{"id":"https://openalex.org/W4200479142","doi":"https://doi.org/10.1109/asicon52560.2021.9620236","title":"A process optimization method for carrier stored trench bipolar transistor (CSTBT) device","display_name":"A process optimization method for carrier stored trench bipolar transistor (CSTBT) device","publication_year":2021,"publication_date":"2021-10-26","ids":{"openalex":"https://openalex.org/W4200479142","doi":"https://doi.org/10.1109/asicon52560.2021.9620236"},"language":"en","primary_location":{"id":"doi:10.1109/asicon52560.2021.9620236","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon52560.2021.9620236","pdf_url":null,"source":{"id":"https://openalex.org/S4363607945","display_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5079990075","display_name":"Hang Xu","orcid":"https://orcid.org/0000-0002-6784-5863"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Hang Xu","raw_affiliation_strings":["School of Microelectronics, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012545182","display_name":"Donghui Zhao","orcid":"https://orcid.org/0000-0002-0550-5185"},"institutions":[{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]},{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dong-Hui Zhao","raw_affiliation_strings":["School of Microelectronics, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006570442","display_name":"Hao Zhu","orcid":"https://orcid.org/0000-0003-3890-6871"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hao Zhu","raw_affiliation_strings":["School of Microelectronics, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100427505","display_name":"Qingqing Sun","orcid":"https://orcid.org/0000-0002-6533-1834"},"institutions":[{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]},{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qing-Qing Sun","raw_affiliation_strings":["School of Microelectronics, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5009770961","display_name":"David Wei Zhang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]},{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"David Wei Zhang","raw_affiliation_strings":["School of Microelectronics, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5079990075"],"corresponding_institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4210132426"],"apc_list":null,"apc_paid":null,"fwci":0.8655,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.65547188,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/trench","display_name":"Trench","score":0.49005377292633057},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4169531464576721},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.39772915840148926},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.39627712965011597},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3512754440307617},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3467985689640045},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2550978660583496},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.23231303691864014},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.169429749250412}],"concepts":[{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.49005377292633057},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4169531464576721},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.39772915840148926},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.39627712965011597},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3512754440307617},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3467985689640045},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2550978660583496},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.23231303691864014},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.169429749250412}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon52560.2021.9620236","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon52560.2021.9620236","pdf_url":null,"source":{"id":"https://openalex.org/S4363607945","display_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE 14th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5699999928474426,"display_name":"Life below water","id":"https://metadata.un.org/sdg/14"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2899084033","https://openalex.org/W2019611465","https://openalex.org/W3157611879","https://openalex.org/W1966273737","https://openalex.org/W3164615570","https://openalex.org/W2313980841","https://openalex.org/W2999649267","https://openalex.org/W1987893528","https://openalex.org/W2086753183"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3],"process":[4,88,121,132,176],"optimization":[5,177],"method":[6,178],"for":[7,155,183],"the":[8,23,31,35,43,73,84,98,101,105,108,117,131,134,139],"carrier":[9,27],"stored":[10,28],"trench":[11,136,149],"bipolar":[12],"transistor":[13],"(CSTBT)":[14],"device":[15,140],"demonstrated":[16],"by":[17,91,124],"TCAD":[18,68],"numerical":[19],"simulations.":[20],"By":[21],"adjusting":[22],"injection":[24,32],"sequence":[25],"of":[26,34,45,83,116,138],"(CS)":[29],"layer,":[30],"efficiency":[33],"CS":[36],"layer":[37],"has":[38,63],"been":[39,64],"significantly":[40],"improved,":[41],"and":[42,54,78,93,113,126,168],"trade-off":[44,158],"on-state":[46],"voltage":[47],"drop":[48],"(V":[49],"<inf":[50,59,75,80,110,164,170],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[51,60,76,81,111,165,171],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">on</inf>":[52,82,172],")":[53,62,167],"collector":[55],"saturation":[56],"current":[57],"(IC":[58],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">sat</inf>":[61,77,112],"almost":[65],"fully":[66],"optimized.":[67],"simulation":[69],"results":[70],"show":[71],"that":[72],"IC":[74,109],"V":[79,169],"CSTBT":[85,99,118],"with":[86,100,119],"optimized":[87,120],"are":[89,122],"reduced":[90,123],"19.7%":[92],"15.1%,":[94],"respectively.":[95,128],"Additionally,":[96],"comparing":[97],"same":[102],"Von":[103],"under":[104],"two":[106],"processes,":[107],"turn-off":[114,161],"time":[115],"76.1%":[125],"7.8%,":[127],"Besides,":[129],"after":[130],"optimization,":[133],"gate":[135,148],"depth":[137],"can":[141,150],"be":[142],"further":[143],"reduced.":[144],"Result":[145],"shows":[146],"shallower":[147],"offer":[151],"larger":[152],"design":[153],"freedom":[154],"obtaining":[156],"excellent":[157],"relationship":[159],"between":[160],"loss":[162],"(E":[163],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">off</inf>":[166],".":[173],"Therefore,":[174],"this":[175],"is":[179],"an":[180],"attractive":[181],"solution":[182],"power":[184],"electronics":[185],"applications.":[186]},"counts_by_year":[{"year":2024,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}