{"id":"https://openalex.org/W2999091823","doi":"https://doi.org/10.1109/apccas47518.2019.8953098","title":"Improved MESFET/pHEMT Models and Their Comprehensive Comparison With Standard Ones","display_name":"Improved MESFET/pHEMT Models and Their Comprehensive Comparison With Standard Ones","publication_year":2019,"publication_date":"2019-11-01","ids":{"openalex":"https://openalex.org/W2999091823","doi":"https://doi.org/10.1109/apccas47518.2019.8953098","mag":"2999091823"},"language":"en","primary_location":{"id":"doi:10.1109/apccas47518.2019.8953098","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apccas47518.2019.8953098","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108194588","display_name":"Josef Dobe\u0161","orcid":null},"institutions":[{"id":"https://openalex.org/I44504214","display_name":"Czech Technical University in Prague","ror":"https://ror.org/03kqpb082","country_code":"CZ","type":"education","lineage":["https://openalex.org/I44504214"]}],"countries":["CZ"],"is_corresponding":true,"raw_author_name":"Josef Dobes","raw_affiliation_strings":["Department of Radioelectronics, Czech Technical University, Prague"],"affiliations":[{"raw_affiliation_string":"Department of Radioelectronics, Czech Technical University, Prague","institution_ids":["https://openalex.org/I44504214"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000201245","display_name":"Martin Gr\u00e1bner","orcid":"https://orcid.org/0000-0003-1399-094X"},"institutions":[{"id":"https://openalex.org/I44504214","display_name":"Czech Technical University in Prague","ror":"https://ror.org/03kqpb082","country_code":"CZ","type":"education","lineage":["https://openalex.org/I44504214"]}],"countries":["CZ"],"is_corresponding":false,"raw_author_name":"Martin Grabner","raw_affiliation_strings":["Department of Radioelectronics, Czech Technical University, Prague"],"affiliations":[{"raw_affiliation_string":"Department of Radioelectronics, Czech Technical University, Prague","institution_ids":["https://openalex.org/I44504214"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5083744068","display_name":"Viera Biolkov\u00e1","orcid":"https://orcid.org/0000-0003-2589-2722"},"institutions":[{"id":"https://openalex.org/I60587646","display_name":"Brno University of Technology","ror":"https://ror.org/03613d656","country_code":"CZ","type":"education","lineage":["https://openalex.org/I60587646"]}],"countries":["CZ"],"is_corresponding":false,"raw_author_name":"Viera Biolkova","raw_affiliation_strings":["Department of Radioelectronics, Brno University of Technology, Czech Republic"],"affiliations":[{"raw_affiliation_string":"Department of Radioelectronics, Brno University of Technology, Czech Republic","institution_ids":["https://openalex.org/I60587646"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5108194588"],"corresponding_institution_ids":["https://openalex.org/I44504214"],"apc_list":null,"apc_paid":null,"fwci":0.4769,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.66703902,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"13","issue":null,"first_page":"149","last_page":"152"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mesfet","display_name":"MESFET","score":0.8941746950149536},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7001008987426758},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.43135586380958557},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.35944122076034546},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3540792167186737},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3502051830291748},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.29256391525268555},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2382735013961792},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.14117127656936646},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1388045847415924},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.07483786344528198}],"concepts":[{"id":"https://openalex.org/C134123091","wikidata":"https://www.wikidata.org/wiki/Q1837339","display_name":"MESFET","level":5,"score":0.8941746950149536},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7001008987426758},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.43135586380958557},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.35944122076034546},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3540792167186737},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3502051830291748},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.29256391525268555},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2382735013961792},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14117127656936646},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1388045847415924},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.07483786344528198}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/apccas47518.2019.8953098","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apccas47518.2019.8953098","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.6899999976158142,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W2004714323","https://openalex.org/W2132839727","https://openalex.org/W2182550779","https://openalex.org/W2344471768","https://openalex.org/W2560048317","https://openalex.org/W2802718652","https://openalex.org/W2904448974"],"related_works":["https://openalex.org/W2128824035","https://openalex.org/W2162479689","https://openalex.org/W2042143892","https://openalex.org/W1977515036","https://openalex.org/W1518579298","https://openalex.org/W1996804190","https://openalex.org/W2032513747","https://openalex.org/W2061665904","https://openalex.org/W2075056558","https://openalex.org/W2606924502"],"abstract_inverted_index":{"In":[0,61],"the":[1,9,14,31,49,64,71,74,80,83,97,124,135,139,155,159,170],"paper,":[2],"we":[3],"suggest":[4],"several":[5],"new":[6],"updates":[7],"to":[8,70,79,89,96,131],"equations":[10,32],"that":[11,33,158],"ordinarily":[12],"describe":[13],"MESFETs":[15],"and":[16,21,92,114,134,148,154],"pHEMTs":[17,54,118],"in":[18,180],"both":[19,90],"DC":[20,146],"time":[22],"domains.":[23],"We":[24],"have":[25,119,151],"composed":[26],"some":[27],"novel":[28],"forms":[29],"of":[30,57,73,82,85,105,161],"are":[34],"especially":[35],"convenient":[36],"for":[37,46,122],"accurate":[38],"describing":[39],"transconductance":[40],"voltage":[41],"dependences,":[42],"which":[43],"is":[44,66,165],"important":[45],"realistic":[47],"modeling":[48,181],"low":[50],"noise":[51],"amplifiers":[52],"with":[53,87,110,169],"including":[55],"calculations":[56],"their":[58],"IP3":[59],"points.":[60],"other":[62],"words,":[63],"attention":[65],"not":[67],"only":[68],"directed":[69],"precision":[72,160],"equation":[75],"themselves,":[76],"but":[77],"also":[78],"accuracy":[81],"derivatives":[84],"them":[86],"respect":[88],"gate-source":[91],"gate-drain":[93],"voltages":[94],"(up":[95],"third":[98],"order).":[99],"The":[100],"paper":[101],"contains":[102],"comprehensive":[103],"comparisons":[104,156],"our":[106,111,162],"recently":[107],"updated":[108],"models":[109],"previous":[112],"one":[113],"many":[115],"others;":[116],"two":[117],"been":[120,152],"used":[121],"comparisons:":[123],"first":[125],"working":[126],"from":[127],"1":[128],"GHz":[129],"up":[130],"18":[132],"GHz,":[133],"second":[136],"operating":[137],"at":[138,166],"frequencies":[140],"greater":[141],"than":[142],"100":[143],"GHz.":[144],"Both":[145],"characteristics":[147],"high-frequency":[149],"s-parameters":[150],"compared,":[153],"show":[157],"model":[163,171],"modifications":[164],"least":[167],"comparable":[168],"like":[172],"TriQuint":[173],"ones.":[174],"(And":[175],"they":[176],"seem":[177],"even":[178],"better":[179],"input":[182],"reflection":[183],"coefficient,":[184],"e.g.).":[185]},"counts_by_year":[{"year":2022,"cited_by_count":3},{"year":2020,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}