{"id":"https://openalex.org/W2066631093","doi":"https://doi.org/10.1109/apccas.2012.6419071","title":"Electrostatic discharge (ESD) protection of RF integrated circuits","display_name":"Electrostatic discharge (ESD) protection of RF integrated circuits","publication_year":2012,"publication_date":"2012-12-01","ids":{"openalex":"https://openalex.org/W2066631093","doi":"https://doi.org/10.1109/apccas.2012.6419071","mag":"2066631093"},"language":"en","primary_location":{"id":"doi:10.1109/apccas.2012.6419071","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apccas.2012.6419071","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE Asia Pacific Conference on Circuits and Systems","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://stars.library.ucf.edu/scopus2010/3906","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086094705","display_name":"Juin J. Liou","orcid":"https://orcid.org/0000-0002-5815-5078"},"institutions":[{"id":"https://openalex.org/I106165777","display_name":"University of Central Florida","ror":"https://ror.org/036nfer12","country_code":"US","type":"education","lineage":["https://openalex.org/I106165777"]},{"id":"https://openalex.org/I118292597","display_name":"National Taipei University of Technology","ror":"https://ror.org/00cn92c09","country_code":"TW","type":"education","lineage":["https://openalex.org/I118292597"]}],"countries":["TW","US"],"is_corresponding":true,"raw_author_name":"Juin J. Liou","raw_affiliation_strings":["National Taipei University of Technology, Taiwan","University of Central Florida,Orlando,USA"],"affiliations":[{"raw_affiliation_string":"National Taipei University of Technology, Taiwan","institution_ids":["https://openalex.org/I118292597"]},{"raw_affiliation_string":"University of Central Florida,Orlando,USA","institution_ids":["https://openalex.org/I106165777"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114161564","display_name":"Chang Jiang","orcid":null},"institutions":[{"id":"https://openalex.org/I1327237609","display_name":"Ministry of Education of the People's Republic of China","ror":"https://ror.org/01mv9t934","country_code":"CN","type":"funder","lineage":["https://openalex.org/I1327237609","https://openalex.org/I4210127390"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chang Jiang","raw_affiliation_strings":["Ministry of Education, China"],"affiliations":[{"raw_affiliation_string":"Ministry of Education, China","institution_ids":["https://openalex.org/I1327237609"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5071850529","display_name":"Feng Chia","orcid":null},"institutions":[{"id":"https://openalex.org/I4880106","display_name":"Feng Chia University","ror":"https://ror.org/05vhczg54","country_code":"TW","type":"education","lineage":["https://openalex.org/I4880106"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Feng Chia","raw_affiliation_strings":["Feng Chia University, Taichung, Taichung, TW","Feng Chia Univ.,   Taiwan"],"affiliations":[{"raw_affiliation_string":"Feng Chia University, Taichung, Taichung, TW","institution_ids":["https://openalex.org/I4880106"]},{"raw_affiliation_string":"Feng Chia Univ.,   Taiwan","institution_ids":["https://openalex.org/I4880106"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5086094705"],"corresponding_institution_ids":["https://openalex.org/I106165777","https://openalex.org/I118292597"],"apc_list":null,"apc_paid":null,"fwci":0.2493,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.6095923,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"30","issue":null,"first_page":"460","last_page":"462"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9940000176429749,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.9776793718338013},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.8014065027236938},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.6036872267723083},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5972129106521606},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.528745174407959},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5207797884941101},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42821377515792847},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.42144763469696045},{"id":"https://openalex.org/keywords/semiconductor-industry","display_name":"Semiconductor industry","score":0.4189787209033966},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.4155903160572052},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.4151405692100525},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3470286726951599},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.341668963432312},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.15933066606521606},{"id":"https://openalex.org/keywords/manufacturing-engineering","display_name":"Manufacturing engineering","score":0.07378765940666199}],"concepts":[{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.9776793718338013},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.8014065027236938},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.6036872267723083},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5972129106521606},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.528745174407959},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5207797884941101},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42821377515792847},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.42144763469696045},{"id":"https://openalex.org/C2987888538","wikidata":"https://www.wikidata.org/wiki/Q2986369","display_name":"Semiconductor industry","level":2,"score":0.4189787209033966},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.4155903160572052},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.4151405692100525},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3470286726951599},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.341668963432312},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15933066606521606},{"id":"https://openalex.org/C117671659","wikidata":"https://www.wikidata.org/wiki/Q11049265","display_name":"Manufacturing engineering","level":1,"score":0.07378765940666199},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/apccas.2012.6419071","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apccas.2012.6419071","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE Asia Pacific Conference on Circuits and Systems","raw_type":"proceedings-article"},{"id":"pmh:oai:stars.library.ucf.edu:scopus2010-4905","is_oa":true,"landing_page_url":"https://stars.library.ucf.edu/scopus2010/3906","pdf_url":null,"source":{"id":"https://openalex.org/S4210172555","display_name":"Journal of International Crisis and Risk Communication Research","issn_l":"2576-0017","issn":["2576-0017","2576-0025"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Scopus Export 2010-2014","raw_type":"text"}],"best_oa_location":{"id":"pmh:oai:stars.library.ucf.edu:scopus2010-4905","is_oa":true,"landing_page_url":"https://stars.library.ucf.edu/scopus2010/3906","pdf_url":null,"source":{"id":"https://openalex.org/S4210172555","display_name":"Journal of International Crisis and Risk Communication Research","issn_l":"2576-0017","issn":["2576-0017","2576-0025"],"is_oa":true,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Scopus Export 2010-2014","raw_type":"text"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","score":0.6200000047683716,"display_name":"Industry, innovation and infrastructure"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320309065","display_name":"Analog Devices","ror":"https://ror.org/01545pm61"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W2098498404","https://openalex.org/W2114750911","https://openalex.org/W2126121966","https://openalex.org/W2137066149","https://openalex.org/W2159328621","https://openalex.org/W4241090287","https://openalex.org/W4251109733","https://openalex.org/W4298033106"],"related_works":["https://openalex.org/W2083085379","https://openalex.org/W2011560271","https://openalex.org/W2501578203","https://openalex.org/W2113108952","https://openalex.org/W1968696916","https://openalex.org/W2101780788","https://openalex.org/W4244619933","https://openalex.org/W2286729419","https://openalex.org/W1911718669","https://openalex.org/W3094591202"],"abstract_inverted_index":{"Electrostatic":[0],"discharge":[1,48],"(ESD)":[2,49],"induced":[3],"failures":[4],"continue":[5],"to":[6,43],"be":[7,22],"a":[8,17],"major":[9],"reliability":[10],"concern":[11,18],"in":[12,20],"the":[13,25,31,38,44],"semiconductor":[14],"industry.":[15],"Such":[16],"will":[19],"fact":[21],"intensified":[23],"as":[24],"CMOS":[26],"technology":[27],"is":[28],"scaling":[29],"toward":[30],"22-nm":[32],"and":[33,40],"beyond.":[34],"This":[35],"paper":[36],"covers":[37],"issues":[39],"challenges":[41],"pertinent":[42],"design":[45],"of":[46,52],"electrostatic":[47],"protection":[50],"solutions":[51],"CMOS-based":[53],"RF":[54],"integrated":[55],"circuits.":[56]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-03-20T23:20:44.827607","created_date":"2025-10-10T00:00:00"}