{"id":"https://openalex.org/W4364857901","doi":"https://doi.org/10.1109/apccas55924.2022.10090399","title":"Study on Single Event Burnout Effect for 18V LDMOS Based on 0.18\u00b5m Process Technology","display_name":"Study on Single Event Burnout Effect for 18V LDMOS Based on 0.18\u00b5m Process Technology","publication_year":2022,"publication_date":"2022-11-11","ids":{"openalex":"https://openalex.org/W4364857901","doi":"https://doi.org/10.1109/apccas55924.2022.10090399"},"language":"en","primary_location":{"id":"doi:10.1109/apccas55924.2022.10090399","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apccas55924.2022.10090399","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5049585534","display_name":"Langtao Chen","orcid":"https://orcid.org/0000-0003-4509-5755"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Langtao Chen","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China","State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]},{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103267672","display_name":"Xin Zhou","orcid":"https://orcid.org/0000-0002-1820-4445"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xin Zhou","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China","State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","UESTC, Guangdong Institute of Electronic and Engineering, Dongguan, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]},{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]},{"raw_affiliation_string":"UESTC, Guangdong Institute of Electronic and Engineering, Dongguan, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014105999","display_name":"Ying Wang","orcid":"https://orcid.org/0000-0002-1123-369X"},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ying Wang","raw_affiliation_strings":["Beijing Microelectronics Technology Institute,Beijing,China","Beijing Microelectronics Technology Institute, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Microelectronics Technology Institute,Beijing,China","institution_ids":["https://openalex.org/I4210089056"]},{"raw_affiliation_string":"Beijing Microelectronics Technology Institute, Beijing, China","institution_ids":["https://openalex.org/I4210089056"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001729882","display_name":"Ying Kong","orcid":"https://orcid.org/0009-0008-9667-5411"},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ying Kong","raw_affiliation_strings":["Beijing Microelectronics Technology Institute,Beijing,China","Beijing Microelectronics Technology Institute, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Microelectronics Technology Institute,Beijing,China","institution_ids":["https://openalex.org/I4210089056"]},{"raw_affiliation_string":"Beijing Microelectronics Technology Institute, Beijing, China","institution_ids":["https://openalex.org/I4210089056"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041095362","display_name":"Rubin Xie","orcid":null},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Rubin Xie","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China","State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]},{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031099678","display_name":"Ling Peng","orcid":"https://orcid.org/0000-0003-4313-2954"},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ling Peng","raw_affiliation_strings":["Beijing Microelectronics Technology Institute,Beijing,China","Beijing Microelectronics Technology Institute, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Microelectronics Technology Institute,Beijing,China","institution_ids":["https://openalex.org/I4210089056"]},{"raw_affiliation_string":"Beijing Microelectronics Technology Institute, Beijing, China","institution_ids":["https://openalex.org/I4210089056"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078333010","display_name":"Yantu Mo","orcid":null},"institutions":[{"id":"https://openalex.org/I4210089056","display_name":"Beijing Microelectronics Technology Institute","ror":"https://ror.org/007y7ej30","country_code":"CN","type":"other","lineage":["https://openalex.org/I4210089056"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yantu Mo","raw_affiliation_strings":["Beijing Microelectronics Technology Institute,Beijing,China","Beijing Microelectronics Technology Institute, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing Microelectronics Technology Institute,Beijing,China","institution_ids":["https://openalex.org/I4210089056"]},{"raw_affiliation_string":"Beijing Microelectronics Technology Institute, Beijing, China","institution_ids":["https://openalex.org/I4210089056"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020750946","display_name":"Ming Qiao","orcid":"https://orcid.org/0000-0001-6325-9878"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ming Qiao","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China","State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]},{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100320398","display_name":"Bo Zhang","orcid":"https://orcid.org/0000-0003-1288-1549"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4210124847","display_name":"National Engineering Research Center of Electromagnetic Radiation Control