{"id":"https://openalex.org/W3005246792","doi":"https://doi.org/10.1109/asicon47005.2019.8983542","title":"GaN Schottky Diode Model for THz Multiplier Design with Consideration of Self-heating Effect","display_name":"GaN Schottky Diode Model for THz Multiplier Design with Consideration of Self-heating Effect","publication_year":2019,"publication_date":"2019-10-01","ids":{"openalex":"https://openalex.org/W3005246792","doi":"https://doi.org/10.1109/asicon47005.2019.8983542","mag":"3005246792"},"language":"en","primary_location":{"id":"doi:10.1109/asicon47005.2019.8983542","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon47005.2019.8983542","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 13th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5031651070","display_name":"Xubo Song","orcid":"https://orcid.org/0000-0002-5991-7169"},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xubo Song","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","institution_ids":["https://openalex.org/I4210160974"]},{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014691101","display_name":"Yuanjie Lv","orcid":null},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuanjie Lv","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","institution_ids":["https://openalex.org/I4210160974"]},{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100724532","display_name":"Yamin Zhang","orcid":"https://orcid.org/0000-0001-5001-4329"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]},{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yamin Zhang","raw_affiliation_strings":["Laboratory of Semiconductor Device Reliability Physics, Beijing University of Technology,Beijing,China","National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China"],"affiliations":[{"raw_affiliation_string":"Laboratory of Semiconductor Device Reliability Physics, Beijing University of Technology,Beijing,China","institution_ids":["https://openalex.org/I37796252"]},{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020906207","display_name":"Lisen Zhang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lisen Zhang","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","institution_ids":["https://openalex.org/I4210160974"]},{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020675415","display_name":"Shixiong Liang","orcid":"https://orcid.org/0000-0003-4336-3373"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]},{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shixiong Liang","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","Laboratory of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","institution_ids":["https://openalex.org/I4210160974"]},{"raw_affiliation_string":"Laboratory of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018783368","display_name":"Xin Tan","orcid":"https://orcid.org/0000-0003-2609-3172"},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xin Tan","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","institution_ids":["https://openalex.org/I4210160974"]},{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111882469","display_name":"Shaobo Dun","orcid":null},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shaobo Dun","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","institution_ids":["https://openalex.org/I4210160974"]},{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004802990","display_name":"Dabao Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dabao Yang","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","institution_ids":["https://openalex.org/I4210160974"]},{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100602198","display_name":"Zhirong Zhang","orcid":"https://orcid.org/0000-0002-6943-6406"},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhirong Zhang","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","institution_ids":["https://openalex.org/I4210160974"]},{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075779549","display_name":"Yuangang Wang","orcid":"https://orcid.org/0000-0002-4240-7875"},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuangang Wang","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","institution_ids":["https://openalex.org/I4210160974"]},{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100653899","display_name":"Zhihong Feng","orcid":"https://orcid.org/0000-0001-7275-8388"},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhihong Feng","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China"],"affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude,Shijiazhuang,China","institution_ids":["https://openalex.org/I4210160974"]},{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institude, Shijiazhuang, China","institution_ids":["https://openalex.org/I4210160974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":11,"corresponding_author_ids":["https://openalex.org/A5031651070"],"corresponding_institution_ids":["https://openalex.org/I4210160974"],"apc_list":null,"apc_paid":null,"fwci":0.1771,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.55652618,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11803","display_name":"Superconducting and THz Device Technology","score":0.9922999739646912,"subfield":{"id":"https://openalex.org/subfields/3103","display_name":"Astronomy and Astrophysics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.879339873790741},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7137578725814819},{"id":"https://openalex.org/keywords/terahertz-radiation","display_name":"Terahertz radiation","score":0.6989372372627258},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.6550636887550354},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6460889577865601},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5619978308677673},{"id":"https://openalex.org/keywords/junction-temperature","display_name":"Junction temperature","score":0.5394763350486755},{"id":"https://openalex.org/keywords/step-recovery-diode","display_name":"Step recovery diode","score":0.536528468132019},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.5015518665313721},{"id":"https://openalex.org/keywords/frequency-multiplier","display_name":"Frequency multiplier","score":0.4940665066242218},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.4744197726249695},{"id":"https://openalex.org/keywords/multiplier","display_name":"Multiplier (economics)","score":0.4541361927986145},{"id":"https://openalex.org/keywords/thermal-resistance","display_name":"Thermal resistance","score":0.4225923717021942},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.3963764011859894},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.26290854811668396},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.2510415315628052},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16209393739700317},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.13809508085250854}],"concepts":[{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.879339873790741},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7137578725814819},{"id":"https://openalex.org/C107816215","wikidata":"https://www.wikidata.org/wiki/Q647887","display_name":"Terahertz radiation","level":2,"score":0.6989372372627258},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6550636887550354},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6460889577865601},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5619978308677673},{"id":"https://openalex.org/C167781694","wikidata":"https://www.wikidata.org/wiki/Q6311800","display_name":"Junction temperature","level":3,"score":0.5394763350486755},{"id":"https://openalex.org/C188855776","wikidata":"https://www.wikidata.org/wiki/Q120271","display_name":"Step recovery diode","level":4,"score":0.536528468132019},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5015518665313721},{"id":"https://openalex.org/C146002875","wikidata":"https://www.wikidata.org/wiki/Q1074289","display_name":"Frequency multiplier","level":3,"score":0.4940665066242218},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.4744197726249695},{"id":"https://openalex.org/C124584101","wikidata":"https://www.wikidata.org/wiki/Q1053266","display_name":"Multiplier (economics)","level":2,"score":0.4541361927986145},{"id":"https://openalex.org/C137693562","wikidata":"https://www.wikidata.org/wiki/Q899628","display_name":"Thermal resistance","level":3,"score":0.4225923717021942},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.3963764011859894},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.26290854811668396},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.2510415315628052},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16209393739700317},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13809508085250854},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon47005.2019.8983542","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon47005.2019.8983542","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 13th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8999999761581421}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2142038828","https://openalex.org/W2460492540","https://openalex.org/W2598908486"],"related_works":["https://openalex.org/W2160519523","https://openalex.org/W2548839566","https://openalex.org/W2605847106","https://openalex.org/W2241736443","https://openalex.org/W3009220070","https://openalex.org/W2387329802","https://openalex.org/W3215942247","https://openalex.org/W2591735537","https://openalex.org/W1988915862","https://openalex.org/W4283754245"],"abstract_inverted_index":{"We":[0],"presented":[1,71],"a":[2,66],"GaN":[3],"Schottky":[4,51],"diode":[5,19,38],"model":[6,61],"with":[7,53],"consideration":[8],"of":[9,12,18,37,50,58,65],"self-heating":[10],"effect":[11],"devices":[13],"in":[14,31,62,72],"operation.":[15],"The":[16,34],"impact":[17],"chip":[20,39],"temperature":[21,49],"on":[22],"the":[23,48,63,73],"current":[24],"and":[25],"capacitance":[26],"was":[27,40],"taken":[28],"into":[29],"account":[30],"this":[32],"model.":[33],"thermal":[35],"resistance":[36],"extracted":[41],"by":[42],"simulation":[43],"combined":[44],"measurement":[45],"to":[46],"calculate":[47],"junction":[52],"different":[54],"pumping":[55],"power.":[56],"Advantages":[57],"established":[59],"device":[60],"design":[64],"220GHz":[67],"frequency":[68],"doubler":[69],"were":[70],"end.":[74]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2026-03-25T23:56:10.502304","created_date":"2025-10-10T00:00:00"}