{"id":"https://openalex.org/W1969195868","doi":"https://doi.org/10.1109/asicon.2011.6157299","title":"Origin of high on-state current for dopant-segregated schottky MOSFET","display_name":"Origin of high on-state current for dopant-segregated schottky MOSFET","publication_year":2011,"publication_date":"2011-10-01","ids":{"openalex":"https://openalex.org/W1969195868","doi":"https://doi.org/10.1109/asicon.2011.6157299","mag":"1969195868"},"language":"en","primary_location":{"id":"doi:10.1109/asicon.2011.6157299","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2011.6157299","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 9th IEEE International Conference on ASIC","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5073534779","display_name":"Yang Tang","orcid":"https://orcid.org/0000-0001-5490-3385"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]},{"id":"https://openalex.org/I4391767673","display_name":"State Key Laboratory of ASIC and System","ror":"https://ror.org/01mamgv83","country_code":null,"type":"facility","lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Yang Tang","raw_affiliation_strings":["State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, China","State key lab of Asic and system, Department of Microelectronics, Fudan University, Shanghai 200433, China#TAB#"],"affiliations":[{"raw_affiliation_string":"State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067","https://openalex.org/I4391767673"]},{"raw_affiliation_string":"State key lab of Asic and system, Department of Microelectronics, Fudan University, Shanghai 200433, China#TAB#","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Liu-Lin Zhong","orcid":null},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]},{"id":"https://openalex.org/I4391767673","display_name":"State Key Laboratory of ASIC and System","ror":"https://ror.org/01mamgv83","country_code":null,"type":"facility","lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liu-Lin Zhong","raw_affiliation_strings":["State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, China","State key lab of Asic and system, Department of Microelectronics, Fudan University, Shanghai 200433, China#TAB#"],"affiliations":[{"raw_affiliation_string":"State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067","https://openalex.org/I4391767673"]},{"raw_affiliation_string":"State key lab of Asic and system, Department of Microelectronics, Fudan University, Shanghai 200433, China#TAB#","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110238059","display_name":"Yu-Long Jiang","orcid":"https://orcid.org/0000-0001-8521-5075"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]},{"id":"https://openalex.org/I4391767673","display_name":"State Key Laboratory of ASIC and System","ror":"https://ror.org/01mamgv83","country_code":null,"type":"facility","lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yu-Long Jiang","raw_affiliation_strings":["State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, China","State key lab of Asic and system, Department of Microelectronics, Fudan University, Shanghai 200433, China#TAB#"],"affiliations":[{"raw_affiliation_string":"State Key Lab of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067","https://openalex.org/I4391767673"]},{"raw_affiliation_string":"State key lab of Asic and system, Department of Microelectronics, Fudan University, Shanghai 200433, China#TAB#","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5073534779"],"corresponding_institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4210132426","https://openalex.org/I4391767673"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.05177175,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"691","last_page":"693"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.8486431241035461},{"id":"https://openalex.org/keywords/dopant","display_name":"Dopant","score":0.8049172163009644},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.6622512340545654},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.572041392326355},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.5082699656486511},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4892442226409912},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4848702847957611},{"id":"https://openalex.org/keywords/state","display_name":"State (computer science)","score":0.45928311347961426},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.40285682678222656},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.38000956177711487},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3655967116355896},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3575826585292816},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.16406750679016113},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.162407785654068},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15895062685012817},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.10355478525161743},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08889129757881165}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.8486431241035461},{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.8049172163009644},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.6622512340545654},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.572041392326355},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.5082699656486511},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4892442226409912},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4848702847957611},{"id":"https://openalex.org/C48103436","wikidata":"https://www.wikidata.org/wiki/Q599031","display_name":"State (computer science)","level":2,"score":0.45928311347961426},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.40285682678222656},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38000956177711487},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3655967116355896},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3575826585292816},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.16406750679016113},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.162407785654068},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15895062685012817},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.10355478525161743},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08889129757881165},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asicon.2011.6157299","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asicon.2011.6157299","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 9th IEEE International Conference on ASIC","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W1980008625","https://openalex.org/W2157679815"],"related_works":["https://openalex.org/W2147656057","https://openalex.org/W1540585561","https://openalex.org/W1981646027","https://openalex.org/W2917180890","https://openalex.org/W2614156624","https://openalex.org/W2911343812","https://openalex.org/W2064836534","https://openalex.org/W2124971553","https://openalex.org/W2610840581","https://openalex.org/W2289026509"],"abstract_inverted_index":{"The":[0,30],"origin":[1],"of":[2],"the":[3,36,44,57],"on-state":[4],"current":[5],"(I":[6],"<sub":[7,59],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[8,60],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">on</sub>":[9,61],")":[10],"difference":[11],"between":[12],"dopant-segregated":[13,46],"Schottky":[14],"(DSS)":[15],"source/drain":[16],"MOSFET":[17,20],"and":[18],"conventional":[19],"with":[21,35],"20nm":[22],"channel":[23],"length":[24],"is":[25,41],"investigated":[26],"by":[27],"device":[28],"simulation.":[29],"simulation":[31],"results":[32],"coincide":[33],"well":[34],"published":[37],"experimental":[38],"result.":[39],"It":[40],"revealed":[42],"that":[43],"not-fully-depleted":[45],"layer":[47],"leads":[48],"to":[49,56],"a":[50],"severe":[51],"DIBL":[52],"effect":[53],"which":[54],"contributes":[55],"I":[58],"enhancement":[62],"for":[63],"DSS":[64],"MOSFET.":[65]},"counts_by_year":[{"year":2016,"cited_by_count":1}],"updated_date":"2026-04-17T18:11:37.981687","created_date":"2025-10-10T00:00:00"}