{"id":"https://openalex.org/W2062963650","doi":"https://doi.org/10.1109/asicon.2013.6811942","title":"Fabrication of silicon-based MEMS capacitive microphone structure with thin starting wafer","display_name":"Fabrication of silicon-based MEMS capacitive microphone structure with thin starting wafer","publication_year":2013,"publication_date":"2013-10-01","ids":{"openalex":"https://openalex.org/W2062963650","doi":"https://doi.org/10.1109/asicon.2013.6811942","mag":"2062963650"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2013.6811942","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2013.6811942","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE 10th International Conference on ASIC","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5029704645","display_name":"Xiaoxu Kang","orcid":"https://orcid.org/0000-0001-8244-8279"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Xiaoxu Kang","raw_affiliation_strings":["Process Technology Department, Shanghai IC R&D Center, Shanghai, China","Process Technology Department, Shanghai IC R&D Center, 201210, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Process Technology Department, Shanghai IC R&D Center, Shanghai, China","institution_ids":[]},{"raw_affiliation_string":"Process Technology Department, Shanghai IC R&D Center, 201210, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072628047","display_name":"Chao Yuan","orcid":"https://orcid.org/0000-0003-3116-6049"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Chao Yuan","raw_affiliation_strings":["Process Technology Department, Shanghai IC R&D Center, Shanghai, China","Process Technology Department, Shanghai IC R&D Center, 201210, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Process Technology Department, Shanghai IC R&D Center, Shanghai, China","institution_ids":[]},{"raw_affiliation_string":"Process Technology Department, Shanghai IC R&D Center, 201210, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017122785","display_name":"Qingyun Zuo","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Qingyun Zuo","raw_affiliation_strings":["Process Technology Department, Shanghai IC R&D Center, Shanghai, China","Process Technology Department, Shanghai IC R&D Center, 201210, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Process Technology Department, Shanghai IC R&D Center, Shanghai, China","institution_ids":[]},{"raw_affiliation_string":"Process Technology Department, Shanghai IC R&D Center, 201210, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111787651","display_name":"Changwa Yao","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Changwa Yao","raw_affiliation_strings":["Process Technology Department, Shanghai IC R&D Center, Shanghai, China","Process Technology Department, Shanghai IC R&D Center, 201210, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Process Technology Department, Shanghai IC R&D Center, Shanghai, China","institution_ids":[]},{"raw_affiliation_string":"Process Technology Department, Shanghai IC R&D Center, 201210, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073992621","display_name":"Shoumian Chen","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shoumian Chen","raw_affiliation_strings":["Process Technology Department, Shanghai IC R&D Center, Shanghai, China","Process Technology Department, Shanghai IC R&D Center, 201210, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Process Technology Department, Shanghai IC R&D Center, Shanghai, China","institution_ids":[]},{"raw_affiliation_string":"Process Technology Department, Shanghai IC R&D Center, 201210, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005222448","display_name":"Yuhang Zhao","orcid":"https://orcid.org/0000-0001-8852-2150"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yuhang Zhao","raw_affiliation_strings":["Process Technology Department, Shanghai IC R&D Center, Shanghai, China","Process Technology Department, Shanghai IC R&D Center, 201210, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Process Technology Department, Shanghai IC R&D Center, Shanghai, China","institution_ids":[]},{"raw_affiliation_string":"Process Technology Department, Shanghai IC R&D Center, 201210, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100569932","display_name":"Yilin Yan","orcid":null},"institutions":[{"id":"https://openalex.org/I4210142504","display_name":"Semiconductor Manufacturing International (China)","ror":"https://ror.org/03tf9y485","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210142504"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yilin Yan","raw_affiliation_strings":["Advanced Semiconductor Manufacturing Corporation Limited, China","Advanced Semiconductor Manufacturing Corporation Limited, Shanghai, 200233, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Semiconductor Manufacturing Corporation Limited, China","institution_ids":[]},{"raw_affiliation_string":"Advanced Semiconductor Manufacturing Corporation Limited, Shanghai, 200233, China","institution_ids":["https://openalex.org/I4210142504"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100601308","display_name":"Yuanjun Xu","orcid":"https://orcid.org/0000-0002-4613-6582"},"institutions":[{"id":"https://openalex.org/I4210142504","display_name":"Semiconductor Manufacturing International (China)","ror":"https://ror.org/03tf9y485","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210142504"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuanjun Xu","raw_affiliation_strings":["Advanced Semiconductor Manufacturing Corporation Limited, China","Advanced Semiconductor Manufacturing Corporation Limited, Shanghai, 200233, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Semiconductor Manufacturing Corporation Limited, China","institution_ids":[]},{"raw_affiliation_string":"Advanced Semiconductor Manufacturing Corporation Limited, Shanghai, 200233, China","institution_ids":["https://openalex.org/I4210142504"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100866753","display_name":"Wei-ping