{"id":"https://openalex.org/W2124187017","doi":"https://doi.org/10.1109/apccas.2008.4745960","title":"Measurement on snapback holding voltage of high-voltage LDMOS for latch-up consideration","display_name":"Measurement on snapback holding voltage of high-voltage LDMOS for latch-up consideration","publication_year":2008,"publication_date":"2008-11-01","ids":{"openalex":"https://openalex.org/W2124187017","doi":"https://doi.org/10.1109/apccas.2008.4745960","mag":"2124187017"},"language":"en","primary_location":{"id":"doi:10.1109/apccas.2008.4745960","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apccas.2008.4745960","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101815638","display_name":"Wenyi Chen","orcid":"https://orcid.org/0000-0003-2359-3817"},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Wen-Yi Chen","raw_affiliation_strings":["Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao Tung Univ., Hsinchu"],"affiliations":[{"raw_affiliation_string":"Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao Tung Univ., Hsinchu","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006983052","display_name":"Ming-Dou Ker","orcid":null},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ming-Dou Ker","raw_affiliation_strings":["Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao Tung Univ., Hsinchu"],"affiliations":[{"raw_affiliation_string":"Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]},{"raw_affiliation_string":"Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao Tung Univ., Hsinchu","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076516616","display_name":"Yeh-Jen Huang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210151006","display_name":"Vanguard International Semiconductor (Taiwan)","ror":"https://ror.org/04jmkm342","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210151006"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yeh-Jen Huang","raw_affiliation_strings":["Technology Division, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan","Technol. Div., Vanguard Int. Semicond. Corp., Hsinchu"],"affiliations":[{"raw_affiliation_string":"Technology Division, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210151006"]},{"raw_affiliation_string":"Technol. Div., Vanguard Int. Semicond. Corp., Hsinchu","institution_ids":["https://openalex.org/I4210151006"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060305400","display_name":"Yeh-Ning Jou","orcid":null},"institutions":[{"id":"https://openalex.org/I4210151006","display_name":"Vanguard International Semiconductor (Taiwan)","ror":"https://ror.org/04jmkm342","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210151006"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yeh-Ning Jou","raw_affiliation_strings":["Technology Division, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan","Technol. Div., Vanguard Int. Semicond. Corp., Hsinchu"],"affiliations":[{"raw_affiliation_string":"Technology Division, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210151006"]},{"raw_affiliation_string":"Technol. Div., Vanguard Int. Semicond. Corp., Hsinchu","institution_ids":["https://openalex.org/I4210151006"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5015049808","display_name":"Geeng-Lih Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I4210151006","display_name":"Vanguard International Semiconductor (Taiwan)","ror":"https://ror.org/04jmkm342","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210151006"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Geeng-Lih Lin","raw_affiliation_strings":["Technology Division, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan","Technol. Div., Vanguard Int. Semicond. Corp., Hsinchu"],"affiliations":[{"raw_affiliation_string":"Technology Division, Vanguard International Semiconductor Corporation, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210151006"]},{"raw_affiliation_string":"Technol. Div., Vanguard Int. Semicond. Corp., Hsinchu","institution_ids":["https://openalex.org/I4210151006"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5101815638"],"corresponding_institution_ids":["https://openalex.org/I148366613"],"apc_list":null,"apc_paid":null,"fwci":1.3318,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.8217737,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"61","last_page":"64"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/snapback","display_name":"Snapback","score":0.9985342025756836},{"id":"https://openalex.org/keywords/ldmos","display_name":"LDMOS","score":0.931729793548584},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.6287678480148315},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5390545129776001},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.531568706035614},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5142385363578796},{"id":"https://openalex.org/keywords/safe-operating-area","display_name":"Safe