{"id":"https://openalex.org/W2488463319","doi":"https://doi.org/10.1109/asicon.2015.7517140","title":"Design and testing of CMOS compatible EEPROM","display_name":"Design and testing of CMOS compatible EEPROM","publication_year":2015,"publication_date":"2015-11-01","ids":{"openalex":"https://openalex.org/W2488463319","doi":"https://doi.org/10.1109/asicon.2015.7517140","mag":"2488463319"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2015.7517140","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7517140","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058307890","display_name":"Haibin Yin","orcid":null},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Haibin Yin","raw_affiliation_strings":["VLSI and System Lab, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"VLSI and System Lab, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055738569","display_name":"Xiaohong Peng","orcid":"https://orcid.org/0009-0008-7452-003X"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaohong Peng","raw_affiliation_strings":["VLSI and System Lab, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"VLSI and System Lab, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046722826","display_name":"Peiyuan Wan","orcid":"https://orcid.org/0000-0003-4875-6432"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Peiyuan Wan","raw_affiliation_strings":["Beijing Embedded System Key Lab, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Beijing Embedded System Key Lab, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043189989","display_name":"Jinhui Wang","orcid":"https://orcid.org/0000-0003-4731-8481"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]},{"id":"https://openalex.org/I57328836","display_name":"North Dakota State University","ror":"https://ror.org/05h1bnb22","country_code":"US","type":"education","lineage":["https://openalex.org/I57328836"]}],"countries":["CN","US"],"is_corresponding":false,"raw_author_name":"Jinhui Wang","raw_affiliation_strings":["Department of Electrical and Computer Engineering, North Dakota State University, Fargo, ND, USA","VLSI and System Lab, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, North Dakota State University, Fargo, ND, USA","institution_ids":["https://openalex.org/I57328836"]},{"raw_affiliation_string":"VLSI and System Lab, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112107545","display_name":"Ligang Hou","orcid":null},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ligang Hou","raw_affiliation_strings":["Beijing University of Technology, Beijing, CN"],"affiliations":[{"raw_affiliation_string":"Beijing University of Technology, Beijing, CN","institution_ids":["https://openalex.org/I37796252"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5058307890"],"corresponding_institution_ids":["https://openalex.org/I37796252"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.21307858,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11392","display_name":"Energy Harvesting in Wireless Networks","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11392","display_name":"Energy Harvesting in Wireless Networks","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.994700014591217,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/eeprom","display_name":"EEPROM","score":0.9789443612098694},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7972096800804138},{"id":"https://openalex.org/keywords/eprom","display_name":"EPROM","score":0.7647672295570374},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.6479418277740479},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.584561824798584},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.44426125288009644},{"id":"https://openalex.org/keywords/byte","display_name":"Byte","score":0.43463799357414246},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.42751389741897583},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42022988200187683},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.35420095920562744},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.34056806564331055},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3037884831428528},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11638283729553223},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.07095804810523987}],"concepts":[{"id":"https://openalex.org/C27699510","wikidata":"https://www.wikidata.org/wiki/Q205908","display_name":"EEPROM","level":2,"score":0.9789443612098694},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7972096800804138},{"id":"https://openalex.org/C163980746","wikidata":"https://www.wikidata.org/wiki/Q378210","display_name":"EPROM","level":2,"score":0.7647672295570374},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6479418277740479},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.584561824798584},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.44426125288009644},{"id":"https://openalex.org/C43364308","wikidata":"https://www.wikidata.org/wiki/Q8799","display_name":"Byte","level":2,"score":0.43463799357414246},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.42751389741897583},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42022988200187683},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.35420095920562744},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.34056806564331055},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3037884831428528},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11638283729553223},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.07095804810523987},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2015.7517140","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7517140","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.47999998927116394}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W2039700521","https://openalex.org/W2049849269","https://openalex.org/W2090796748","https://openalex.org/W2108472920","https://openalex.org/W2111323554","https://openalex.org/W2139304324","https://openalex.org/W2185377952"],"related_works":["https://openalex.org/W1562544819","https://openalex.org/W1588693492","https://openalex.org/W1963966819","https://openalex.org/W2167477530","https://openalex.org/W2062000758","https://openalex.org/W2115912089","https://openalex.org/W2123663269","https://openalex.org/W3148257175","https://openalex.org/W3148390583","https://openalex.org/W2285034525"],"abstract_inverted_index":{"A":[0],"single-poly":[1],"CMOS":[2,62,90],"compatible":[3],"Electrically":[4],"Erasable":[5],"Programmable":[6],"Read-Only":[7],"Memory":[8],"(EEPROM)":[9],"is":[10,25,67,85,98],"presented":[11],"in":[12,59,87,92,100],"this":[13,93],"paper.":[14,94],"The":[15],"difference":[16],"between":[17,29,38],"the":[18,22,27,36,46,60,101],"traditional":[19],"structure":[20,24],"and":[21,32,35,41,53,81],"proposed":[23],"that":[26],"capacitance":[28,37],"control":[30],"gate":[31,40],"floating":[33,39],"gate,":[34],"channel":[42],"are":[43],"fabricated":[44,58],"on":[45],"same":[47],"layer.":[48],"This":[49],"approach":[50],"makes":[51],"EEPROM":[52,76],"periphery":[54],"circuits":[55],"can":[56],"be":[57],"standard":[61],"technology,":[63],"so":[64],"development":[65],"cost":[66],"greatly":[68],"reduced.":[69],"An":[70],"8":[71,74],"byte":[72],"\u00d7":[73],"bits":[75],"array":[77],"including":[78],"readout":[79,102],"circuit":[80,84],"charge":[82],"pump":[83],"implemented":[86],"TSMC":[88],"0.35\u03bcm":[89],"technology":[91],"Meanwhile,":[95],"pre-charge":[96],"scheme":[97],"used":[99],"circuit.":[103]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}