Zhou","orcid":null},"institutions":[{"id":"https://openalex.org/I4210142504","display_name":"Semiconductor Manufacturing International (China)","ror":"https://ror.org/03tf9y485","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210142504"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weiping Zhou","raw_affiliation_strings":["Advanced Semiconductor Manufacturing Corporation Limited, China","Advanced Semiconductor Manufacturing Corporation Limited, Shanghai, 200233, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Semiconductor Manufacturing Corporation Limited, China","institution_ids":[]},{"raw_affiliation_string":"Advanced Semiconductor Manufacturing Corporation Limited, Shanghai, 200233, China","institution_ids":["https://openalex.org/I4210142504"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.18489934,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":93},"biblio":{"volume":"86","issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9939000010490417,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.8884459733963013},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6888417601585388},{"id":"https://openalex.org/keywords/capacitive-sensing","display_name":"Capacitive sensing","score":0.6813508868217468},{"id":"https://openalex.org/keywords/microelectromechanical-systems","display_name":"Microelectromechanical systems","score":0.626510500907898},{"id":"https://openalex.org/keywords/microphone","display_name":"Microphone","score":0.6212074756622314},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5351603627204895},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5242319703102112},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.48911648988723755},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.4867849051952362},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4142382740974426},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.40290385484695435},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39402130246162415},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2297179102897644},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.0908001959323883}],"concepts":[{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.8884459733963013},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6888417601585388},{"id":"https://openalex.org/C206755178","wikidata":"https://www.wikidata.org/wiki/Q1131271","display_name":"Capacitive sensing","level":2,"score":0.6813508868217468},{"id":"https://openalex.org/C37977207","wikidata":"https://www.wikidata.org/wiki/Q175561","display_name":"Microelectromechanical systems","level":2,"score":0.626510500907898},{"id":"https://openalex.org/C2778263558","wikidata":"https://www.wikidata.org/wiki/Q46384","display_name":"Microphone","level":3,"score":0.6212074756622314},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5351603627204895},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5242319703102112},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.48911648988723755},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.4867849051952362},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4142382740974426},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40290385484695435},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39402130246162415},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2297179102897644},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0908001959323883},{"id":"https://openalex.org/C157138929","wikidata":"https://www.wikidata.org/wiki/Q570","display_name":"Loudspeaker","level":2,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2013.6811942","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2013.6811942","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE 10th International Conference on ASIC","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.5899999737739563}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W1993657109"],"related_works":["https://openalex.org/W2348740411","https://openalex.org/W1966596465","https://openalex.org/W2051563071","https://openalex.org/W4386858602","https://openalex.org/W2337947459","https://openalex.org/W2118205267","https://openalex.org/W2126912594","https://openalex.org/W1988444705","https://openalex.org/W4292622326","https://openalex.org/W2053577253"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"silicon-based":[3],"MEMs":[4],"capacitive":[5],"microphone":[6,89],"was":[7,20,40,50,83,117],"designed":[8],"and":[9,44,57,70,76,105,131],"fabricated":[10],"on":[11],"150":[12],"mm":[13],"CMOS":[14,46],"Line.":[15],"400":[16],"um":[17],"thin":[18],"wafer":[19,64,69],"used":[21,41,51],"as":[22,42,52],"starting":[23],"wafer,":[24],"which":[25],"can":[26,140],"greatly":[27],"reduce":[28],"process":[29,78,139],"integration":[30,74],"complexity":[31],"accompany":[32],"with":[33],"the":[34,55,87,92,121,125,138,142],"reduced":[35],"cost.":[36],"Low-stress":[37],"poly":[38],"film":[39,49],"back-plate":[43,56],"membrane.":[45,58],"BEOL":[47],"Al":[48],"PAD":[53],"for":[54],"To":[59],"make":[60],"better":[61],"control":[62],"of":[63,135],"bowing":[65],"induced":[66],"by":[67],"thinner":[68],"in-film":[71],"stress,":[72],"optimized":[73],"scheme":[75],"module":[77],"were":[79],"developed.":[80],"CV":[81,93],"test":[82,116],"done":[84,118],"to":[85,119],"check":[86,120],"wafer-level":[88,114],"performance.":[90,123],"From":[91,124],"data,":[94],"C0":[95],"(initial":[96],"capacitance":[97],"at":[98],"0":[99],"V)":[100],"is":[101,108],"about":[102,109],"4.8":[103],"pF,":[104],"pull-in":[106],"voltage":[107],"13.5":[110],"V.":[111],"A":[112],"fast":[113],"reliability":[115],"structure/process":[122],"data":[126],"comparison":[127],"between":[128],"initial":[129],"values":[130,132],"after":[133],"cycles":[134],"stressed":[136],"pulse,":[137],"meet":[141],"device":[143],"requirements.":[144]},"counts_by_year":[{"year":2021,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}