{"id":"https://openalex.org/W4405846263","doi":"https://doi.org/10.1109/apccas62602.2024.10808258","title":"Integrated All-GaN Driver for Non-isolated Resonant Converters","display_name":"Integrated All-GaN Driver for Non-isolated Resonant Converters","publication_year":2024,"publication_date":"2024-11-07","ids":{"openalex":"https://openalex.org/W4405846263","doi":"https://doi.org/10.1109/apccas62602.2024.10808258"},"language":"en","primary_location":{"id":"doi:10.1109/apccas62602.2024.10808258","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apccas62602.2024.10808258","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109064312","display_name":"J.-J. Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I173093425","display_name":"Chang Gung University","ror":"https://ror.org/00d80zx46","country_code":"TW","type":"education","lineage":["https://openalex.org/I173093425"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Jianchan Yang","raw_affiliation_strings":["Chang Gung University,Dept. of Electronic Engineering,Taoyuan,R.O.C"],"affiliations":[{"raw_affiliation_string":"Chang Gung University,Dept. of Electronic Engineering,Taoyuan,R.O.C","institution_ids":["https://openalex.org/I173093425"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078761347","display_name":"Chin Hsia","orcid":null},"institutions":[{"id":"https://openalex.org/I173093425","display_name":"Chang Gung University","ror":"https://ror.org/00d80zx46","country_code":"TW","type":"education","lineage":["https://openalex.org/I173093425"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chin Hsia","raw_affiliation_strings":["Chang Gung University,Dept. of Mechanical Engineering,Taoyuan,R.O.C"],"affiliations":[{"raw_affiliation_string":"Chang Gung University,Dept. of Mechanical Engineering,Taoyuan,R.O.C","institution_ids":["https://openalex.org/I173093425"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113103838","display_name":"Deng-Fong Lu","orcid":null},"institutions":[{"id":"https://openalex.org/I173093425","display_name":"Chang Gung University","ror":"https://ror.org/00d80zx46","country_code":"TW","type":"education","lineage":["https://openalex.org/I173093425"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Deng-Fong Lu","raw_affiliation_strings":["Chang Gung University,Dept. of Mechanical Engineering,Taoyuan,R.O.C"],"affiliations":[{"raw_affiliation_string":"Chang Gung University,Dept. of Mechanical Engineering,Taoyuan,R.O.C","institution_ids":["https://openalex.org/I173093425"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5109064312"],"corresponding_institution_ids":["https://openalex.org/I173093425"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.14917519,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"316","last_page":"319"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9914000034332275,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9822999835014343,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/converters","display_name":"Converters","score":0.8017042875289917},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5212367177009583},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4541064202785492},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4477904140949249},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3649570345878601},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36380821466445923},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.35289400815963745},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3352928161621094},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21173977851867676},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1276766061782837},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.09214499592781067}],"concepts":[{"id":"https://openalex.org/C2778422915","wikidata":"https://www.wikidata.org/wiki/Q10302051","display_name":"Converters","level":3,"score":0.8017042875289917},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5212367177009583},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4541064202785492},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4477904140949249},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3649570345878601},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36380821466445923},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.35289400815963745},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3352928161621094},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21173977851867676},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1276766061782837},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.09214499592781067},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/apccas62602.2024.10808258","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apccas62602.2024.10808258","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.6899999976158142,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W2746313219","https://openalex.org/W2792968665","https://openalex.org/W2946837444","https://openalex.org/W4280587821","https://openalex.org/W4298003865","https://openalex.org/W4309160732","https://openalex.org/W4312967633","https://openalex.org/W4382371034","https://openalex.org/W4385245212","https://openalex.org/W4388279597","https://openalex.org/W4390416269","https://openalex.org/W4391946219"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W631083485","https://openalex.org/W4313452936","https://openalex.org/W2097026685","https://openalex.org/W2480068220","https://openalex.org/W2070883797","https://openalex.org/W2899383815","https://openalex.org/W2004911196","https://openalex.org/W2154984715","https://openalex.org/W2074272557"],"abstract_inverted_index":{"The":[0,24,48,120],"article":[1],"presents":[2],"an":[3,132,139],"innovative":[4],"integrated":[5],"half-bridge":[6,46,121],"resonant":[7,122],"power":[8,18,101,117,149],"converter":[9,118,124],"that":[10],"employs":[11],"zero-voltage":[12],"switching":[13,17,74],"(ZVS)":[14],"to":[15,71,83,159],"minimize":[16],"consumption":[19],"and":[20,34,62],"enhance":[21],"system":[22],"efficiency.":[23],"design":[25],"utilizes":[26],"gallium":[27],"nitride":[28],"(GaN)":[29],"devices,":[30],"integrating":[31],"both":[32],"switches":[33],"gate":[35,49,91,128],"drivers":[36],"on":[37],"the":[38,59,64,73,77,100,126],"same":[39],"silicon":[40],"substrate":[41],"in":[42,113],"a":[43,52,114,147,163],"dual":[44],"complementary":[45],"configuration.":[47],"driver":[50,129],"uses":[51],"direct-coupled":[53],"FET":[54],"logic":[55],"(DCFL)":[56],"architecture":[57],"for":[58,76],"high-side":[60],"drive":[61,87,98],"leverages":[63],"reverse":[65],"conduction":[66],"capabilities":[67],"of":[68,142,151,166],"GaN":[69],"transistors":[70],"emulate":[72],"diodes":[75],"bootstrap":[78],"circuits.":[79],"It":[80,145],"is":[81,103],"designed":[82],"provide":[84],"strong":[85],"current":[86,108,134],"capability":[88],"while":[89],"minimizing":[90],"ringing.":[92],"Additionally,":[93],"it":[94],"offers":[95],"negative":[96],"voltage":[97,141],"when":[99,154],"switch":[102],"turned":[104],"off,":[105],"eliminating":[106],"leakage":[107],"risk.":[109],"This":[110],"integration":[111],"results":[112],"more":[115],"compact":[116],"design.":[119],"buck":[123],"employing":[125],"proposed":[127],"can":[130],"deliver":[131],"output":[133,150,174],"exceeding":[135],"40":[136],"A":[137],"with":[138,162],"input":[140],"48":[143,157],"V.":[144],"achieves":[146],"maximum":[148],"500":[152],"W":[153,173],"converting":[155],"from":[156],"V":[158],"12":[160],"V,":[161],"peak":[164],"efficiency":[165],"${9":[167],"7.":[168],"1":[169],"\\%}$":[170],"at":[171],"200":[172],"power.":[175]},"counts_by_year":[],"updated_date":"2025-12-21T23:12:01.093139","created_date":"2025-10-10T00:00:00"}