{"id":"https://openalex.org/W2484895001","doi":"https://doi.org/10.1109/asicon.2015.7516973","title":"Influence of nitrogen buffering on oxygen in indium-tin-oxide capped resistive random access memory with NH3 treatment","display_name":"Influence of nitrogen buffering on oxygen in indium-tin-oxide capped resistive random access memory with NH3 treatment","publication_year":2015,"publication_date":"2015-11-01","ids":{"openalex":"https://openalex.org/W2484895001","doi":"https://doi.org/10.1109/asicon.2015.7516973","mag":"2484895001"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2015.7516973","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7516973","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5037467829","display_name":"Ji Chen","orcid":"https://orcid.org/0000-0003-1603-1963"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ji Chen","raw_affiliation_strings":["School of Software and Microelectronics, Peking University, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Software and Microelectronics, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110577124","display_name":"Jen-Chung Lou","orcid":null},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jen-Chung Lou","raw_affiliation_strings":["School of Software and Microelectronics, Peking University, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Software and Microelectronics, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067837460","display_name":"Kuan\u2010Chang Chang","orcid":"https://orcid.org/0000-0001-5056-0047"},"institutions":[{"id":"https://openalex.org/I142974352","display_name":"National Sun Yat-sen University","ror":"https://ror.org/00mjawt10","country_code":"TW","type":"education","lineage":["https://openalex.org/I142974352"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Kuan-Chang Chang","raw_affiliation_strings":["Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan","institution_ids":["https://openalex.org/I142974352"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014223462","display_name":"Ting\u2010Chang Chang","orcid":"https://orcid.org/0000-0002-5301-6693"},"institutions":[{"id":"https://openalex.org/I142974352","display_name":"National Sun Yat-sen University","ror":"https://ror.org/00mjawt10","country_code":"TW","type":"education","lineage":["https://openalex.org/I142974352"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ting-Chang Chang","raw_affiliation_strings":["Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan","institution_ids":["https://openalex.org/I142974352"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058354990","display_name":"Tsung\u2010Ming Tsai","orcid":"https://orcid.org/0000-0002-2106-691X"},"institutions":[{"id":"https://openalex.org/I142974352","display_name":"National Sun Yat-sen University","ror":"https://ror.org/00mjawt10","country_code":"TW","type":"education","lineage":["https://openalex.org/I142974352"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Tsung-Ming Tsai","raw_affiliation_strings":["Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan","institution_ids":["https://openalex.org/I142974352"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110263704","display_name":"Chih-Hung Pan","orcid":null},"institutions":[{"id":"https://openalex.org/I142974352","display_name":"National Sun Yat-sen University","ror":"https://ror.org/00mjawt10","country_code":"TW","type":"education","lineage":["https://openalex.org/I142974352"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chih-Hung Pan","raw_affiliation_strings":["Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan","institution_ids":["https://openalex.org/I142974352"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":"35","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9973999857902527,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.8971888422966003},{"id":"https://openalex.org/keywords/indium-tin-oxide","display_name":"Indium tin oxide","score":0.8182811737060547},{"id":"https://openalex.org/keywords/tin","display_name":"Tin","score":0.8056230545043945},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.6191639304161072},{"id":"https://openalex.org/keywords/indium","display_name":"Indium","score":0.613615095615387},{"id":"https://openalex.org/keywords/nitrogen","display_name":"Nitrogen","score":0.5793564915657043},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.5781821012496948},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.5315468311309814},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5179702043533325},{"id":"https://openalex.org/keywords/oxygen","display_name":"Oxygen","score":0.45791497826576233},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4378221035003662},{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.43330925703048706},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4158240556716919},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.37595996260643005},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.2918239235877991},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2781229615211487},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.1154358983039856},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10864084959030151},{"id":"https://openalex.org/keywords/physical-chemistry","display_name":"Physical chemistry","score":0.08579909801483154},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.08319562673568726}],"concepts":[{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.8971888422966003},{"id":"https://openalex.org/C32737372","wikidata":"https://www.wikidata.org/wiki/Q417718","display_name":"Indium tin oxide","level":3,"score":0.8182811737060547},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.8056230545043945},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.6191639304161072},{"id":"https://openalex.org/C543292547","wikidata":"https://www.wikidata.org/wiki/Q1094","display_name":"Indium","level":2,"score":0.613615095615387},{"id":"https://openalex.org/C537208039","wikidata":"https://www.wikidata.org/wiki/Q627","display_name":"Nitrogen","level":2,"score":0.5793564915657043},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5781821012496948},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5315468311309814},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5179702043533325},{"id":"https://openalex.org/C540031477","wikidata":"https://www.wikidata.org/wiki/Q629","display_name":"Oxygen","level":2,"score":0.45791497826576233},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4378221035003662},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.43330925703048706},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4158240556716919},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.37595996260643005},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2918239235877991},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2781229615211487},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.1154358983039856},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10864084959030151},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.08579909801483154},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.08319562673568726}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2015.7516973","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7516973","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Clean water and sanitation","id":"https://metadata.un.org/sdg/6","score":0.75}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1506538299","https://openalex.org/W1721182639","https://openalex.org/W1835761520","https://openalex.org/W1967876417","https://openalex.org/W1978187198","https://openalex.org/W1995936902","https://openalex.org/W2013500903","https://openalex.org/W2078380616","https://openalex.org/W2082799855","https://openalex.org/W2089216934","https://openalex.org/W2114866278","https://openalex.org/W4234400759"],"related_works":["https://openalex.org/W1969148392","https://openalex.org/W2914061517","https://openalex.org/W2030087524","https://openalex.org/W2019520454","https://openalex.org/W2925026664","https://openalex.org/W2199653281","https://openalex.org/W4230084025","https://openalex.org/W1976476545","https://openalex.org/W2797020525","https://openalex.org/W3172648902"],"abstract_inverted_index":{"We":[0],"demonstrate":[1],"the":[2,11,35,40,52,62,65,73],"extra":[3],"influence":[4],"of":[5,17],"a":[6],"nitrogen":[7,31],"buffering":[8,32],"effect":[9,33,63],"in":[10,34,64],"top":[12],"indium-tin-oxide":[13],"(ITO)":[14],"electrode":[15,67],"layer":[16,37],"resistive":[18],"random":[19],"access":[20],"memory":[21],"(RRAM)":[22],"with":[23],"an":[24],"NH":[25],"<sub":[26,54],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[27,55],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sub>":[28],"treatment.":[29],"The":[30],"switching":[36],"cannot":[38],"counteract":[39],"electric":[41],"field":[42],"force,":[43],"leading":[44,78],"to":[45,51,76,79],"similar":[46],"current-voltage":[47],"(I-V)":[48],"characteristics":[49],"compared":[50],"ITO/Hf:SiO":[53],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[56],"/TiN":[57],"control":[58],"structure":[59],"RRAM.":[60],"However,":[61],"ITO":[66],"layer,":[68],"makes":[69],"it":[70],"easier":[71],"for":[72],"redox":[74],"reaction":[75],"occur,":[77],"improved":[80],"endurance":[81],"and":[82],"concentrated":[83],"voltages.":[84]},"counts_by_year":[],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}