operating area","score":0.46941837668418884},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.4567500352859497},{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.42903101444244385},{"id":"https://openalex.org/keywords/thyristor","display_name":"Thyristor","score":0.42250627279281616},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3898913264274597},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.37065643072128296},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2777059078216553},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.12119689583778381}],"concepts":[{"id":"https://openalex.org/C2779888857","wikidata":"https://www.wikidata.org/wiki/Q18378810","display_name":"Snapback","level":4,"score":0.9985342025756836},{"id":"https://openalex.org/C31672976","wikidata":"https://www.wikidata.org/wiki/Q4042432","display_name":"LDMOS","level":4,"score":0.931729793548584},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6287678480148315},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5390545129776001},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.531568706035614},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5142385363578796},{"id":"https://openalex.org/C186339688","wikidata":"https://www.wikidata.org/wiki/Q233523","display_name":"Safe operating area","level":4,"score":0.46941837668418884},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.4567500352859497},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.42903101444244385},{"id":"https://openalex.org/C121922863","wikidata":"https://www.wikidata.org/wiki/Q180805","display_name":"Thyristor","level":3,"score":0.42250627279281616},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3898913264274597},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.37065643072128296},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2777059078216553},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.12119689583778381},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/apccas.2008.4745960","is_oa":false,"landing_page_url":"https://doi.org/10.1109/apccas.2008.4745960","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.7099999785423279}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1981326002","https://openalex.org/W2014636131","https://openalex.org/W2052553671","https://openalex.org/W2071778906","https://openalex.org/W2108680305","https://openalex.org/W2137893993","https://openalex.org/W2159617085","https://openalex.org/W2165811123","https://openalex.org/W2169412944","https://openalex.org/W4251109733"],"related_works":["https://openalex.org/W2107000020","https://openalex.org/W2075382567","https://openalex.org/W2944851804","https://openalex.org/W2537953064","https://openalex.org/W2115469767","https://openalex.org/W2124187017","https://openalex.org/W2737719579","https://openalex.org/W2169451391","https://openalex.org/W3039098989","https://openalex.org/W2946778896"],"abstract_inverted_index":{"In":[0],"high":[1],"voltage":[2,18,59,96,143],"(HV)":[3],"ICs,":[4],"the":[5,15,20,53,61,81,85,90,98,110,117,125,140],"latch-up":[6,74,82,118],"immunity":[7,63],"of":[8,55,84,97,144],"HV":[9,31,99,145],"devices":[10,146],"is":[11,120,133],"often":[12],"referred":[13],"to":[14,51,60,104,109,138],"TLP-measured":[16,56],"holding":[17,58,95,142],"because":[19],"huge":[21],"power":[22],"generated":[23],"from":[24,68],"DC":[25],"curve":[26,69],"tracer":[27,70],"can":[28],"easily":[29],"damage":[30],"device":[32,62,100],"during":[33],"measurement.":[34],"An":[35],"n-channel":[36],"lateral":[37],"DMOS":[38,48],"(LDMOS)":[39],"was":[40],"fabricated":[41],"in":[42],"a":[43,114,121],"0.25-mum":[44],"18-V":[45,86],"bipolar":[46],"CMOS":[47],"(BCD)":[49],"process":[50],"investigate":[52,139],"validity":[54],"snapback":[57,94,141],"against":[64],"latch-up.":[65,148],"Experimental":[66],"results":[67],"measurement":[71,132],"and":[72],"transient":[73],"test":[75,123],"show":[76],"that":[77],"100-ns":[78],"TLP":[79,92,131],"underestimates":[80],"susceptibility":[83],"LDMOS.":[87],"By":[88],"using":[89],"long-pulse":[91],"measurement,":[93],"has":[101],"been":[102],"found":[103],"degrade":[105],"over":[106],"time":[107,126],"due":[108],"self-heating":[111],"effect.":[112],"As":[113],"result,":[115],"since":[116],"event":[119],"reliability":[122],"with":[124],"duration":[127],"longer":[128],"than":[129],"millisecond,":[130],"not":[134],"suitable":[135],"for":[136,147],"applying":[137]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}