{"id":"https://openalex.org/W2506728427","doi":"https://doi.org/10.1109/asicon.2015.7517064","title":"A simulation analysis of back gate effects for FDSOI devices","display_name":"A simulation analysis of back gate effects for FDSOI devices","publication_year":2015,"publication_date":"2015-11-01","ids":{"openalex":"https://openalex.org/W2506728427","doi":"https://doi.org/10.1109/asicon.2015.7517064","mag":"2506728427"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2015.7517064","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7517064","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055838202","display_name":"Yudong Li","orcid":"https://orcid.org/0000-0001-8496-5851"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Li Yudong","raw_affiliation_strings":["Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100679233","display_name":"Bo Tang","orcid":"https://orcid.org/0000-0002-8712-7025"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Tang Bo","raw_affiliation_strings":["Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100927229","display_name":"Yan Jiang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yan Jiang","raw_affiliation_strings":["Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5055838202"],"corresponding_institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.21534211,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.7264705300331116},{"id":"https://openalex.org/keywords/swing","display_name":"Swing","score":0.6662232875823975},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6374943852424622},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5271536707878113},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5242239236831665},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.5173489451408386},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4966745972633362},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.46320948004722595},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.4588402807712555},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42920389771461487},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.42460745573043823},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.40414226055145264},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.35508036613464355},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17704632878303528},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.10969942808151245},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.08297169208526611}],"concepts":[{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.7264705300331116},{"id":"https://openalex.org/C65655974","wikidata":"https://www.wikidata.org/wiki/Q14867674","display_name":"Swing","level":2,"score":0.6662232875823975},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6374943852424622},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5271536707878113},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5242239236831665},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.5173489451408386},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4966745972633362},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.46320948004722595},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4588402807712555},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42920389771461487},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.42460745573043823},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40414226055145264},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.35508036613464355},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17704632878303528},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.10969942808151245},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.08297169208526611}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2015.7517064","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7517064","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.4399999976158142}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W1898301588","https://openalex.org/W2035598937","https://openalex.org/W4299400238"],"related_works":["https://openalex.org/W2360051520","https://openalex.org/W34871393","https://openalex.org/W3168108534","https://openalex.org/W2159000463","https://openalex.org/W2000833818","https://openalex.org/W2049186354","https://openalex.org/W1634484921","https://openalex.org/W4313561735","https://openalex.org/W2131788322","https://openalex.org/W2058564794"],"abstract_inverted_index":{"A":[0],"series":[1],"of":[2,45,69,79],"FDSOI":[3,81],"devices":[4,38,61],"were":[5,32,39,54,62],"simulated":[6,63],"using":[7],"TCAD":[8],"Sentaurus":[9,12],"Process":[10],"and":[11,26,41,52,58,64,72],"Device":[13],"in":[14],"this":[15],"paper.":[16],"Different":[17],"top":[18],"silicon":[19],"thickness":[20,24],"(tsi),":[21],"BOX":[22],"oxide":[23],"(tbox)":[25],"the":[27,37,80],"back":[28],"gate":[29],"voltage":[30,50],"(Vbg)":[31],"adopted.":[33],"The":[34,43],"impacts":[35],"on":[36],"studied":[40,65],"analyzed.":[42],"change":[44],"Sub-threshold":[46],"swing":[47],"(SS),":[48],"threshold":[49],"(Vt)":[51],"Ion/Ioff":[53],"presented.":[55],"Long":[56],"channel":[57,60],"Short":[59],"respectively.":[66],"Appropriate":[67],"values":[68],"tsi,":[70],"tbox":[71],"Vbg":[73],"could":[74],"induce":[75],"a":[76],"better":[77],"performance":[78],"devices.":[82]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}