{"id":"https://openalex.org/W2909729744","doi":"https://doi.org/10.1109/apccas.2018.8605672","title":"A Radiation-Hardened Trench Power MOSFET for Aerospace Applications","display_name":"A Radiation-Hardened Trench Power MOSFET for Aerospace Applications","publication_year":2018,"publication_date":"2018-10-01","ids":{"openalex":"https://openalex.org/W2909729744","doi":"https://doi.org/10.1109/apccas.2018.8605672","mag":"2909729744"},"language":"en","primary_location":{"id":"doi:10.1109/apccas.2018.8605672","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apccas.2018.8605672","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100698297","display_name":"Yang Feng","orcid":"https://orcid.org/0000-0002-1727-4679"},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Feng Yang","raw_affiliation_strings":["Analog IC Design Center, Sichuan Institute of Solid-State Circuits, Chongqing, China"],"affiliations":[{"raw_affiliation_string":"Analog IC Design Center, Sichuan Institute of Solid-State Circuits, Chongqing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101479028","display_name":"Hao Wu","orcid":"https://orcid.org/0000-0003-3018-9054"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hao Wu","raw_affiliation_strings":["Analog IC Design Center, Sichuan Institute of Solid-State Circuits, Chongqing, China"],"affiliations":[{"raw_affiliation_string":"Analog IC Design Center, Sichuan Institute of Solid-State Circuits, Chongqing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007684115","display_name":"Fu Xiaojun","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Xiaojun Fu","raw_affiliation_strings":["Analog IC Design Center, Sichuan Institute of Solid-State Circuits, Chongqing, China"],"affiliations":[{"raw_affiliation_string":"Analog IC Design Center, Sichuan Institute of Solid-State Circuits, Chongqing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100561799","display_name":"Fan Xiang","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Fan Xiang","raw_affiliation_strings":["Analog IC Design Center, Sichuan Institute of Solid-State Circuits, Chongqing, China"],"affiliations":[{"raw_affiliation_string":"Analog IC Design Center, Sichuan Institute of Solid-State Circuits, Chongqing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090437142","display_name":"Zhi Zheng","orcid":"https://orcid.org/0000-0001-8744-8526"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Zhi Zheng","raw_affiliation_strings":["Analog IC Design Center, Sichuan Institute of Solid-State Circuits, Chongqing, China"],"affiliations":[{"raw_affiliation_string":"Analog IC Design Center, Sichuan Institute of Solid-State Circuits, Chongqing, China","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5090837004","display_name":"Fei Xiang","orcid":"https://orcid.org/0000-0003-3644-7114"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Fei Xiang","raw_affiliation_strings":["Analog IC Design Center, Sichuan Institute of Solid-State Circuits, Chongqing, China"],"affiliations":[{"raw_affiliation_string":"Analog IC Design Center, Sichuan Institute of Solid-State Circuits, Chongqing, China","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5100698297"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.2575,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.59510422,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"463","last_page":"467"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6712067127227783},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6696041226387024},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.6237867474555969},{"id":"https://openalex.org/keywords/trench","display_name":"Trench","score":0.6111977100372314},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5656019449234009},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5487931966781616},{"id":"https://openalex.org/keywords/shallow-trench-isolation","display_name":"Shallow trench isolation","score":0.5221403241157532},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.5139250755310059},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4699898958206177},{"id":"https://openalex.org/keywords/radiation","display_name":"Radiation","score":0.46483489871025085},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4197332262992859},{"id":"https://openalex.org/keywords/high-voltage","display_name":"High voltage","score":0.4143213629722595},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22241798043251038},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.19163185358047485},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.14019018411636353},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1358526647090912},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.12933215498924255}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6712067127227783},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6696041226387024},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.6237867474555969},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.6111977100372314},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5656019449234009},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5487931966781616},{"id":"https://openalex.org/C105066941","wikidata":"https://www.wikidata.org/wiki/Q1424524","display_name":"Shallow trench isolation","level":4,"score":0.5221403241157532},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.5139250755310059},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4699898958206177},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.46483489871025085},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4197332262992859},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.4143213629722595},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22241798043251038},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19163185358047485},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.14019018411636353},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1358526647090912},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.12933215498924255},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/apccas.2018.8605672","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apccas.2018.8605672","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.6800000071525574}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W267840210","https://openalex.org/W589744691","https://openalex.org/W1540206583","https://openalex.org/W2105352778","https://openalex.org/W2131271035","https://openalex.org/W2132923464","https://openalex.org/W2740229630"],"related_works":["https://openalex.org/W2006928005","https://openalex.org/W2119814266","https://openalex.org/W2749871982","https://openalex.org/W2104314732","https://openalex.org/W2140756430","https://openalex.org/W2188624265","https://openalex.org/W1992381812","https://openalex.org/W1869246841","https://openalex.org/W2006469970","https://openalex.org/W1507517533"],"abstract_inverted_index":{"Power":[0],"MOSFETs":[1],"are":[2],"important":[3],"satellite":[4],"components.":[5],"In":[6,16],"this":[7],"paper,":[8],"a":[9,84,91,119,144],"radiation-hardened":[10,77],"trench":[11,74,78,86],"power":[12,79,87],"MOSFET":[13,80,88],"is":[14,29,51,81,104,109,116,135],"designed.":[15],"order":[17],"to":[18],"meet":[19],"the":[20,33,44,55,59,64,68,73],"requirements":[21],"of":[22,58,67,94,123,147,152],"aerospace":[23],"uses,":[24],"anti-total-dose":[25],"radiation":[26],"effect":[27,49],"performance":[28,50],"improved":[30,52],"by":[31,53],"changing":[32],"process":[34,89],"sequences,":[35],"gate":[36,112,132],"oxide":[37],"growing":[38],"at":[39,143],"low":[40],"temperature":[41],"and":[42,71,111,130,149],"controlling":[43],"growth":[45],"atmosphere":[46],"strictly;":[47],"Anti-single-event":[48],"increasing":[54],"injection":[56],"dose":[57,122],"P-type":[60],"base":[61],"region,":[62],"reducing":[63],"doping":[65],"concentration":[66],"source":[69],"region":[70],"shortening":[72],"width.":[75],"The":[76,100,126],"fabricated":[82],"using":[83],"0.3-\u00b5m-line-width":[85],"with":[90],"chip":[92],"area":[93],"2.09":[95],"mm":[96],"\u00d7":[97],"2.79":[98],"mm.":[99],"drain-to-source":[101,106,150],"breakdown":[102],"voltage":[103,114,146,151],"41V,":[105],"on-state":[107],"resistance":[108],"6m\u03a9,":[110],"threshold":[113,134],"drift":[115],"\u20130.9V":[117],"after":[118],"total":[120],"ionizing":[121],"100-krad":[124],"(Si).":[125],"measured":[127],"single-event":[128,131],"burnout":[129],"rupture":[133],"above":[136],"94.6":[137],"MeV/(mg/cm":[138],"<sup":[139],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[140],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[141],")":[142],"gate-to-source":[145],"\u20135V":[148],"30V.":[153]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":3},{"year":2020,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}