{"id":"https://openalex.org/W2506667870","doi":"https://doi.org/10.1109/asicon.2015.7517084","title":"Dual band power amplifier for handset application","display_name":"Dual band power amplifier for handset application","publication_year":2015,"publication_date":"2015-11-01","ids":{"openalex":"https://openalex.org/W2506667870","doi":"https://doi.org/10.1109/asicon.2015.7517084","mag":"2506667870"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2015.7517084","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7517084","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103171665","display_name":"Jie Jin","orcid":"https://orcid.org/0000-0001-5286-9718"},"institutions":[{"id":"https://openalex.org/I141962983","display_name":"Shanghai University of Engineering Science","ror":"https://ror.org/0557b9y08","country_code":"CN","type":"education","lineage":["https://openalex.org/I141962983"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Jie Jin","raw_affiliation_strings":["Shanghai University of Engineering Science, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"Shanghai University of Engineering Science, Shanghai, China","institution_ids":["https://openalex.org/I141962983"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100709508","display_name":"Xuguang Zhang","orcid":"https://orcid.org/0000-0002-2338-6327"},"institutions":[{"id":"https://openalex.org/I4210147014","display_name":"Shanghai Huali Microelectronics (China)","ror":"https://ror.org/054deg252","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210147014"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xuguang Zhang","raw_affiliation_strings":["RDA Microelectronic Corporation, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"RDA Microelectronic Corporation, Shanghai, China","institution_ids":["https://openalex.org/I4210147014"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005684664","display_name":"Xiaoxiao Jiang","orcid":"https://orcid.org/0000-0002-5452-3056"},"institutions":[{"id":"https://openalex.org/I141962983","display_name":"Shanghai University of Engineering Science","ror":"https://ror.org/0557b9y08","country_code":"CN","type":"education","lineage":["https://openalex.org/I141962983"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaoxiao Jiang","raw_affiliation_strings":["Shanghai University of Engineering Science, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"Shanghai University of Engineering Science, Shanghai, China","institution_ids":["https://openalex.org/I141962983"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5031222718","display_name":"Yiyuan Fang","orcid":null},"institutions":[{"id":"https://openalex.org/I141962983","display_name":"Shanghai University of Engineering Science","ror":"https://ror.org/0557b9y08","country_code":"CN","type":"education","lineage":["https://openalex.org/I141962983"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yiyuan Fang","raw_affiliation_strings":["Shanghai University of Engineering Science, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"Shanghai University of Engineering Science, Shanghai, China","institution_ids":["https://openalex.org/I141962983"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5103171665"],"corresponding_institution_ids":["https://openalex.org/I141962983"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.21661373,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9954000115394592,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6939264535903931},{"id":"https://openalex.org/keywords/power-bandwidth","display_name":"Power bandwidth","score":0.6136126518249512},{"id":"https://openalex.org/keywords/wideband","display_name":"Wideband","score":0.5633636713027954},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.5608216524124146},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5180276036262512},{"id":"https://openalex.org/keywords/handset","display_name":"Handset","score":0.5003318786621094},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4844360649585724},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.42363035678863525},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.4120686948299408},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.30204257369041443},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.17647400498390198},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.14207839965820312},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.09246215224266052}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6939264535903931},{"id":"https://openalex.org/C191907038","wikidata":"https://www.wikidata.org/wiki/Q7236476","display_name":"Power bandwidth","level":5,"score":0.6136126518249512},{"id":"https://openalex.org/C2780202535","wikidata":"https://www.wikidata.org/wiki/Q4524457","display_name":"Wideband","level":2,"score":0.5633636713027954},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.5608216524124146},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5180276036262512},{"id":"https://openalex.org/C2779971919","wikidata":"https://www.wikidata.org/wiki/Q1378949","display_name":"Handset","level":2,"score":0.5003318786621094},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4844360649585724},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.42363035678863525},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.4120686948299408},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.30204257369041443},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17647400498390198},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.14207839965820312},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.09246215224266052},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2015.7517084","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7517084","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8999999761581421,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W655052658","https://openalex.org/W1516273685","https://openalex.org/W1969333752","https://openalex.org/W1986552506","https://openalex.org/W1992728426","https://openalex.org/W2031080763","https://openalex.org/W2152305594","https://openalex.org/W6630905419"],"related_works":["https://openalex.org/W2538009599","https://openalex.org/W2518035769","https://openalex.org/W4311306017","https://openalex.org/W202103422","https://openalex.org/W3090136347","https://openalex.org/W2355154599","https://openalex.org/W3088179638","https://openalex.org/W4362501562","https://openalex.org/W2795275420","https://openalex.org/W2127945469"],"abstract_inverted_index":{"The":[0,22,53],"paper":[1],"makes":[2],"use":[3],"of":[4,48,80],"the":[5,28,36,40,58,75],"wideband":[6],"design":[7,14],"technique":[8],"and":[9,33,64,72],"linear":[10,61],"bias":[11],"circuit":[12],"to":[13],"a":[15,45],"dual":[16],"band":[17],"power":[18,59,63,65,78],"amplifier(PA)":[19],"for":[20],"TD-SCDMA.":[21],"PA":[23],"is":[24],"taped":[25],"out":[26],"in":[27,35,50,82],"2\u03bcm":[29],"InGaP/GaAs":[30],"HBT":[31],"process":[32],"verified":[34],"evaluation":[37],"board":[38],"by":[39],"QPSK":[41],"modulated":[42],"stimulus":[43],"with":[44,74],"chip":[46],"rate":[47],"1.28Mcps":[49],"2.0":[51],"GHz.":[52],"measured":[54],"result":[55],"shows":[56],"that":[57],"gain,":[60],"output":[62],"added":[66],"efficiency":[67],"are":[68],"respectively":[69],"27dB,":[70],"28dBm":[71],"39%":[73],"adjacent":[76],"channel":[77],"ratio":[79],"-33.08dBc":[81],"offset":[83],"\u00b1":[84],"1.6MHz.":[85]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}