{"id":"https://openalex.org/W2015813805","doi":"https://doi.org/10.1109/asicon.2013.6812060","title":"Device parameter variations of n-MOSFETS with dog-bone layouts in 65nm and 40nm technologies","display_name":"Device parameter variations of n-MOSFETS with dog-bone layouts in 65nm and 40nm technologies","publication_year":2013,"publication_date":"2013-10-01","ids":{"openalex":"https://openalex.org/W2015813805","doi":"https://doi.org/10.1109/asicon.2013.6812060","mag":"2015813805"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2013.6812060","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2013.6812060","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE 10th International Conference on ASIC","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5032281605","display_name":"Lele Jiang","orcid":"https://orcid.org/0000-0002-1326-5871"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lele Jiang","raw_affiliation_strings":["the Shanghai Research Institute of Microelectronics (SHRIME), Peking University, Shanghai, China","Shanghai Research Institute of Microelectronics (SHRIME), Peking University, 201203, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"the Shanghai Research Institute of Microelectronics (SHRIME), Peking University, Shanghai, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Shanghai Research Institute of Microelectronics (SHRIME), Peking University, 201203, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111881235","display_name":"Song Wen","orcid":null},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Song Wen","raw_affiliation_strings":["the Shanghai Research Institute of Microelectronics (SHRIME), Peking University, Shanghai, China","Shanghai Research Institute of Microelectronics (SHRIME), Peking University, 201203, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"the Shanghai Research Institute of Microelectronics (SHRIME), Peking University, Shanghai, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Shanghai Research Institute of Microelectronics (SHRIME), Peking University, 201203, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023668007","display_name":"Wei-Che Tai","orcid":"https://orcid.org/0000-0003-4626-0628"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wei Tai","raw_affiliation_strings":["the Shanghai Research Institute of Microelectronics (SHRIME), Peking University, Shanghai, China","Shanghai Research Institute of Microelectronics (SHRIME), Peking University, 201203, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"the Shanghai Research Institute of Microelectronics (SHRIME), Peking University, Shanghai, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Shanghai Research Institute of Microelectronics (SHRIME), Peking University, 201203, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100435960","display_name":"Lei Wang","orcid":"https://orcid.org/0000-0002-5859-2526"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]},{"id":"https://openalex.org/I4210119392","display_name":"Institute of Microelectronics","ror":"https://ror.org/02s6gs133","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210119392"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wang Lei","raw_affiliation_strings":["the Shanghai Research Institute of Microelectronics (SHRIME), Peking University, Shanghai, China","Shanghai Research Institute of Microelectronics (SHRIME), Peking University, 201203, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"the Shanghai Research Institute of Microelectronics (SHRIME), Peking University, Shanghai, China","institution_ids":["https://openalex.org/I20231570","https://openalex.org/I4210119392"]},{"raw_affiliation_string":"Shanghai Research Institute of Microelectronics (SHRIME), Peking University, 201203, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Lifu Chang","orcid":null},"institutions":[{"id":"https://openalex.org/I19268510","display_name":"Qualcomm (United Kingdom)","ror":"https://ror.org/04d3djg48","country_code":"GB","type":"company","lineage":["https://openalex.org/I19268510","https://openalex.org/I4210087596"]},{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN","GB"],"is_corresponding":false,"raw_author_name":"Lifu Chang","raw_affiliation_strings":["Qualcomm Incorporated","Shanghai Research Institute of Microelectronics (SHRIME), Peking University, 201203, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Qualcomm Incorporated","institution_ids":["https://openalex.org/I19268510"]},{"raw_affiliation_string":"Shanghai Research Institute of Microelectronics (SHRIME), Peking University, 201203, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5103524382","display_name":"Yuhua Cheng","orcid":"https://orcid.org/0009-0007-1973-3481"},"institutions":[{"id":"https://openalex.org/I19268510","display_name":"Qualcomm (United Kingdom)","ror":"https://ror.org/04d3djg48","country_code":"GB","type":"company","lineage":["https://openalex.org/I19268510","https://openalex.org/I4210087596"]},{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN","GB"],"is_corresponding":false,"raw_author_name":"Yuhua Cheng","raw_affiliation_strings":["the School of Electronics Engineering and Computer Science, Peking University, Beijing, China","Qualcomm Incorporated, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"the School of Electronics Engineering and Computer Science, Peking University, Beijing, China","institution_ids":["https://openalex.org/I20231570"]},{"raw_affiliation_string":"Qualcomm Incorporated, China","institution_ids":["https://openalex.org/I19268510"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.24,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.6005309,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7290157079696655},{"id":"https://openalex.org/keywords/design-for-manufacturability","display_name":"Design