{"id":"https://openalex.org/W2477470289","doi":"https://doi.org/10.1109/asicon.2015.7516943","title":"Overshoot stress impact on HfO2 high-\u03ba layer dynamic SILC","display_name":"Overshoot stress impact on HfO2 high-\u03ba layer dynamic SILC","publication_year":2015,"publication_date":"2015-11-01","ids":{"openalex":"https://openalex.org/W2477470289","doi":"https://doi.org/10.1109/asicon.2015.7516943","mag":"2477470289"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2015.7516943","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7516943","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5047164039","display_name":"Guangxing Wan","orcid":"https://orcid.org/0000-0002-2213-3782"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Guangxing Wan","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","South University of Science and Technology of China, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]},{"raw_affiliation_string":"South University of Science and Technology of China, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049748816","display_name":"Tianli Duan","orcid":"https://orcid.org/0000-0001-5165-4141"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Tianli Duan","raw_affiliation_strings":["South University of Science and Technology of China, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"South University of Science and Technology of China, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102802618","display_name":"Shuxiang Zhang","orcid":"https://orcid.org/0000-0002-6145-1847"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shuxiang Zhang","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","South University of Science and Technology of China, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]},{"raw_affiliation_string":"South University of Science and Technology of China, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085645845","display_name":"Lingli Jiang","orcid":null},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lingli Jiang","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","South University of Science and Technology of China, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]},{"raw_affiliation_string":"South University of Science and Technology of China, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027380729","display_name":"Bo Tang","orcid":"https://orcid.org/0000-0001-5082-5842"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bo Tang","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101794054","display_name":"Chao Zhao","orcid":"https://orcid.org/0000-0001-9502-2955"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chao Zhao","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101936362","display_name":"Huilong Zhu","orcid":"https://orcid.org/0000-0003-1193-467X"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Huilong Zhu","raw_affiliation_strings":["Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China","institution_ids":["https://openalex.org/I4210119392","https://openalex.org/I19820366"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101765075","display_name":"Hongyu Yu","orcid":"https://orcid.org/0000-0002-5756-868X"},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"HongYu Yu","raw_affiliation_strings":["South University of Science and Technology of China, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"South University of Science and Technology of China, Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.21384931,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silc","display_name":"SILC","score":0.9397024512290955},{"id":"https://openalex.org/keywords/overshoot","display_name":"Overshoot (microwave communication)","score":0.7648377418518066},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5876685976982117},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.5294449329376221},{"id":"https://openalex.org/keywords/dynamic-stress","display_name":"Dynamic stress","score":0.5072386264801025},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.48321521282196045},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4677963852882385},{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.46469399333000183},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.4401931166648865},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3642749786376953},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3214431703090668},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.28185245394706726},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2683583199977875},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23772627115249634},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.2246829867362976},{"id":"https://openalex.org/keywords/dynamic-loading","display_name":"Dynamic loading","score":0.15125280618667603},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.12047278881072998}],"concepts":[{"id":"https://openalex.org/C86642149","wikidata":"https://www.wikidata.org/wiki/Q7390375","display_name":"SILC","level":3,"score":0.9397024512290955},{"id":"https://openalex.org/C2780323453","wikidata":"https://www.wikidata.org/wiki/Q7113957","display_name":"Overshoot (microwave communication)","level":2,"score":0.7648377418518066},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5876685976982117},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.5294449329376221},{"id":"https://openalex.org/C2986058073","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Dynamic stress","level":3,"score":0.5072386264801025},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.48321521282196045},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4677963852882385},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.46469399333000183},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.4401931166648865},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3642749786376953},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3214431703090668},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.28185245394706726},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2683583199977875},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23772627115249634},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.2246829867362976},{"id":"https://openalex.org/C2776639496","wikidata":"https://www.wikidata.org/wiki/Q3502426","display_name":"Dynamic loading","level":2,"score":0.15125280618667603},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.12047278881072998},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2015.7516943","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2015.7516943","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 11th International Conference on ASIC (ASICON)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2053674573","https://openalex.org/W2079920341","https://openalex.org/W2098352262","https://openalex.org/W4234217119"],"related_works":["https://openalex.org/W2012569240","https://openalex.org/W1996219590","https://openalex.org/W1998655742","https://openalex.org/W1965100848","https://openalex.org/W1965310374","https://openalex.org/W1998393781","https://openalex.org/W2540318869","https://openalex.org/W2131181908","https://openalex.org/W1991674770","https://openalex.org/W2001057094"],"abstract_inverted_index":{"Overshoot":[0],"stress":[1,10,51],"(mimicking":[2],"the":[3,60,67],"actual":[4],"IC":[5],"operating":[6],"condition)":[7],"in":[8],"dynamic":[9],"induced":[11],"leakage":[12,38],"increase":[13],"(D-SILC)":[14],"on":[15,50,59],"ultra-thin":[16],"HfO":[17],"<sub":[18],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[19],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[20],"(EOT~0.8":[21],"nm)":[22],"high-\u03ba":[23,36],"layer":[24,37],"are":[25],"investigated,":[26],"which":[27,47],"reveals":[28],"that":[29],"overshoot":[30],"is":[31,42,48,63],"of":[32],"great":[33],"concern":[34],"to":[35,65],"current.":[39],"The":[40],"D-SILC":[41],"correlated":[43],"with":[44],"traps":[45],"generation":[46],"dependent":[49],"input":[52],"and":[53],"release.":[54],"A":[55],"degradation":[56],"model":[57],"based":[58],"oxygen":[61],"vacancies":[62],"provided":[64],"understand":[66],"above":[68],"mentioned":[69],"phenomena.":[70]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}