{"id":"https://openalex.org/W2021520938","doi":"https://doi.org/10.1109/asicon.2013.6812022","title":"Piezoelectric force microscopy study of local bipolar diode current dependence of preferential domain orientation in BiFeO&lt;inf&gt;3&lt;/inf&gt; thin films with different thicknesses","display_name":"Piezoelectric force microscopy study of local bipolar diode current dependence of preferential domain orientation in BiFeO&lt;inf&gt;3&lt;/inf&gt; thin films with different thicknesses","publication_year":2013,"publication_date":"2013-10-01","ids":{"openalex":"https://openalex.org/W2021520938","doi":"https://doi.org/10.1109/asicon.2013.6812022","mag":"2021520938"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2013.6812022","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2013.6812022","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE 10th International Conference on ASIC","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101070753","display_name":"Long He","orcid":"https://orcid.org/0009-0003-6846-2076"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Long He","raw_affiliation_strings":["State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","State Key Laboratory of ASIC and System, Department of Microelectronics , Fudan University , Shanghai 200433 , China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067"]},{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Department of Microelectronics , Fudan University , Shanghai 200433 , China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101434836","display_name":"Zhihui Chen","orcid":"https://orcid.org/0000-0002-6520-208X"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhihui Chen","raw_affiliation_strings":["State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","State Key Laboratory of ASIC and System, Department of Microelectronics , Fudan University , Shanghai 200433 , China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067"]},{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Department of Microelectronics , Fudan University , Shanghai 200433 , China","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102850722","display_name":"Anquan Jiang","orcid":"https://orcid.org/0000-0002-0272-1552"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Anquan Jiang","raw_affiliation_strings":["State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","State Key Laboratory of ASIC and System, Department of Microelectronics , Fudan University , Shanghai 200433 , China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067"]},{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Department of Microelectronics , Fudan University , Shanghai 200433 , China","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5101070753"],"corresponding_institution_ids":["https://openalex.org/I24943067"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.07014107,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"94","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10886","display_name":"Multiferroics and related materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10886","display_name":"Multiferroics and related materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.9926000237464905,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6685747504234314},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.6205135583877563},{"id":"https://openalex.org/keywords/piezoelectricity","display_name":"Piezoelectricity","score":0.5595102906227112},{"id":"https://openalex.org/keywords/polarization","display_name":"Polarization (electrochemistry)","score":0.5411422252655029},{"id":"https://openalex.org/keywords/space-charge","display_name":"Space charge","score":0.5312554240226746},{"id":"https://openalex.org/keywords/hysteresis","display_name":"Hysteresis","score":0.5150225162506104},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.512260377407074},{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.5079951882362366},{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.49450942873954773},{"id":"https://openalex.org/keywords/thermal-conduction","display_name":"Thermal conduction","score":0.4170435667037964},{"id":"https://openalex.org/keywords/thin-film","display_name":"Thin film","score":0.4168342053890228},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.3224170207977295},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.26505815982818604},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2521514892578125},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.19940587878227234},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.1914525330066681},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.137079656124115},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.1292223334312439},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08725535869598389}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6685747504234314},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6205135583877563},{"id":"https://openalex.org/C100082104","wikidata":"https://www.wikidata.org/wiki/Q183759","display_name":"Piezoelectricity","level":2,"score":0.5595102906227112},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.5411422252655029},{"id":"https://openalex.org/C103132145","wikidata":"https://www.wikidata.org/wiki/Q1669228","display_name":"Space charge","level":3,"score":0.5312554240226746},{"id":"https://openalex.org/C123299182","wikidata":"https://www.wikidata.org/wiki/Q190837","display_name":"Hysteresis","level":2,"score":0.5150225162506104},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.512260377407074},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.5079951882362366},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.49450942873954773},{"id":"https://openalex.org/C172100665","wikidata":"https://www.wikidata.org/wiki/Q7465774","display_name":"Thermal conduction","level":2,"score":0.4170435667037964},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.4168342053890228},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3224170207977295},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.26505815982818604},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2521514892578125},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.19940587878227234},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.1914525330066681},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.137079656124115},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.1292223334312439},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08725535869598389},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2013.6812022","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2013.6812022","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE 10th International Conference on ASIC","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1505486839","https://openalex.org/W1506061749","https://openalex.org/W1604454858","https://openalex.org/W1610977388","https://openalex.org/W1970143870","https://openalex.org/W1982898953","https://openalex.org/W2005328457","https://openalex.org/W2012254064","https://openalex.org/W2064840906","https://openalex.org/W2067975393","https://openalex.org/W2077959527","https://openalex.org/W2080337490","https://openalex.org/W2082622134","https://openalex.org/W2143712367","https://openalex.org/W3103128053","https://openalex.org/W4256381683"],"related_works":["https://openalex.org/W2795319754","https://openalex.org/W120386264","https://openalex.org/W2410108108","https://openalex.org/W2248971758","https://openalex.org/W4327948915","https://openalex.org/W2369514825","https://openalex.org/W4309764133","https://openalex.org/W1974020084","https://openalex.org/W2129539607","https://openalex.org/W2418058283"],"abstract_inverted_index":{"Local":[0],"hysteretic":[1,59],"diode":[2,60],"currents":[3,61],"depending":[4],"on":[5],"domain":[6],"orientations":[7],"have":[8],"been":[9,36,93],"observed":[10],"in":[11,38,72],"epitaxial":[12],"BiFeO":[13],"<sub":[14],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[15],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sub>":[16],"thin":[17],"films.":[18],"The":[19],"mechanism":[20],"behind":[21],"the":[22,33,39,54,64,69,84,96,102],"bilateral":[23],"and":[24,66],"unilateral":[25],"current":[26,89,99],"hysteresis":[27],"as":[28,30],"well":[29],"retention":[31],"of":[32,50,58,68,86],"nanodomains":[34],"has":[35,92],"discussed":[37],"films":[40],"with":[41],"different":[42,87],"thicknesses.":[43],"Piezoelectric":[44],"force":[45],"microscopy":[46],"investigations":[47],"reveal":[48],"principle":[49],"resistive":[51,74],"property":[52],"is":[53],"switchable":[55],"polarization":[56],"control":[57],"other":[62,73],"than":[63],"creation":[65],"rupture":[67],"conductive":[70],"paths":[71],"random":[75],"access":[76],"memories":[77],"mediated":[78],"by":[79],"mobile":[80],"charged":[81],"defects.":[82],"With":[83],"investigation":[85],"leakage":[88],"models,":[90],"it":[91],"found":[94],"that":[95],"space-charge":[97],"limited":[98],"(SCLC)":[100],"dominates":[101],"conduction.":[103]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}