{"id":"https://openalex.org/W2484910777","doi":"https://doi.org/10.1109/asicon.2015.7517041","title":"A high efficiency all-PMOS charge pump for 3D NAND flash memory","display_name":"A high efficiency all-PMOS charge pump for 3D NAND flash memory","publication_year":2015,"publication_date":"2015-11-01","ids":{"openalex":"https://openalex.org/W2484910777","doi":"https://doi.org/10.1109/asicon.2015.7517041","mag":"2484910777"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2015.7517041","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7517041","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5063418589","display_name":"Liyin Fu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Liyin Fu","raw_affiliation_strings":["Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100445061","display_name":"Yu Wang","orcid":"https://orcid.org/0000-0001-6108-5157"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yu Wang","raw_affiliation_strings":["Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100341261","display_name":"Qi Wang","orcid":"https://orcid.org/0000-0002-1328-8571"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qi Wang","raw_affiliation_strings":["Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079724779","display_name":"Shiyang Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shiyang Yang","raw_affiliation_strings":["Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101967094","display_name":"Yan Yang","orcid":"https://orcid.org/0000-0002-6375-9773"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yan Yang","raw_affiliation_strings":["Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5044308493","display_name":"Zongliang Huo","orcid":"https://orcid.org/0000-0002-9845-5649"},"institutions":[{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]},{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"funder","lineage":["https://openalex.org/I19820366"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zongliang Huo","raw_affiliation_strings":["Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5063418589"],"corresponding_institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210119392"],"apc_list":null,"apc_paid":null,"fwci":0.1973,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.62417471,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10663","display_name":"Advanced Battery Technologies Research","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/2203","display_name":"Automotive Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.8194097280502319},{"id":"https://openalex.org/keywords/charge-pump","display_name":"Charge pump","score":0.7765852212905884},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5402976274490356},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5400570034980774},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.52364182472229},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.48471498489379883},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4815981090068817},{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.4611627459526062},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.4225867986679077},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4014652967453003},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3228853642940521},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.31506654620170593},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.300858736038208},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.26056933403015137}],"concepts":[{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.8194097280502319},{"id":"https://openalex.org/C114825011","wikidata":"https://www.wikidata.org/wiki/Q440704","display_name":"Charge pump","level":4,"score":0.7765852212905884},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5402976274490356},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5400570034980774},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.52364182472229},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.48471498489379883},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4815981090068817},{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.4611627459526062},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.4225867986679077},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4014652967453003},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3228853642940521},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.31506654620170593},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.300858736038208},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.26056933403015137}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2015.7517041","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7517041","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8999999761581421,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2072774679","https://openalex.org/W2116355991","https://openalex.org/W2121249535","https://openalex.org/W2135922570","https://openalex.org/W2163571879"],"related_works":["https://openalex.org/W1999919743","https://openalex.org/W2081382200","https://openalex.org/W2100282217","https://openalex.org/W2157278395","https://openalex.org/W2096191509","https://openalex.org/W2164047446","https://openalex.org/W2126351224","https://openalex.org/W3033168326","https://openalex.org/W2609002938","https://openalex.org/W2117835845"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"an":[3],"improved":[4],"four-phase":[5],"all":[6,104],"PMOS":[7,53,60,105],"charge":[8,31,46,93,119],"pump":[9,32,47,94,120],"based":[10],"on":[11],"the":[12,39,44,59,66,74,112,127],"Pelliconi":[13],"structure":[14,36],"is":[15,82,95],"proposed":[16,30,92,116],"with":[17,103,136],"high":[18,75],"voltage":[19,40,68,77,114,149],"boosting":[20],"efficiency,":[21],"strong":[22],"driving":[23,41],"capability":[24],"and":[25,69,126],"large":[26],"power":[27,70,129,147],"efficiency.":[28],"The":[29,63,91,107],"uses":[33],"a":[34,146],"complementary":[35],"to":[37,57,124],"solve":[38],"problem":[42],"in":[43,97],"conventional":[45],"structures.":[48],"Two":[49],"auxiliary":[50],"substrate":[51],"switching":[52],"transistors":[54,81],"are":[55],"added":[56],"mitigate":[58],"body":[61],"effect.":[62],"degradation":[64],"of":[65,79,86,100,115,131,150],"output":[67,113],"efficiency":[71,130],"caused":[72],"by":[73,84],"threshold":[76],"drop":[78],"high-voltage":[80],"eliminated":[83],"means":[85],"dynamic":[87],"gate":[88],"control":[89],"structure.":[90],"implemented":[96],"2Xnm":[98],"process":[99],"3D":[101],"V-NAND":[102],"transistors.":[106],"simulation":[108],"results":[109],"show":[110],"that":[111],"9":[117],"stages":[118],"can":[121,133],"be":[122,134],"reached":[123],"23.24V,":[125],"maximum":[128],"82.5%":[132],"achieved":[135],"20uA":[137],"load":[138],"current,":[139],"under":[140],"20":[141],"MHz":[142],"clock":[143],"frequency":[144],"for":[145],"supply":[148],"3":[151],"V.":[152]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}