{"id":"https://openalex.org/W2497749655","doi":"https://doi.org/10.1109/asicon.2015.7516993","title":"Novel superjunction collector design of power SiGe HBTs for high fT\u00d7BVCEO\u00d7\u03b2 product","display_name":"Novel superjunction collector design of power SiGe HBTs for high fT\u00d7BVCEO\u00d7\u03b2 product","publication_year":2015,"publication_date":"2015-11-01","ids":{"openalex":"https://openalex.org/W2497749655","doi":"https://doi.org/10.1109/asicon.2015.7516993","mag":"2497749655"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2015.7516993","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7516993","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100753200","display_name":"Xiao Wang","orcid":"https://orcid.org/0000-0003-3177-9240"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xiao Wang","raw_affiliation_strings":["College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100512463","display_name":"Dongyue Jin","orcid":null},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dongyue Jin","raw_affiliation_strings":["College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014759932","display_name":"Wanrong Zhang","orcid":"https://orcid.org/0000-0002-2393-2308"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wanrong Zhang","raw_affiliation_strings":["College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032190168","display_name":"Xinyi Zhao","orcid":"https://orcid.org/0000-0003-0555-243X"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinyi Zhao","raw_affiliation_strings":["College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101067130","display_name":"Yanling Guo","orcid":null},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yanling Guo","raw_affiliation_strings":["College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5045461301","display_name":"Qiang Fu","orcid":"https://orcid.org/0000-0002-3822-3563"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qiang Fu","raw_affiliation_strings":["College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China"],"affiliations":[{"raw_affiliation_string":"College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5100753200"],"corresponding_institution_ids":["https://openalex.org/I37796252"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.21420378,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.6326984763145447},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4915207326412201},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4596857726573944},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.4522261917591095},{"id":"https://openalex.org/keywords/high-voltage","display_name":"High voltage","score":0.44586434960365295},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4380950927734375},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.4253585934638977},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.4131823182106018},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3887959122657776},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3857002258300781},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.37451767921447754},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.36123186349868774},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.2518758475780487},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.22091180086135864},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14966824650764465},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.09713280200958252},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.08211329579353333},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.07080528140068054}],"concepts":[{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.6326984763145447},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4915207326412201},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4596857726573944},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.4522261917591095},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.44586434960365295},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4380950927734375},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.4253585934638977},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.4131823182106018},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3887959122657776},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3857002258300781},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.37451767921447754},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.36123186349868774},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2518758475780487},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.22091180086135864},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14966824650764465},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.09713280200958252},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.08211329579353333},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.07080528140068054}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2015.7516993","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7516993","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5299999713897705,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1967960513","https://openalex.org/W1982403964","https://openalex.org/W2043629860","https://openalex.org/W2051465656","https://openalex.org/W2072441616","https://openalex.org/W2152428267","https://openalex.org/W2473722014"],"related_works":["https://openalex.org/W3043943092","https://openalex.org/W2368164343","https://openalex.org/W2394466813","https://openalex.org/W140953913","https://openalex.org/W1972134613","https://openalex.org/W2006588358","https://openalex.org/W4292794153","https://openalex.org/W2114228564","https://openalex.org/W2954229143","https://openalex.org/W2954255889"],"abstract_inverted_index":{"It":[0,91,159],"is":[1,6,63,86,92,139,160,214],"well":[2],"known":[3],"that":[4,94,162],"there":[5],"a":[7,51,73,100,121,128,149,199],"fundamental":[8],"tradeoff":[9],"among":[10],"the":[11,25,34,47,59,66,79,95,110,117,136,145,170,175,182,201,223],"breakdown":[12,48,118,146,184],"voltage":[13,49,119,147,185],"(including":[14],"BV":[15,20],"<sub":[16,21,29,54,154,206,210],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[17,22,30,55,155,207,211],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">CBO</sub>":[18],"and":[19,33,57,65,114,125,157,180,191,226],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">CEO</sub>":[23,212],"),":[24,32],"cutoff":[26],"frequency":[27,225],"(f":[28],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">T</sub>":[31,56,156,208],"current":[35],"gain":[36],"(\u03b2)":[37],"for":[38,141],"standard":[39,189],"collector":[40,61,190,195],"SiGe":[41,70,163,196,231],"HBTs.":[42,197,232],"In":[43],"order":[44],"to":[45,104,218],"enhance":[46,116],"at":[50,148],"fixed":[52],"f":[53,153,205],"\u03b2,":[58],"superjunction":[60,74],"design":[62],"proposed":[64,140],"model":[67],"of":[68,131,144,152,203,230],"NPN":[69],"HBT":[71,164],"with":[72,88,120,165,188],"P-type":[75,97,133,167,193],"doping":[76],"layer":[77,98,194],"inside":[78,135],"collector-base":[80],"(CB)":[81],"space":[82],"charge":[83],"region":[84],"(SCR)":[85],"established":[87],"SILVACO":[89],"TCAD.":[90],"shown":[93,161],"inserted":[96],"provides":[99],"reverse":[101],"electric":[102,106,173],"field":[103,107],"change":[105],"distribution,":[108],"reduce":[109],"peak":[111,172,177],"ionization":[112,178],"coefficient,":[113],"hence":[115],"slight":[122],"decrease":[123],"off":[124],"\u03b2.":[126],"Furthermore,":[127],"novel":[129],"composite":[130],"double":[132,166],"layers":[134,168],"CB":[137],"SCR":[138],"further":[142],"improvement":[143],"minor":[150],"expense":[151],"\u03b2":[158],"has":[169],"lowest":[171,176],"field,":[174],"coefficient":[179],"consequently":[181],"highest":[183],"when":[186],"compared":[187],"one":[192],"As":[198],"result,":[200],"figure":[202],"merit":[204],"\u00d7BV":[209],"\u00d7\u03b2":[213],"improved":[215],"from":[216],"65945GHz-V":[217],"83729GHz-V,":[219],"which":[220],"effectively":[221],"develops":[222],"high":[224,227],"power":[228],"application":[229]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}