{"id":"https://openalex.org/W4200326571","doi":"https://doi.org/10.1109/asicon52560.2021.9620242","title":"Impact of Hydrogen Anneal on Peripheral PMOS NBTI and Array Transistor GIDL in DRAM","display_name":"Impact of Hydrogen Anneal on Peripheral PMOS NBTI and Array Transistor GIDL in DRAM","publication_year":2021,"publication_date":"2021-10-26","ids":{"openalex":"https://openalex.org/W4200326571","doi":"https://doi.org/10.1109/asicon52560.2021.9620242"},"language":"en","primary_location":{"id":"doi:10.1109/asicon52560.2021.9620242","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon52560.2021.9620242","pdf_url":null,"source":{"id":"https://openalex.org/S4363607945","display_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5080005081","display_name":"Xiong Li","orcid":"https://orcid.org/0000-0002-1471-5731"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Xiong Li","raw_affiliation_strings":["ChangXin Memory Technologies, Inc., Hefei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ChangXin Memory Technologies, Inc., Hefei, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027646782","display_name":"Huangxia Zhu","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Huangxia Zhu","raw_affiliation_strings":["ChangXin Memory Technologies, Inc., Hefei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ChangXin Memory Technologies, Inc., Hefei, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101494960","display_name":"Xiaolin Guo","orcid":"https://orcid.org/0000-0001-8197-690X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Xiaolin Guo","raw_affiliation_strings":["ChangXin Memory Technologies, Inc., Hefei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ChangXin Memory Technologies, Inc., Hefei, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007708099","display_name":"Kejun Mu","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kejun Mu","raw_affiliation_strings":["ChangXin Memory Technologies, Inc., Hefei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ChangXin Memory Technologies, Inc., Hefei, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"Peng Feng","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Peng Feng","raw_affiliation_strings":["ChangXin Memory Technologies, Inc., Hefei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ChangXin Memory Technologies, Inc., Hefei, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100685884","display_name":"Qian Xu","orcid":"https://orcid.org/0000-0001-9350-8273"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Qi-an Xu","raw_affiliation_strings":["ChangXin Memory Technologies, Inc., Hefei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ChangXin Memory Technologies, Inc., Hefei, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108449418","display_name":"Blacksmith Wu","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Blacksmith Wu","raw_affiliation_strings":["ChangXin Memory Technologies, Inc., Hefei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ChangXin Memory Technologies, Inc., Hefei, China","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5053073618","display_name":"Kanyu Cao","orcid":"https://orcid.org/0000-0002-1931-6836"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kanyu Cao","raw_affiliation_strings":["ChangXin Memory Technologies, Inc., Hefei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ChangXin Memory Technologies, Inc., Hefei, China","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":8,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.867,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.6508908,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"36","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.9816809892654419},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.8242079615592957},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7629331350326538},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7067325115203857},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.5571813583374023},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5493547320365906},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.4162783920764923},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36728179454803467},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.36477935314178467},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.199537456035614},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13062119483947754}],"concepts":[{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.9816809892654419},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.8242079615592957},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7629331350326538},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7067325115203857},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.5571813583374023},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5493547320365906},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.4162783920764923},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36728179454803467},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.36477935314178467},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.199537456035614},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13062119483947754},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon52560.2021.9620242","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon52560.2021.9620242","pdf_url":null,"source":{"id":"https://openalex.org/S4363607945","display_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2102575487","https://openalex.org/W2293561955","https://openalex.org/W4210615642"],"related_works":["https://openalex.org/W1999919743","https://openalex.org/W2081382200","https://openalex.org/W2100282217","https://openalex.org/W2157278395","https://openalex.org/W2164047446","https://openalex.org/W2621684361","https://openalex.org/W3033168326","https://openalex.org/W2609002938","https://openalex.org/W2126351224","https://openalex.org/W1556819175"],"abstract_inverted_index":{"The":[0],"trade-off":[1],"correlation":[2],"between":[3],"peripheral":[4],"PMOS":[5,27,46],"NBTI":[6,28,47,65],"and":[7,30,62],"Array":[8,33,51],"transistors":[9,34,52],"GIDL":[10,35],"current":[11],"received":[12],"little":[13],"attention,":[14],"previously.":[15],"We":[16],"show":[17],"experimental":[18],"evidence":[19],"that":[20],"Hydrogen":[21],"anneal":[22],"will":[23],"speed":[24],"up":[25],"the":[26,32,38,45,57,64],"degradation,":[29],"reduce":[31],"current,":[36],"at":[37],"same":[39],"time.":[40],"In":[41],"order":[42],"to":[43],"improve":[44],"immunity":[48],"without":[49],"damaging":[50],"electrical":[53],"characters,":[54],"we":[55],"propose":[56],"increasing":[58],"PG":[59],"Fluorine":[60],"implant,":[61],"discuss":[63],"improvement":[66],"mechanism.":[67]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}