{"id":"https://openalex.org/W2783095230","doi":"https://doi.org/10.1109/asicon.2017.8252624","title":"Metallic-carbon-nanotube-removal tolerant SRAM cell with 9 transistors","display_name":"Metallic-carbon-nanotube-removal tolerant SRAM cell with 9 transistors","publication_year":2017,"publication_date":"2017-10-01","ids":{"openalex":"https://openalex.org/W2783095230","doi":"https://doi.org/10.1109/asicon.2017.8252624","mag":"2783095230"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2017.8252624","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2017.8252624","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 12th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102022581","display_name":"Yanan Sun","orcid":"https://orcid.org/0000-0001-8281-9121"},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yanan Sun","raw_affiliation_strings":["Department of Micro-Nano Electronics, Shanghai Jiao Tong University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Micro-Nano Electronics, Shanghai Jiao Tong University","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101583945","display_name":"Weifeng He","orcid":"https://orcid.org/0000-0002-7753-644X"},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weifeng He","raw_affiliation_strings":["Department of Micro-Nano Electronics, Shanghai Jiao Tong University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Micro-Nano Electronics, Shanghai Jiao Tong University","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103236320","display_name":"Zhigang Mao","orcid":"https://orcid.org/0000-0001-9431-9853"},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhigang Mao","raw_affiliation_strings":["Department of Micro-Nano Electronics, Shanghai Jiao Tong University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Micro-Nano Electronics, Shanghai Jiao Tong University","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042636120","display_name":"Hailong Jiao","orcid":"https://orcid.org/0000-0002-2815-6168"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hailong Jiao","raw_affiliation_strings":["School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042147600","display_name":"Volkan Kursun","orcid":"https://orcid.org/0000-0002-8050-1774"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Volkan Kursun","raw_affiliation_strings":["Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology","institution_ids":["https://openalex.org/I200769079"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"908","last_page":"911"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8852921724319458},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.8770384192466736},{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistor","display_name":"Carbon nanotube field-effect transistor","score":0.6956734657287598},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6453886032104492},{"id":"https://openalex.org/keywords/yield","display_name":"Yield (engineering)","score":0.6345393061637878},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.607336163520813},{"id":"https://openalex.org/keywords/carbon-nanotube","display_name":"Carbon nanotube","score":0.6010487079620361},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5509586930274963},{"id":"https://openalex.org/keywords/carbon-fibers","display_name":"Carbon fibers","score":0.45931485295295715},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4208610951900482},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3503855764865875},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3310597836971283},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.31685811281204224},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2907005846500397},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1172381043434143},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10268601775169373},{"id":"https://openalex.org/keywords/composite-number","display_name":"Composite number","score":0.07382902503013611},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.05986309051513672}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8852921724319458},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.8770384192466736},{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.6956734657287598},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6453886032104492},{"id":"https://openalex.org/C134121241","wikidata":"https://www.wikidata.org/wiki/Q899301","display_name":"Yield (engineering)","level":2,"score":0.6345393061637878},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.607336163520813},{"id":"https://openalex.org/C513720949","wikidata":"https://www.wikidata.org/wiki/Q1778729","display_name":"Carbon nanotube","level":2,"score":0.6010487079620361},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5509586930274963},{"id":"https://openalex.org/C140205800","wikidata":"https://www.wikidata.org/wiki/Q5860","display_name":"Carbon fibers","level":3,"score":0.45931485295295715},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4208610951900482},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3503855764865875},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3310597836971283},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.31685811281204224},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2907005846500397},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1172381043434143},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10268601775169373},{"id":"https://openalex.org/C104779481","wikidata":"https://www.wikidata.org/wiki/Q50707","display_name":"Composite number","level":2,"score":0.07382902503013611},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.05986309051513672}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/asicon.2017.8252624","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2017.8252624","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 12th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},{"id":"pmh:oai:repository.hkust.edu.hk:1783.1-89847","is_oa":false,"landing_page_url":"http://repository.hkust.edu.hk/ir/Record/1783.1-89847","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":null,"raw_type":"Conference paper"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W274004780","https://openalex.org/W1999560041","https://openalex.org/W2002878591","https://openalex.org/W2045933611","https://openalex.org/W2103873102","https://openalex.org/W2124166222","https://openalex.org/W2291951321","https://openalex.org/W2496254462","https://openalex.org/W2517866076","https://openalex.org/W3144591591","https://openalex.org/W4244758500"],"related_works":["https://openalex.org/W2997919932","https://openalex.org/W4224860143","https://openalex.org/W2010483191","https://openalex.org/W2562173707","https://openalex.org/W2297319780","https://openalex.org/W4247832579","https://openalex.org/W4240835171","https://openalex.org/W2520795347","https://openalex.org/W3156670728","https://openalex.org/W2892303075"],"abstract_inverted_index":{"A":[0,24],"high-yield":[1],"nine":[2],"carbon":[3,16,29],"nanotube":[4,30],"MOSFET":[5],"(9-CN-MOSFET)":[6],"SRAM":[7,53,84],"cell":[8],"that":[9,67],"can":[10],"tolerate":[11],"the":[12,38,44,50,62,81,96],"removal":[13],"of":[14,28,41,49,80],"metallic":[15],"nanotubes":[17],"(m-CNs)":[18],"is":[19,35,55],"proposed":[20,82],"in":[21,43,101],"this":[22],"paper.":[23],"functional":[25],"yield":[26,48],"model":[27],"transistors":[31],"and":[32,76,90],"memory":[33,65,99],"circuits":[34],"developed":[36],"considering":[37],"spatial":[39],"correlations":[40],"CNs":[42],"channel":[45],"arrays.":[46],"The":[47,73],"m-CN-removal-tolerant":[51],"9-CN-MOSFET":[52,83],"array":[54],"increased":[56],"by":[57,88],"21309x":[58],"as":[59,93],"compared":[60,94],"to":[61,95],"previously":[63,97],"published":[64,98],"circuit":[66,85,100],"does":[68],"not":[69],"consider":[70],"process":[71],"imperfections.":[72],"read":[74],"delay":[75,79],"worst-case":[77],"write":[78],"are":[86],"reduced":[87],"29.05%":[89],"22.30%,":[91],"respectively,":[92],"a":[102],"16nm":[103],"CN-MOSFET":[104],"technology.":[105]},"counts_by_year":[],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}