{"id":"https://openalex.org/W3005442535","doi":"https://doi.org/10.1109/asicon47005.2019.8983655","title":"Mos2 transistor gated by PMMA-based electrolyte for sub-1 V operation","display_name":"Mos2 transistor gated by PMMA-based electrolyte for sub-1 V operation","publication_year":2019,"publication_date":"2019-10-01","ids":{"openalex":"https://openalex.org/W3005442535","doi":"https://doi.org/10.1109/asicon47005.2019.8983655","mag":"3005442535"},"language":"en","primary_location":{"id":"doi:10.1109/asicon47005.2019.8983655","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon47005.2019.8983655","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 13th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023195494","display_name":"Hongwei Tang","orcid":"https://orcid.org/0000-0002-2053-788X"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]},{"id":"https://openalex.org/I4391767673","display_name":"State Key Laboratory of ASIC and System","ror":"https://ror.org/01mamgv83","country_code":null,"type":"facility","lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongwei Tang","raw_affiliation_strings":["State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University,Shanghai,China,200433","State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University,Shanghai,China,200433","institution_ids":["https://openalex.org/I4210132426"]},{"raw_affiliation_string":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4210132426","https://openalex.org/I4391767673"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109432430","display_name":"Fuyou Liao","orcid":null},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]},{"id":"https://openalex.org/I4391767673","display_name":"State Key Laboratory of ASIC and System","ror":"https://ror.org/01mamgv83","country_code":null,"type":"facility","lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fuyou Liao","raw_affiliation_strings":["State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University,Shanghai,China,200433","State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University,Shanghai,China,200433","institution_ids":["https://openalex.org/I4210132426"]},{"raw_affiliation_string":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4210132426","https://openalex.org/I4391767673"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055911138","display_name":"Xinzhi Zhang","orcid":"https://orcid.org/0000-0001-8032-749X"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]},{"id":"https://openalex.org/I4391767673","display_name":"State Key Laboratory of ASIC and System","ror":"https://ror.org/01mamgv83","country_code":null,"type":"facility","lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinzhi Zhang","raw_affiliation_strings":["State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University,Shanghai,China,200433","State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University,Shanghai,China,200433","institution_ids":["https://openalex.org/I4210132426"]},{"raw_affiliation_string":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4210132426","https://openalex.org/I4391767673"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065113978","display_name":"Jianan Deng","orcid":"https://orcid.org/0000-0001-7450-826X"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4391767673","display_name":"State Key Laboratory of ASIC and System","ror":"https://ror.org/01mamgv83","country_code":null,"type":"facility","lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jianan Deng","raw_affiliation_strings":["State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University,Shanghai,China,200433","State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University,Shanghai,China,200433","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]},{"raw_affiliation_string":"State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101972816","display_name":"Jing Wan","orcid":"https://orcid.org/0000-0002-6339-4006"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4391767673","display_name":"State Key Laboratory of ASIC and System","ror":"https://ror.org/01mamgv83","country_code":null,"type":"facility","lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jing Wan","raw_affiliation_strings":["State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University,Shanghai,China,200433","State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University,Shanghai,China,200433","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]},{"raw_affiliation_string":"State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5084509449","display_name":"Wenzhong Bao","orcid":"https://orcid.org/0000-0002-3871-467X"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]},{"id":"https://openalex.org/I4391767673","display_name":"State Key Laboratory of ASIC and System","ror":"https://ror.org/01mamgv83","country_code":null,"type":"facility","lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wenzhong