{"id":"https://openalex.org/W2782895876","doi":"https://doi.org/10.1109/asicon.2017.8252483","title":"Graphite planar resistive switching memory and its application in pattern recognition","display_name":"Graphite planar resistive switching memory and its application in pattern recognition","publication_year":2017,"publication_date":"2017-10-01","ids":{"openalex":"https://openalex.org/W2782895876","doi":"https://doi.org/10.1109/asicon.2017.8252483","mag":"2782895876"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2017.8252483","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2017.8252483","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 12th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5065906479","display_name":"Lin-Jie Yu","orcid":null},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Lin-Jie Yu","raw_affiliation_strings":["State Key Laboratory of ASIC and System, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100417426","display_name":"Tianyu Wang","orcid":"https://orcid.org/0000-0002-6087-6376"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Tian-Yu Wang","raw_affiliation_strings":["State Key Laboratory of ASIC and System, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100443762","display_name":"Lin Chen","orcid":"https://orcid.org/0000-0002-7145-7564"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lin Chen","raw_affiliation_strings":["State Key Laboratory of ASIC and System, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006570442","display_name":"Hao Zhu","orcid":"https://orcid.org/0000-0003-3890-6871"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hao Zhu","raw_affiliation_strings":["State Key Laboratory of ASIC and System, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100427505","display_name":"Qingqing Sun","orcid":"https://orcid.org/0000-0002-6533-1834"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qing-Qing Sun","raw_affiliation_strings":["State Key Laboratory of ASIC and System, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056147381","display_name":"Shi\u2010Jin Ding","orcid":"https://orcid.org/0000-0002-5766-089X"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shi-Jin Ding","raw_affiliation_strings":["State Key Laboratory of ASIC and System, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050902155","display_name":"Peng Zhou","orcid":"https://orcid.org/0000-0002-7301-1013"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Peng Zhou","raw_affiliation_strings":["State Key Laboratory of ASIC and System, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111519882","display_name":"David Wei Zhang","orcid":null},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"David Wei Zhang","raw_affiliation_strings":["State Key Laboratory of ASIC and System, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5065906479"],"corresponding_institution_ids":["https://openalex.org/I24943067"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.1844102,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"6","issue":null,"first_page":"343","last_page":"346"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12236","display_name":"Photoreceptor and optogenetics research","score":0.993399977684021,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.991100013256073,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/neuromorphic-engineering","display_name":"Neuromorphic engineering","score":0.8410406708717346},{"id":"https://openalex.org/keywords/graphene","display_name":"Graphene","score":0.7411688566207886},{"id":"https://openalex.org/keywords/planar","display_name":"Planar","score":0.6875437498092651},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5912505984306335},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.5575237274169922},{"id":"https://openalex.org/keywords/lithography","display_name":"Lithography","score":0.5323429703712463},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.5285455584526062},{"id":"https://openalex.org/keywords/chemical-vapor-deposition","display_name":"Chemical vapor deposition","score":0.5016689300537109},{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.46911221742630005},{"id":"https://openalex.org/keywords/graphite","display_name":"Graphite","score":0.44699254631996155},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4248512089252472},{"id":"https://openalex.org/keywords/electron-beam-lithography","display_name":"Electron-beam lithography","score":0.4238969683647156},{"id":"https://openalex.org/keywords/computation","display_name":"Computation","score":0.4119635820388794},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.40970829129219055},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4017545282840729},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3712472915649414},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.3449733853340149},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.25470173358917236},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.24910011887550354},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.13585689663887024},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11414876580238342},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.10459262132644653},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10432407259941101},{"id":"https://openalex.org/keywords/computer-graphics","display_name":"Computer graphics (images)","score":0.09941750764846802}],"concepts":[{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.8410406708717346},{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.7411688566207886},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.6875437498092651},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5912505984306335},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.5575237274169922},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.5323429703712463},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5285455584526062},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.5016689300537109},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.46911221742630005},{"id":"https://openalex.org/C2779698641","wikidata":"https://www.wikidata.org/wiki/Q5309","display_name":"Graphite","level":2,"score":0.44699254631996155},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4248512089252472},{"id":"https://openalex.org/C200274948","wikidata":"https://www.wikidata.org/wiki/Q256845","display_name":"Electron-beam lithography","level":4,"score":0.4238969683647156},{"id":"https://openalex.org/C45374587","wikidata":"https://www.wikidata.org/wiki/Q12525525","display_name":"Computation","level":2,"score":0.4119635820388794},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.40970829129219055},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4017545282840729},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3712472915649414},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.3449733853340149},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.25470173358917236},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24910011887550354},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.13585689663887024},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11414876580238342},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.10459262132644653},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10432407259941101},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.09941750764846802},{"id":"https://openalex.org/C53524968","wikidata":"https://www.wikidata.org/wiki/Q7315582","display_name":"Resist","level":3,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C31972630","wikidata":"https://www.wikidata.org/wiki/Q844240","display_name":"Computer vision","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2017.8252483","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2017.8252483","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 12th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320327516","display_name":"Program of Shanghai Subject Chief Scientist","ror":null}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1515870071","https://openalex.org/W1542981317","https://openalex.org/W1846596397","https://openalex.org/W1859589136","https://openalex.org/W1937359183","https://openalex.org/W1957976164","https://openalex.org/W2038459401","https://openalex.org/W2062328341","https://openalex.org/W2170149787","https://openalex.org/W2316633731","https://openalex.org/W2559718113","https://openalex.org/W3103408907"],"related_works":["https://openalex.org/W4386475142","https://openalex.org/W2793181810","https://openalex.org/W1967489488","https://openalex.org/W2806638311","https://openalex.org/W2891417865","https://openalex.org/W2785635065","https://openalex.org/W2893723691","https://openalex.org/W2517651798","https://openalex.org/W2199653281","https://openalex.org/W2166935850"],"abstract_inverted_index":{"Resistive":[0],"switching":[1,61],"memory":[2,12],"with":[3,34,102],"a":[4,21,69,96],"planar":[5],"graphene":[6,18],"nanoribbon":[7],"structure":[8],"has":[9,47],"shown":[10],"steady":[11],"characteristics.":[13],"By":[14],"mechanically":[15],"exfoliating":[16],"the":[17,30,88],"sheet":[19],"over":[20,51],"layer":[22],"of":[23,37,83],"300nm":[24],"SiO":[25],"<sub":[26],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[27,54],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[28],"substrate,":[29],"device":[31,46],"was":[32],"fabricated":[33],"one":[35],"step":[36],"electron":[38],"beam":[39],"lithography":[40],"and":[41,57,87],"physical":[42],"vapor":[43],"deposition.":[44],"The":[45],"an":[48,75],"on/off":[49],"ratio":[50],"10":[52],"<sup":[53],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sup>":[55],",":[56],"exhibits":[58],"multilevel":[59],"resistive":[60],"characteristics,":[62],"making":[63],"it":[64],"possible":[65],"to":[66,80,98],"act":[67],"as":[68],"synaptic":[70],"device.":[71],"Here":[72],"we":[73],"designed":[74],"artificial":[76],"neuron":[77],"network":[78],"(ANN)":[79],"recognize":[81],"images":[82,89],"6":[84],"different":[85],"letters,":[86],"were":[90],"successfully":[91],"distinguished.":[92],"This":[93],"result":[94],"proposes":[95],"way":[97],"implement":[99],"neuromorphic":[100],"computation":[101],"carbon":[103],"electronics.":[104]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}