{"id":"https://openalex.org/W2782754635","doi":"https://doi.org/10.1109/asicon.2017.8252515","title":"Ultralow power loss integratable high-voltage MOSFETs","display_name":"Ultralow power loss integratable high-voltage MOSFETs","publication_year":2017,"publication_date":"2017-10-01","ids":{"openalex":"https://openalex.org/W2782754635","doi":"https://doi.org/10.1109/asicon.2017.8252515","mag":"2782754635"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2017.8252515","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2017.8252515","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 12th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5006904369","display_name":"Xiaorong Luo","orcid":"https://orcid.org/0000-0001-5973-3258"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xiaorong Luo","raw_affiliation_strings":["University of Electronic Science and Technology of China, Chengdu, China"],"affiliations":[{"raw_affiliation_string":"University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032253393","display_name":"Ge Weiwei","orcid":null},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weiwei Ge","raw_affiliation_strings":["University of Electronic Science and Technology of China, Chengdu, China"],"affiliations":[{"raw_affiliation_string":"University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100320398","display_name":"Bo Zhang","orcid":"https://orcid.org/0000-0003-1288-1549"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bo Zhang","raw_affiliation_strings":["University of Electronic Science and Technology of China, Chengdu, China"],"affiliations":[{"raw_affiliation_string":"University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5006904369"],"corresponding_institution_ids":["https://openalex.org/I150229711"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.18379287,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"12","issue":null,"first_page":"468","last_page":"471"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5719361305236816},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.5690920352935791},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.5215908885002136},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5132102966308594},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4783470332622528},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.43427032232284546},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3391950726509094},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.338802695274353},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.26308250427246094},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.25632935762405396},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.0868014395236969}],"concepts":[{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5719361305236816},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.5690920352935791},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5215908885002136},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5132102966308594},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4783470332622528},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.43427032232284546},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3391950726509094},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.338802695274353},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.26308250427246094},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.25632935762405396},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0868014395236969}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2017.8252515","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2017.8252515","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 12th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1560529691","https://openalex.org/W1744512730","https://openalex.org/W2013898046","https://openalex.org/W2162029399","https://openalex.org/W2309032895","https://openalex.org/W2492372312"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W1999480211","https://openalex.org/W3013205429","https://openalex.org/W1599308342","https://openalex.org/W4245642471","https://openalex.org/W1986910690","https://openalex.org/W2152155896","https://openalex.org/W2038414189","https://openalex.org/W2914976892","https://openalex.org/W2066729755"],"abstract_inverted_index":{"Optimizing":[0],"the":[1,5,15,28,32,42,45,68,73,82,85],"trade-off":[2],"relationship":[3],"between":[4],"Breakdown":[6],"Voltage":[7],"(BV)":[8],"and":[9,40,67,81],"specific":[10],"on-resistance":[11],"(Ron,":[12],"sp)":[13],"is":[14],"main":[16],"concern":[17],"for":[18],"power":[19],"MOSFETs.":[20],"Setting":[21],"up":[22],"novel":[23],"current":[24],"transportation":[25],"mechanism,":[26],"increasing":[27],"doping":[29],"concentration":[30],"of":[31,44,78],"drift":[33,46],"region":[34,47],"(N":[35],"<sub":[36,49],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[37,50],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">d</sub>":[38,51],")":[39,52],"decreasing":[41],"length":[43],"(L":[48],"are":[53,88],"prevalent":[54],"methods":[55],"to":[56,71],"deal":[57],"with":[58],"this":[59,91],"problem.":[60],"This":[61],"paper":[62],"presents":[63],"some":[64],"typical":[65],"techniques":[66],"related":[69],"devices":[70,80],"demonstrate":[72],"three":[74],"methods.":[75],"The":[76],"mechanisms":[77],"these":[79],"improvement":[83],"in":[84,90],"electrical":[86],"performance":[87],"analyzed":[89],"paper.":[92]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}