{"id":"https://openalex.org/W3004473051","doi":"https://doi.org/10.1109/asicon47005.2019.8983621","title":"A design of a wideband balanced limited low noise amplifier","display_name":"A design of a wideband balanced limited low noise amplifier","publication_year":2019,"publication_date":"2019-10-01","ids":{"openalex":"https://openalex.org/W3004473051","doi":"https://doi.org/10.1109/asicon47005.2019.8983621","mag":"3004473051"},"language":"en","primary_location":{"id":"doi:10.1109/asicon47005.2019.8983621","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon47005.2019.8983621","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 13th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100351349","display_name":"Ming Li","orcid":"https://orcid.org/0000-0001-8959-9619"},"institutions":[{"id":"https://openalex.org/I2800372957","display_name":"China Electronics Technology Group Corporation","ror":"https://ror.org/0098hst83","country_code":"CN","type":"company","lineage":["https://openalex.org/I2800372957"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Li Ming","raw_affiliation_strings":["The 13th Research Institute of CHINA Electronics Technology Group Corporation,Shijiazhuang,CHINA,050051","The 13th Research Institute of CHINA Electronics Technology Group Corporation, Shijiazhuang, CHINA"],"affiliations":[{"raw_affiliation_string":"The 13th Research Institute of CHINA Electronics Technology Group Corporation,Shijiazhuang,CHINA,050051","institution_ids":["https://openalex.org/I2800372957"]},{"raw_affiliation_string":"The 13th Research Institute of CHINA Electronics Technology Group Corporation, Shijiazhuang, CHINA","institution_ids":["https://openalex.org/I2800372957"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100410706","display_name":"Zhi Zeng","orcid":"https://orcid.org/0000-0003-2150-2088"},"institutions":[{"id":"https://openalex.org/I2800372957","display_name":"China Electronics Technology Group Corporation","ror":"https://ror.org/0098hst83","country_code":"CN","type":"company","lineage":["https://openalex.org/I2800372957"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zeng Zhi","raw_affiliation_strings":["The 13th Research Institute of CHINA Electronics Technology Group Corporation,Shijiazhuang,CHINA,050051","The 13th Research Institute of CHINA Electronics Technology Group Corporation, Shijiazhuang, CHINA"],"affiliations":[{"raw_affiliation_string":"The 13th Research Institute of CHINA Electronics Technology Group Corporation,Shijiazhuang,CHINA,050051","institution_ids":["https://openalex.org/I2800372957"]},{"raw_affiliation_string":"The 13th Research Institute of CHINA Electronics Technology Group Corporation, Shijiazhuang, CHINA","institution_ids":["https://openalex.org/I2800372957"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5089866558","display_name":"Wei Hongtao","orcid":null},"institutions":[{"id":"https://openalex.org/I2800372957","display_name":"China Electronics Technology Group Corporation","ror":"https://ror.org/0098hst83","country_code":"CN","type":"company","lineage":["https://openalex.org/I2800372957"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wei Hongtao","raw_affiliation_strings":["The 13th Research Institute of CHINA Electronics Technology Group Corporation,Shijiazhuang,CHINA,050051","The 13th Research Institute of CHINA Electronics Technology Group Corporation, Shijiazhuang, CHINA"],"affiliations":[{"raw_affiliation_string":"The 13th Research Institute of CHINA Electronics Technology Group Corporation,Shijiazhuang,CHINA,050051","institution_ids":["https://openalex.org/I2800372957"]},{"raw_affiliation_string":"The 13th Research Institute of CHINA Electronics Technology Group Corporation, Shijiazhuang, CHINA","institution_ids":["https://openalex.org/I2800372957"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5100351349"],"corresponding_institution_ids":["https://openalex.org/I2800372957"],"apc_list":null,"apc_paid":null,"fwci":0.4526,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.67256782,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11175","display_name":"Gyrotron and Vacuum Electronics Research","score":0.887499988079071,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11175","display_name":"Gyrotron and Vacuum Electronics Research","score":0.887499988079071,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.8700000047683716,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.8324999809265137,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.604920506477356},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5884600877761841},{"id":"https://openalex.org/keywords/low-noise-amplifier","display_name":"Low-noise amplifier","score":0.5763983130455017},{"id":"https://openalex.org/keywords/wideband","display_name":"Wideband","score":0.5528928637504578},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5469496846199036},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.380863755941391},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.35485851764678955},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.33416154980659485},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3211439251899719},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.2046225666999817}],"concepts":[{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.604920506477356},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5884600877761841},{"id":"https://openalex.org/C155332784","wikidata":"https://www.wikidata.org/wiki/Q1151304","display_name":"Low-noise amplifier","level":4,"score":0.5763983130455017},{"id":"https://openalex.org/C2780202535","wikidata":"https://www.wikidata.org/wiki/Q4524457","display_name":"Wideband","level":2,"score":0.5528928637504578},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5469496846199036},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.380863755941391},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.35485851764678955},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.33416154980659485},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3211439251899719},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.2046225666999817}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon47005.2019.8983621","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon47005.2019.8983621","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 13th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8999999761581421}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W1859505881"],"related_works":["https://openalex.org/W2021011313","https://openalex.org/W2382937231","https://openalex.org/W3000916362","https://openalex.org/W2515952003","https://openalex.org/W2010358330","https://openalex.org/W2064881384","https://openalex.org/W4390187685","https://openalex.org/W2024400826","https://openalex.org/W2151988453","https://openalex.org/W2366126408"],"abstract_inverted_index":{"Based":[0],"on":[1],"the":[2,31,56,61,68,73,87,93,107,123,130],"GaAs":[3],"PIN":[4],"(positive":[5],"intrinsic":[6],"negative)":[7],"diode":[8],"and":[9,39,50,86,95,106],"HEMT":[10],"(high":[11],"electron":[12],"mobility":[13],"transistor)":[14],"technology,":[15],"a":[16,46],"5~20GHz":[17],"wideband":[18],"balanced":[19],"limited":[20],"LNA":[21,124],"(low":[22],"noise":[23,79],"amplifier)":[24],"chip":[25,29,44,57,74],"was":[26],"presented.":[27],"The":[28,43,52,117],"has":[30],"characteristics":[32],"of":[33,55,64,72],"wideband,":[34],"low":[35],"noise,":[36],"high":[37,40],"gain":[38,71],"power":[41,109,131],"capacitance.":[42],"includes":[45],"3dB":[47],"coupler,":[48],"limiter":[49],"LNA.":[51],"test":[53],"results":[54],"show":[58],"that":[59],"in":[60],"frequency":[62],"range":[63],"6GHz":[65],"to":[66],"20GHz,":[67],"small":[69],"signal":[70],"is":[75,81,90,110,120,125,133],"higher":[76],"than":[77,83,104,112],"26dB,":[78],"figure":[80],"less":[82],"2.8":[84],"dB,":[85],"typical":[88],"value":[89],"2dB,":[91],"both":[92],"input":[94,136],"output":[96,108],"VSWR":[97],"(voltage":[98],"standing":[99],"wave":[100],"ratio)":[101],"are":[102],"better":[103],"1.3:1,":[105],"more":[111],"6dBm":[113],"at":[114],"1dB":[115],"compression.":[116],"static":[118],"current":[119],"30mA":[121],"when":[122],"supplied":[126],"with":[127],"5V.":[128],"And":[129],"capability":[132],"15W":[134],"(13GHz,":[135],"pulse":[137,139],"power:":[138],"width":[140],"400us,":[141],"duty":[142],"cycle":[143],"30%).":[144]},"counts_by_year":[{"year":2022,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}