{"id":"https://openalex.org/W2783523028","doi":"https://doi.org/10.1109/asicon.2017.8252397","title":"High speed negative capacitance ferroelectric memory","display_name":"High speed negative capacitance ferroelectric memory","publication_year":2017,"publication_date":"2017-10-01","ids":{"openalex":"https://openalex.org/W2783523028","doi":"https://doi.org/10.1109/asicon.2017.8252397","mag":"2783523028"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2017.8252397","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2017.8252397","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 12th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101765199","display_name":"Chun\u2010Yen Chang","orcid":"https://orcid.org/0000-0003-2323-4232"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chun-Yen Chang","raw_affiliation_strings":["Department of Electronics Engineering, National Chiao-Tung University, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, National Chiao-Tung University, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102317412","display_name":"Chia\u2010Chi Fan","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chia-Chi Fan","raw_affiliation_strings":["Department of Electronics Engineering, National Chiao-Tung University, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, National Chiao-Tung University, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048998229","display_name":"Chien Liu","orcid":"https://orcid.org/0000-0002-1571-0588"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chien Liu","raw_affiliation_strings":["Department of Electro-physics, National Chiao-Tung University, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electro-physics, National Chiao-Tung University, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102176019","display_name":"Yu\u2010Chien Chiu","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yu-Chien Chiu","raw_affiliation_strings":["Department of Electronics Engineering, National Chiao-Tung University, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics Engineering, National Chiao-Tung University, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111475166","display_name":"Chun\u2010Hu Cheng","orcid":null},"institutions":[{"id":"https://openalex.org/I134161618","display_name":"National Taiwan Normal University","ror":"https://ror.org/059dkdx38","country_code":"TW","type":"education","lineage":["https://openalex.org/I134161618"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chun-Hu Cheng","raw_affiliation_strings":["Department of Mechatronic Eng, National Taiwan Normal University, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Mechatronic Eng, National Taiwan Normal University, Taiwan","institution_ids":["https://openalex.org/I134161618"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.23986516,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.9961000084877014,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9944000244140625,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.9024633765220642},{"id":"https://openalex.org/keywords/negative-impedance-converter","display_name":"Negative impedance converter","score":0.8718287944793701},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.7766131162643433},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7008262276649475},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.564365804195404},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.5428393483161926},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5003960132598877},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.48805320262908936},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.4385776221752167},{"id":"https://openalex.org/keywords/polarization","display_name":"Polarization (electrochemistry)","score":0.42424774169921875},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.39657583832740784},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3748101592063904},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.18998321890830994},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1743558943271637},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.12139236927032471},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.09516823291778564},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08412382006645203},{"id":"https://openalex.org/keywords/voltage-source","display_name":"Voltage source","score":0.08185294270515442}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.9024633765220642},{"id":"https://openalex.org/C7729237","wikidata":"https://www.wikidata.org/wiki/Q1724261","display_name":"Negative impedance converter","level":4,"score":0.8718287944793701},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.7766131162643433},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7008262276649475},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.564365804195404},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.5428393483161926},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5003960132598877},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.48805320262908936},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.4385776221752167},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.42424774169921875},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.39657583832740784},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3748101592063904},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.18998321890830994},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1743558943271637},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.12139236927032471},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.09516823291778564},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08412382006645203},{"id":"https://openalex.org/C144655898","wikidata":"https://www.wikidata.org/wiki/Q1161128","display_name":"Voltage source","level":3,"score":0.08185294270515442},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2017.8252397","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2017.8252397","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 12th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8100000023841858}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2073535522","https://openalex.org/W2101423497","https://openalex.org/W2160395018","https://openalex.org/W2334220755"],"related_works":["https://openalex.org/W2750534275","https://openalex.org/W2058545256","https://openalex.org/W4396689093","https://openalex.org/W2354985527","https://openalex.org/W2394034449","https://openalex.org/W2904654231","https://openalex.org/W1753561925","https://openalex.org/W4210807885","https://openalex.org/W2051045034","https://openalex.org/W2248915580"],"abstract_inverted_index":{"This":[0],"work":[1],"experimentally":[2],"demonstrated":[3,42],"a":[4,27],"one-transistor":[5],"ferroelectric":[6,16,51,63],"versatile":[7,24],"memory":[8,25],"with":[9],"the":[10,44],"multi-technique":[11],"integration":[12],"of":[13],"negative-capacitance":[14,23,64],"mechanism,":[15],"polarization":[17],"effect":[18],"and":[19,36],"metal-strained":[20],"engineering.":[21],"The":[22,54],"featured":[26],"steep":[28],"sub-60mV/dec":[29],"subthreshold":[30],"swing,":[31],"fast":[32],"20-ns":[33],"switching":[34,65],"speed":[35],"long":[37],"1012cycled":[38],"endurance.":[39],"We":[40],"successfully":[41],"that":[43],"metal-gate-induced":[45],"strain":[46],"could":[47,58],"help":[48],"to":[49,61],"improve":[50],"phase":[52],"transformation.":[53],"excellent":[55],"endurance":[56],"characteristics":[57],"be":[59],"ascribed":[60],"efficient":[62],"under":[66],"low":[67],"program/erase":[68],"voltages.":[69]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}