Bao","raw_affiliation_strings":["State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University,Shanghai,China,200433","State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University,Shanghai,China,200433","institution_ids":["https://openalex.org/I4210132426"]},{"raw_affiliation_string":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4210132426","https://openalex.org/I4391767673"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7204610109329224},{"id":"https://openalex.org/keywords/electrolyte","display_name":"Electrolyte","score":0.6848891973495483},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6496919393539429},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.6214603781700134},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5846977829933167},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5644574761390686},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.4772320091724396},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.413472056388855},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3946547210216522},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.34113097190856934},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3019900918006897},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.14308524131774902},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.10162711143493652}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7204610109329224},{"id":"https://openalex.org/C68801617","wikidata":"https://www.wikidata.org/wiki/Q162908","display_name":"Electrolyte","level":3,"score":0.6848891973495483},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6496919393539429},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.6214603781700134},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5846977829933167},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5644574761390686},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.4772320091724396},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.413472056388855},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3946547210216522},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.34113097190856934},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3019900918006897},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14308524131774902},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.10162711143493652},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon47005.2019.8983655","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon47005.2019.8983655","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 13th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1993711106","https://openalex.org/W2001791509","https://openalex.org/W2009971214","https://openalex.org/W2021994802","https://openalex.org/W2048194645","https://openalex.org/W2086880071","https://openalex.org/W2115786064","https://openalex.org/W2134821156","https://openalex.org/W2164160345","https://openalex.org/W2176009997","https://openalex.org/W2270422392","https://openalex.org/W2333662107","https://openalex.org/W2606924758","https://openalex.org/W2777689115","https://openalex.org/W2886404507"],"related_works":["https://openalex.org/W2082914599","https://openalex.org/W2954622210","https://openalex.org/W2756570351","https://openalex.org/W3023574445","https://openalex.org/W1996562250","https://openalex.org/W2944828428","https://openalex.org/W2606427896","https://openalex.org/W2053177633","https://openalex.org/W4248540693","https://openalex.org/W2007805353"],"abstract_inverted_index":{"The":[0,44,82],"fabrication":[1],"of":[2,22,33,85,92,128],"high-performance":[3],"MoS":[4],"<sub":[5],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[6,106],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[7],"transistor":[8],"with":[9,132],"a":[10,99,109,116,129,133],"reliable":[11],"gate":[12,39],"dielectric":[13,26,40],"layer":[14,96],"remains":[15],"an":[16,93],"obstacle":[17],"due":[18],"to":[19,49],"the":[20,31,38,86,90,125,142],"lack":[21],"dangling":[23],"bonds":[24],"for":[25,41,144],"deposition.":[27],"Here,":[28],"we":[29,123],"demonstrate":[30],"employment":[32],"PMMA-based":[34,66],"electrolyte":[35,45,67],"film":[36,56],"as":[37],"Mos2":[42,70,130],"transistors.":[43],"can":[46],"be":[47],"utilized":[48],"form":[50],"high":[51],"quality":[52],"and":[53,77,108,150],"uniform":[54],"thin":[55],"by":[57],"spin-coating":[58],"method":[59],"at":[60],"room":[61],"temperature.":[62],"Based":[63],"on":[64],"this":[65],"film,":[68],"top-gated":[69],"field":[71],"effect":[72],"transistors":[73],"(FETs)":[74],"are":[75],"fabricated":[76],"exhibit":[78],"exceptional":[79],"device":[80],"performance.":[81],"ultra-high":[83],"capacitance":[84],"electrolyte,":[87],"resulting":[88],"from":[89],"formation":[91],"electric":[94],"double":[95],"(EDL),":[97],"yields":[98],"current":[100],"on/off":[101],"ratio":[102],"about":[103],"10":[104],"<sup":[105],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">5</sup>":[107],"steep":[110],"subthreshold":[111],"swing":[112],"(90":[113],"mV/dec)":[114],"within":[115],"low":[117,146],"supply":[118],"voltage":[119],"(1":[120],"V).":[121],"Furthermore,":[122],"investigate":[124],"dynamic":[126],"response":[127],"inverter":[131],"switching":[134],"speed":[135],"over":[136],"100":[137],"Hz.":[138],"This":[139],"result":[140],"provides":[141],"possibility":[143],"realizing":[145],"power":[147],"logic":[148],"circuit":[149],"nano-electronics.":[151]},"counts_by_year":[{"year":2021,"cited_by_count":1}],"updated_date":"2026-07-22T07:51:19.307946","created_date":"2025-10-10T00:00:00"}