"source":{"id":"https://openalex.org/S4363607945","display_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1482969249","https://openalex.org/W1975719088","https://openalex.org/W1981421833","https://openalex.org/W1982735546","https://openalex.org/W2005438934","https://openalex.org/W2072245924","https://openalex.org/W2314198577","https://openalex.org/W2593495332","https://openalex.org/W2604581674","https://openalex.org/W4376491243","https://openalex.org/W4391305802"],"related_works":["https://openalex.org/W2034349229","https://openalex.org/W1972415042","https://openalex.org/W4366783034","https://openalex.org/W2005410346","https://openalex.org/W3004219868","https://openalex.org/W4313221225","https://openalex.org/W2150642609","https://openalex.org/W4306816370","https://openalex.org/W2189390720","https://openalex.org/W2042511722"],"abstract_inverted_index":{"In":[0],"this":[1,58],"paper,":[2],"based":[3],"on":[4],"GaN":[5,115],"MIS-HEMT":[6],"bias":[7,51],"temperature":[8,52],"instability":[9,53],"(BTI)":[10],"tests,":[11],"we":[12],"demonstrate":[13],"the":[14,18,22,29,35,39,45,62,108,111,120],"circuit-level":[15,121],"stability":[16,122],"of":[17,28,38,75,110],"comparator":[19,30,89],"circuit":[20,26,40,46,90,117],"with":[21],"stress":[23,91,112],"tests.":[24],"The":[25,49,88],"topology":[27],"is":[31,55,93],"analyzed":[32],"to":[33,57,118],"identify":[34],"critical":[36,59],"device":[37,60],"whose":[41],"threshold":[42,67],"voltage":[43,68],"affects":[44],"performance":[47],"significantly.":[48],"positive":[50],"(PBTI)":[54],"applied":[56],"in":[61,114],"comparator,":[63],"showing":[64],"a":[65,103],"maximum":[66],"shift":[69],"(\u0394V":[70],"<inf":[71],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[72,85,98],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">th</inf>":[73],")":[74],"0.311":[76],"V":[77],"at":[78],"200":[79],"\u00b0C":[80],"for":[81,95],"4.6":[82],"\u00d710":[83],"<sup":[84,97],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">4</sup>":[86,99],"s.":[87],"test":[92,113],"lasted":[94],"10":[96],"s":[100],"and":[101],"shows":[102],"stable":[104],"performance.":[105],"It":[106],"reveals":[107],"potential":[109],"integrated":[116],"realize":[119],"analysis.":[123]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-10-10T00:00:00"}