{"id":"https://openalex.org/W4210692261","doi":"https://doi.org/10.1109/apccas51387.2021.9687625","title":"Multi-Chips High-Speed and High-Voltage Amplifier","display_name":"Multi-Chips High-Speed and High-Voltage Amplifier","publication_year":2021,"publication_date":"2021-11-22","ids":{"openalex":"https://openalex.org/W4210692261","doi":"https://doi.org/10.1109/apccas51387.2021.9687625"},"language":"en","primary_location":{"id":"doi:10.1109/apccas51387.2021.9687625","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apccas51387.2021.9687625","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE Asia Pacific Conference on Circuit and Systems (APCCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100320360","display_name":"Wen Li","orcid":"https://orcid.org/0009-0000-8555-0041"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Wen Li","raw_affiliation_strings":["Center for Technology Innovation-Production Engineering Hitachi, Ltd., Research &#x0026; Development Group,Yokohama,Japan","Development Group, Yokohama, Japan"],"affiliations":[{"raw_affiliation_string":"Center for Technology Innovation-Production Engineering Hitachi, Ltd., Research &#x0026; Development Group,Yokohama,Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Development Group, Yokohama, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078798209","display_name":"Masami Makuuchi","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4387156034","display_name":"Hitachi High-Tech (Japan)","ror":"https://ror.org/033a1rv92","country_code":null,"type":"company","lineage":["https://openalex.org/I4387156034","https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masami Makuuchi","raw_affiliation_strings":["Hitachi High-Tech Corporation,Hitachi-naka,Japan","Hitachi High-Tech Corporation, Hitachi-naka, Japan"],"affiliations":[{"raw_affiliation_string":"Hitachi High-Tech Corporation,Hitachi-naka,Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi High-Tech Corporation, Hitachi-naka, Japan","institution_ids":["https://openalex.org/I65143321","https://openalex.org/I4387156034"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5088967519","display_name":"Norio Chujo","orcid":"https://orcid.org/0000-0001-9833-8680"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Norio Chujo","raw_affiliation_strings":["Center for Technology Innovation-Production Engineering Hitachi, Ltd., Research &#x0026; Development Group,Yokohama,Japan","Development Group, Yokohama, Japan"],"affiliations":[{"raw_affiliation_string":"Center for Technology Innovation-Production Engineering Hitachi, Ltd., Research &#x0026; Development Group,Yokohama,Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Development Group, Yokohama, Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5100320360"],"corresponding_institution_ids":["https://openalex.org/I65143321"],"apc_list":null,"apc_paid":null,"fwci":0.0836,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.40861219,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"201","last_page":"204"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/slew-rate","display_name":"Slew rate","score":0.7883385419845581},{"id":"https://openalex.org/keywords/ldmos","display_name":"LDMOS","score":0.686236560344696},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.665993332862854},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5817774534225464},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5744208693504333},{"id":"https://openalex.org/keywords/buffer-amplifier","display_name":"Buffer amplifier","score":0.5400688052177429},{"id":"https://openalex.org/keywords/swing","display_name":"Swing","score":0.4857664406299591},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.4515957534313202},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.4444465637207031},{"id":"https://openalex.org/keywords/high-voltage","display_name":"High voltage","score":0.4258372187614441},{"id":"https://openalex.org/keywords/voltage-divider","display_name":"Voltage divider","score":0.3810492753982544},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3567556142807007},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3564029335975647},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.31964319944381714},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1548294723033905},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.13408389687538147},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.11885136365890503}],"concepts":[{"id":"https://openalex.org/C82517063","wikidata":"https://www.wikidata.org/wiki/Q1591315","display_name":"Slew rate","level":3,"score":0.7883385419845581},{"id":"https://openalex.org/C31672976","wikidata":"https://www.wikidata.org/wiki/Q4042432","display_name":"LDMOS","level":4,"score":0.686236560344696},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.665993332862854},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5817774534225464},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5744208693504333},{"id":"https://openalex.org/C127749002","wikidata":"https://www.wikidata.org/wiki/Q978470","display_name":"Buffer amplifier","level":4,"score":0.5400688052177429},{"id":"https://openalex.org/C65655974","wikidata":"https://www.wikidata.org/wiki/Q14867674","display_name":"Swing","level":2,"score":0.4857664406299591},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.4515957534313202},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.4444465637207031},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.4258372187614441},{"id":"https://openalex.org/C49324399","wikidata":"https://www.wikidata.org/wiki/Q466758","display_name":"Voltage divider","level":3,"score":0.3810492753982544},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3567556142807007},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3564029335975647},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.31964319944381714},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1548294723033905},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.13408389687538147},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.11885136365890503},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/apccas51387.2021.9687625","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apccas51387.2021.9687625","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE Asia Pacific Conference on Circuit and Systems (APCCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5799999833106995,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1996242782","https://openalex.org/W2018074989","https://openalex.org/W2119355800","https://openalex.org/W2155789745","https://openalex.org/W2279551336","https://openalex.org/W2800367197"],"related_works":["https://openalex.org/W2055638955","https://openalex.org/W1988628021","https://openalex.org/W1966592360","https://openalex.org/W1979513864","https://openalex.org/W1670720143","https://openalex.org/W4367301189","https://openalex.org/W4212874059","https://openalex.org/W1998057040","https://openalex.org/W2548571003","https://openalex.org/W3114822450"],"abstract_inverted_index":{"A":[0],"linear":[1],"amplifying":[2],"circuit":[3,19,42],"with":[4,25,45,50,66],"high":[5,7],"voltage,":[6],"slew":[8,68],"rate":[9,69],"and":[10,73],"wide":[11],"bandwidth":[12,74],"is":[13,20,43,63,81],"presented":[14],"in":[15],"this":[16],"paper.":[17],"The":[18,29,41,54,78],"composed":[21],"of":[22,70,75],"three":[23],"chips":[24],"different":[26],"substrate":[27],"voltage.":[28,40,53],"maximum":[30],"output":[31,60],"voltage":[32,61],"swing":[33,62],"can":[34],"achieve":[35],"almost":[36],"twice":[37],"the":[38,59,67],"withstand":[39,52],"verified":[44],"a":[46],"0.25-um":[47],"SOI-LDMOS":[48],"technology":[49],"200V":[51],"experimental":[55],"result":[56],"shows":[57],"that":[58],"425":[64],"Vpp":[65],"<tex>$1120\\":[71],"\\mathrm{V}/\\mu\\text{sec}$</tex>":[72],"2.3":[76],"MHz.":[77],"multi-chips":[79],"amplifier":[80],"expected":[82],"to":[83],"be":[84],"used":[85],"for":[86],"many":[87],"industrial":[88],"applications.":[89]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}