{"id":"https://openalex.org/W2482533738","doi":"https://doi.org/10.1109/asicon.2015.7517096","title":"Low noise design of 32-channel snapshot X-ray readout IC","display_name":"Low noise design of 32-channel snapshot X-ray readout IC","publication_year":2015,"publication_date":"2015-11-01","ids":{"openalex":"https://openalex.org/W2482533738","doi":"https://doi.org/10.1109/asicon.2015.7517096","mag":"2482533738"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2015.7517096","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7517096","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100326855","display_name":"Dan Li\u016d","orcid":"https://orcid.org/0000-0002-7742-4368"},"institutions":[{"id":"https://openalex.org/I4210109739","display_name":"First Research Institute of the Ministry of Public Security","ror":"https://ror.org/01dkhme60","country_code":"CN","type":"facility","lineage":["https://openalex.org/I1302611135","https://openalex.org/I4210109739"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Dan Liu","raw_affiliation_strings":["The First Research Institute of Ministry of Public Security, Beijing, China"],"affiliations":[{"raw_affiliation_string":"The First Research Institute of Ministry of Public Security, Beijing, China","institution_ids":["https://openalex.org/I4210109739"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048293972","display_name":"Feng Gao","orcid":"https://orcid.org/0000-0002-4969-5195"},"institutions":[{"id":"https://openalex.org/I4210109739","display_name":"First Research Institute of the Ministry of Public Security","ror":"https://ror.org/01dkhme60","country_code":"CN","type":"facility","lineage":["https://openalex.org/I1302611135","https://openalex.org/I4210109739"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Feng Gao","raw_affiliation_strings":["The First Research Institute of Ministry of Public Security, Beijing, China"],"affiliations":[{"raw_affiliation_string":"The First Research Institute of Ministry of Public Security, Beijing, China","institution_ids":["https://openalex.org/I4210109739"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5090664342","display_name":"Liguang Hao","orcid":null},"institutions":[{"id":"https://openalex.org/I4210109739","display_name":"First Research Institute of the Ministry of Public Security","ror":"https://ror.org/01dkhme60","country_code":"CN","type":"facility","lineage":["https://openalex.org/I1302611135","https://openalex.org/I4210109739"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liguang Hao","raw_affiliation_strings":["The First Research Institute of Ministry of Public Security, Beijing, China"],"affiliations":[{"raw_affiliation_string":"The First Research Institute of Ministry of Public Security, Beijing, China","institution_ids":["https://openalex.org/I4210109739"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5100326855"],"corresponding_institution_ids":["https://openalex.org/I4210109739"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.21230802,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"35","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11044","display_name":"Particle Detector Development and Performance","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3106","display_name":"Nuclear and High Energy Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/preamplifier","display_name":"Preamplifier","score":0.8644382953643799},{"id":"https://openalex.org/keywords/dynamic-range","display_name":"Dynamic range","score":0.6917086839675903},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.5874998569488525},{"id":"https://openalex.org/keywords/detector","display_name":"Detector","score":0.5121166706085205},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.49603280425071716},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.4808705449104309},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.47438767552375793},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4590010643005371},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4417797923088074},{"id":"https://openalex.org/keywords/integrated-circuit-design","display_name":"Integrated circuit design","score":0.4365791082382202},{"id":"https://openalex.org/keywords/wide-dynamic-range","display_name":"Wide dynamic range","score":0.4215390384197235},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.401078999042511},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.35150235891342163},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21347180008888245},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.13092485070228577},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.10605311393737793}],"concepts":[{"id":"https://openalex.org/C14245642","wikidata":"https://www.wikidata.org/wiki/Q399804","display_name":"Preamplifier","level":4,"score":0.8644382953643799},{"id":"https://openalex.org/C87133666","wikidata":"https://www.wikidata.org/wiki/Q1161699","display_name":"Dynamic range","level":2,"score":0.6917086839675903},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.5874998569488525},{"id":"https://openalex.org/C94915269","wikidata":"https://www.wikidata.org/wiki/Q1834857","display_name":"Detector","level":2,"score":0.5121166706085205},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.49603280425071716},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.4808705449104309},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.47438767552375793},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4590010643005371},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4417797923088074},{"id":"https://openalex.org/C74524168","wikidata":"https://www.wikidata.org/wiki/Q1074539","display_name":"Integrated circuit design","level":2,"score":0.4365791082382202},{"id":"https://openalex.org/C2776179129","wikidata":"https://www.wikidata.org/wiki/Q7998640","display_name":"Wide dynamic range","level":2,"score":0.4215390384197235},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.401078999042511},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35150235891342163},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21347180008888245},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.13092485070228577},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.10605311393737793}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2015.7517096","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7517096","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8700000047683716,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W2072750578","https://openalex.org/W2095351048","https://openalex.org/W2111571833","https://openalex.org/W2141921566","https://openalex.org/W2224011569","https://openalex.org/W2276440204","https://openalex.org/W3213656971"],"related_works":["https://openalex.org/W1985488288","https://openalex.org/W2349688862","https://openalex.org/W4385733096","https://openalex.org/W1991661439","https://openalex.org/W2041213051","https://openalex.org/W2053377655","https://openalex.org/W3202881379","https://openalex.org/W2143589838","https://openalex.org/W3149124782","https://openalex.org/W2011470011"],"abstract_inverted_index":{"The":[0,62],"design":[1],"and":[2,35,46,71],"measurement":[3],"of":[4],"low":[5,43],"noise":[6,44],"32-channel":[7],"snapshot":[8],"X-ray":[9],"readout":[10],"integrated":[11],"circuit":[12],"(ROIC)":[13],"are":[14],"proposed":[15],"in":[16,37],"this":[17],"paper.":[18],"This":[19,40],"ROIC":[20,41],"has":[21],"32":[22],"analog":[23],"channels":[24],"collecting":[25],"weak":[26],"current":[27],"from":[28],"detectors,":[29],"then":[30],"transfers":[31],"them":[32],"to":[33],"voltage":[34],"outputs":[36],"differential":[38],"mode.":[39],"adapts":[42],"preamplifier":[45],"S/H":[47],"circuit.":[48],"Measure":[49],"results":[50],"show":[51],"a":[52,75],"dynamic":[53,63],"range":[54,64],"larger":[55],"than":[56,67],"11000:1":[57],"with":[58,74],"3.6pF":[59],"integration":[60],"capacitor.":[61],"is":[65],"higher":[66],"the":[68],"previous":[69],"design's":[70],"very":[72],"close":[73],"famous":[76],"commercial":[77],"IC.":[78]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}