Materials","ror":"https://ror.org/02k4dcs46","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210124847"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bo Zhang","raw_affiliation_strings":["State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China","State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]},{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I4210124847","https://openalex.org/I150229711"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"588","last_page":"591"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ldmos","display_name":"LDMOS","score":0.8638523817062378},{"id":"https://openalex.org/keywords/impact-ionization","display_name":"Impact ionization","score":0.5640302300453186},{"id":"https://openalex.org/keywords/ionization","display_name":"Ionization","score":0.5636807680130005},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.523455798625946},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.45682647824287415},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.38195323944091797},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.33199459314346313},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.29458343982696533},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.2758982181549072},{"id":"https://openalex.org/keywords/ion","display_name":"Ion","score":0.2533712685108185},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2201395034790039},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13264405727386475}],"concepts":[{"id":"https://openalex.org/C31672976","wikidata":"https://www.wikidata.org/wiki/Q4042432","display_name":"LDMOS","level":4,"score":0.8638523817062378},{"id":"https://openalex.org/C32921249","wikidata":"https://www.wikidata.org/wiki/Q2001256","display_name":"Impact ionization","level":4,"score":0.5640302300453186},{"id":"https://openalex.org/C198291218","wikidata":"https://www.wikidata.org/wiki/Q190382","display_name":"Ionization","level":3,"score":0.5636807680130005},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.523455798625946},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.45682647824287415},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.38195323944091797},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.33199459314346313},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.29458343982696533},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.2758982181549072},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.2533712685108185},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2201395034790039},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13264405727386475},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/apccas55924.2022.10090399","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apccas55924.2022.10090399","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Clean water and sanitation","score":0.41999998688697815,"id":"https://metadata.un.org/sdg/6"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W2035263431","https://openalex.org/W2099159828","https://openalex.org/W2099644535","https://openalex.org/W2122903059","https://openalex.org/W2136895682","https://openalex.org/W2138552770","https://openalex.org/W2167966226","https://openalex.org/W2775745756"],"related_works":["https://openalex.org/W2127328470","https://openalex.org/W1524243303","https://openalex.org/W2765586609","https://openalex.org/W4293066286","https://openalex.org/W2914174015","https://openalex.org/W2079419546","https://openalex.org/W2002600719","https://openalex.org/W2242538537","https://openalex.org/W2987009625","https://openalex.org/W2022223854"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"single":[3],"event":[4],"burnout":[5],"(SEB)":[6],"effect":[7],"is":[8,23,108,118],"investigated":[9],"for":[10,90,110],"18V":[11],"Lateral-diffused":[12],"MOS":[13],"(LDMOS)":[14],"based":[15],"on":[16,71,134],"0.18\u00b5m":[17],"process":[18],"technology.":[19],"The":[20],"SEB":[21,112],"mechanism":[22],"revealed":[24],"that":[25],"parasitic":[26,54,95,104,127],"bipolar":[27,55,105,128],"turn-on":[28],"and":[29,68,106,125],"the":[30,46,53,59,66,94,103,111,132],"self-maintaining":[31],"induced":[32,41,85],"by":[33],"avalanche":[34,83,107],"ionization.":[35],"At":[36],"early":[37],"stage,":[38],"heavy":[39],"ion":[40],"ionized":[42],"holes":[43,86,101],"inject":[44],"into":[45],"P-body":[47],"(PB)":[48],"region,":[49],"giving":[50],"rise":[51],"to":[52,63,65,76,120],"turn-on.":[56],"Electrons":[57],"from":[58],"source":[60],"are":[61],"allowed":[62],"flow":[64],"drain,":[67],"exert":[69],"modulation":[70],"electric":[72],"field":[73,77],"profile.":[74],"Due":[75],"peak":[78],"formed":[79],"at":[80],"drain":[81],"side,":[82],"ionization":[84],"provide":[87],"a":[88],"supplement":[89],"base":[91],"current":[92],"of":[93,100],"bipolar.":[96],"A":[97],"positive":[98],"feedback":[99],"between":[102],"responsible":[109],"effect.":[113],"Multi-implantation":[114],"radiation":[115],"hardening":[116],"technology":[117],"proposed":[119],"reduce":[121],"PB":[122],"region":[123],"resistance":[124],"suppress":[126],"opened,":[129],"while":[130],"eliminate":[131],"impact":[133],"threshold":[135],"voltage.":[136]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}