for manufacturability","score":0.6626559495925903},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.6002947688102722},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5706024169921875},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.5238425731658936},{"id":"https://openalex.org/keywords/photolithography","display_name":"Photolithography","score":0.5062853097915649},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4370276927947998},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4301786720752716},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.425439715385437},{"id":"https://openalex.org/keywords/technology-cad","display_name":"Technology CAD","score":0.41805756092071533},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.38029494881629944},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3751530051231384},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3191406726837158},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.31673508882522583},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2531546354293823}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7290157079696655},{"id":"https://openalex.org/C62064638","wikidata":"https://www.wikidata.org/wiki/Q553878","display_name":"Design for manufacturability","level":2,"score":0.6626559495925903},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.6002947688102722},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5706024169921875},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.5238425731658936},{"id":"https://openalex.org/C105487726","wikidata":"https://www.wikidata.org/wiki/Q622938","display_name":"Photolithography","level":2,"score":0.5062853097915649},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4370276927947998},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4301786720752716},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.425439715385437},{"id":"https://openalex.org/C34929307","wikidata":"https://www.wikidata.org/wiki/Q845636","display_name":"Technology CAD","level":3,"score":0.41805756092071533},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.38029494881629944},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3751530051231384},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3191406726837158},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.31673508882522583},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2531546354293823},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0},{"id":"https://openalex.org/C199639397","wikidata":"https://www.wikidata.org/wiki/Q1788588","display_name":"Engineering drawing","level":1,"score":0.0},{"id":"https://openalex.org/C194789388","wikidata":"https://www.wikidata.org/wiki/Q17855283","display_name":"CAD","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2013.6812060","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2013.6812060","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE 10th International Conference on ASIC","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","score":0.41999998688697815,"id":"https://metadata.un.org/sdg/9"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1995752583","https://openalex.org/W2150922905","https://openalex.org/W2151491192","https://openalex.org/W2155707166","https://openalex.org/W2544704485","https://openalex.org/W6683058461"],"related_works":["https://openalex.org/W2094969048","https://openalex.org/W4254591121","https://openalex.org/W2945285759","https://openalex.org/W3099527205","https://openalex.org/W1989032443","https://openalex.org/W2158054904","https://openalex.org/W1670079182","https://openalex.org/W2050581823","https://openalex.org/W2953251125","https://openalex.org/W2905035045"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"variations":[3,45],"of":[4,16,29,46,48,66,70,78,91,95,103,114,173],"device":[5,139],"parameters,":[6],"such":[7],"as":[8],"threshold":[9],"voltage":[10],"(Vth)":[11],"and":[12,20,35,127,163,171,181],"saturation":[13],"current":[14],"(Idsat),":[15],"the":[17,55,62,67,87,92,109,138,146,169],"devices":[18,50,72,80,97,105,116,119,175],"with":[19,26],"without":[21],"dog-bone-shaped":[22],"active-area":[23],"are":[24,51],"investigated":[25],"a":[27,124,131],"set":[28],"test":[30],"structures":[31],"in":[32,179],"both":[33,160],"65nm":[34,59,125,180],"40nm":[36,84,132],"CMOS":[37],"technology":[38,60,85,126],"processes,":[39],"respectively.":[40],"The":[41],"experiments":[42],"show":[43,136],"that":[44,77,102,137],"Vth/Idsat":[47],"dog-bone":[49,71,96,115,174],"more":[52],"serious":[53],"than":[54],"non-dog-bone":[56,104],"device.":[57],"At":[58,83],"node,":[61,86],"inter-die":[63,88],"absolute":[64,89],"variation":[65,90,141],"measured":[68,93],"Idsat":[69,94],"can":[73,98,120],"reach":[74,99],"19.51%":[75],"while":[76,101],"standard":[79,118],"is":[81,106,142,155],"11.31%.":[82],"21.29%":[100],"15.11%.":[107],"Moreover,":[108],"maximum":[110],"intra-die":[111],"performance":[112,140],"deviation":[113],"from":[117],"be":[121],"24%":[122],"at":[123,130],"about":[128],"42%":[129],"technology.":[133],"SPICE":[134],"simulations":[135],"mainly":[143],"due":[144],"to":[145,158,167],"channel-width":[147],"difference":[148],"caused":[149],"by":[150],"photolithography":[151],"effect.":[152],"Therefore,":[153],"it":[154],"very":[156],"important":[157],"study":[159],"design-for-manufacturability":[161],"(DFM)":[162],"resolution-enhancement-technology":[164],"(RET)":[165],"techniques":[166],"optimize":[168],"design":[170],"fabrication":[172],"for":[176],"IC":[177],"designs":[178],"below":[182],"processes.":[183]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}