{"id":"https://openalex.org/W3005011807","doi":"https://doi.org/10.1109/asicon47005.2019.8983680","title":"High performance optoelectronics based on CVD Mos2","display_name":"High performance optoelectronics based on CVD Mos2","publication_year":2019,"publication_date":"2019-10-01","ids":{"openalex":"https://openalex.org/W3005011807","doi":"https://doi.org/10.1109/asicon47005.2019.8983680","mag":"3005011807"},"language":"en","primary_location":{"id":"doi:10.1109/asicon47005.2019.8983680","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon47005.2019.8983680","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 13th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086010002","display_name":"Qianlan Hu","orcid":"https://orcid.org/0000-0002-5498-4135"},"institutions":[{"id":"https://openalex.org/I4210138186","display_name":"Wuhan National Laboratory for Optoelectronics","ror":"https://ror.org/03c9ncn37","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210138186"]},{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Qianlan Hu","raw_affiliation_strings":["Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science &#x0026; Technology,Wuhan,China,430074","Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan, China"],"affiliations":[{"raw_affiliation_string":"Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science &#x0026; Technology,Wuhan,China,430074","institution_ids":["https://openalex.org/I4210138186"]},{"raw_affiliation_string":"Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan, China","institution_ids":["https://openalex.org/I4210138186","https://openalex.org/I47720641"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100731773","display_name":"Zhenfeng Zhang","orcid":"https://orcid.org/0000-0002-0013-3685"},"institutions":[{"id":"https://openalex.org/I4210138186","display_name":"Wuhan National Laboratory for Optoelectronics","ror":"https://ror.org/03c9ncn37","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210138186"]},{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhenfeng Zhang","raw_affiliation_strings":["Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science &#x0026; Technology,Wuhan,China,430074","Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan, China"],"affiliations":[{"raw_affiliation_string":"Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science &#x0026; Technology,Wuhan,China,430074","institution_ids":["https://openalex.org/I4210138186"]},{"raw_affiliation_string":"Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan, China","institution_ids":["https://openalex.org/I4210138186","https://openalex.org/I47720641"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5054018432","display_name":"Yanqing Wu","orcid":"https://orcid.org/0000-0003-2578-5214"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]},{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN","SG"],"is_corresponding":false,"raw_author_name":"Yanqing Wu","raw_affiliation_strings":["Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MoE), Peking University,Beijing,China,100871","Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MoE), Peking University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MoE), Peking University,Beijing,China,100871","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I4210090209","https://openalex.org/I4210089056"]},{"raw_affiliation_string":"Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MoE), Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5086010002"],"corresponding_institution_ids":["https://openalex.org/I4210138186","https://openalex.org/I47720641"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.13241563,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/chemical-vapor-deposition","display_name":"Chemical vapor deposition","score":0.6308237314224243},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.5668532252311707},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5287237763404846},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4864821135997772},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.46408817172050476},{"id":"https://openalex.org/keywords/monolayer","display_name":"Monolayer","score":0.45240432024002075},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3064188063144684}],"concepts":[{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.6308237314224243},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5668532252311707},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5287237763404846},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4864821135997772},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.46408817172050476},{"id":"https://openalex.org/C7070889","wikidata":"https://www.wikidata.org/wiki/Q902488","display_name":"Monolayer","level":2,"score":0.45240432024002075},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3064188063144684},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon47005.2019.8983680","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon47005.2019.8983680","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 13th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W2041311241","https://openalex.org/W2058122340","https://openalex.org/W2073321070","https://openalex.org/W2163433444","https://openalex.org/W2770171247","https://openalex.org/W2787057481","https://openalex.org/W2802542123","https://openalex.org/W2889998833","https://openalex.org/W2900006623","https://openalex.org/W2901725827","https://openalex.org/W2922356693","https://openalex.org/W2938766360"],"related_works":["https://openalex.org/W2072594297","https://openalex.org/W2050317300","https://openalex.org/W2037348326","https://openalex.org/W2376711334","https://openalex.org/W1974457739","https://openalex.org/W2051355712","https://openalex.org/W2801765079","https://openalex.org/W4388563631","https://openalex.org/W2149987955","https://openalex.org/W2056938397"],"abstract_inverted_index":{"Transition":[0],"metal":[1],"dichalcogenides":[2],"(TMDs)":[3],"are":[4],"regarded":[5],"as":[6,105,107],"promising":[7],"nano":[8],"materials":[9],"for":[10],"next":[11],"generation":[12],"electronics":[13],"and":[14,22,78],"optoelectronics":[15],"due":[16],"to":[17,111],"their":[18],"ultrathin":[19],"body":[20],"nature":[21],"excellent":[23],"transport":[24],"properties.":[25],"Here,":[26],"single":[27],"crystal":[28],"growth":[29],"of":[30,47,87,99],"monolayer":[31],"Mos2":[32,48],"has":[33,58],"been":[34,59,118],"realized":[35],"by":[36,61,84],"controllable":[37],"atmosphere":[38],"pressure":[39],"chemical":[40],"vapor":[41],"deposition":[42],"(APCVD)":[43],"method.":[44],"The":[45,66],"high-quality":[46],"grown":[49],"directly":[50],"on":[51],"SiO":[52],"<inf":[53],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[54,102,114],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[55],"/Si":[56],"substrate":[57],"demonstrated":[60],"various":[62],"material":[63],"characterization":[64],"methods.":[65],"fabricated":[67],"optoelectronic":[68],"device":[69],"shows":[70],"prominent":[71],"photoresponse":[72],"within":[73],"a":[74,79,95],"broadband":[75],"spectrum":[76],"range":[77,83],"wide":[80],"optical":[81],"power":[82],"taking":[85],"advantage":[86],"the":[88],"Schottky":[89],"contact":[90],"at":[91],"source/drain":[92],"electrodes.":[93],"As":[94],"result,":[96],"high":[97,108],"photoresponsivity":[98],"3\u00d710":[100],"<sup":[101,113],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">4</sup>":[103],"A/W":[104],"well":[106],"photodetectivity":[109],"up":[110],"7\u00d710":[112],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">12</sup>":[115],"Jones":[116],"have":[117],"achieved.":[119]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}