{"id":"https://openalex.org/W3042147947","doi":"https://doi.org/10.1109/africon46755.2019.9134048","title":"Maximum Peak Shifting Phenomenon of Turn-off Voltage Ringing for SiC MOSFET","display_name":"Maximum Peak Shifting Phenomenon of Turn-off Voltage Ringing for SiC MOSFET","publication_year":2019,"publication_date":"2019-09-01","ids":{"openalex":"https://openalex.org/W3042147947","doi":"https://doi.org/10.1109/africon46755.2019.9134048","mag":"3042147947"},"language":"en","primary_location":{"id":"doi:10.1109/africon46755.2019.9134048","is_oa":false,"landing_page_url":"https://doi.org/10.1109/africon46755.2019.9134048","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE AFRICON","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5022799007","display_name":"James Abuogo","orcid":"https://orcid.org/0000-0001-5184-3348"},"institutions":[{"id":"https://openalex.org/I153473198","display_name":"North China Electric Power University","ror":"https://ror.org/04qr5t414","country_code":"CN","type":"education","lineage":["https://openalex.org/I153473198"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"James Abuogo","raw_affiliation_strings":["State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University,Beijing,China","State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University,Beijing,China","institution_ids":["https://openalex.org/I153473198"]},{"raw_affiliation_string":"State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University, Beijing, China","institution_ids":["https://openalex.org/I153473198"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070097017","display_name":"Junji Ke","orcid":"https://orcid.org/0000-0002-4471-1512"},"institutions":[{"id":"https://openalex.org/I153473198","display_name":"North China Electric Power University","ror":"https://ror.org/04qr5t414","country_code":"CN","type":"education","lineage":["https://openalex.org/I153473198"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Junji Ke","raw_affiliation_strings":["State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University,Beijing,China","State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University,Beijing,China","institution_ids":["https://openalex.org/I153473198"]},{"raw_affiliation_string":"State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University, Beijing, China","institution_ids":["https://openalex.org/I153473198"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010670636","display_name":"Zhibin Zhao","orcid":"https://orcid.org/0000-0002-5248-8533"},"institutions":[{"id":"https://openalex.org/I153473198","display_name":"North China Electric Power University","ror":"https://ror.org/04qr5t414","country_code":"CN","type":"education","lineage":["https://openalex.org/I153473198"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhibin Zhao","raw_affiliation_strings":["State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University,Beijing,China","State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University,Beijing,China","institution_ids":["https://openalex.org/I153473198"]},{"raw_affiliation_string":"State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University, Beijing, China","institution_ids":["https://openalex.org/I153473198"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5053813574","display_name":"Zongkui Xie","orcid":null},"institutions":[{"id":"https://openalex.org/I153473198","display_name":"North China Electric Power University","ror":"https://ror.org/04qr5t414","country_code":"CN","type":"education","lineage":["https://openalex.org/I153473198"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zongkui Xie","raw_affiliation_strings":["State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University,Beijing,China","State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University,Beijing,China","institution_ids":["https://openalex.org/I153473198"]},{"raw_affiliation_string":"State Key Laboratory of Alternate Electrical Power Systems with Renewable Energy Sources, North China Electric Power University, Beijing, China","institution_ids":["https://openalex.org/I153473198"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I153473198"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.30965944,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ringing","display_name":"Ringing","score":0.8781641721725464},{"id":"https://openalex.org/keywords/parasitic-element","display_name":"Parasitic element","score":0.7386670112609863},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6988059878349304},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6722947359085083},{"id":"https://openalex.org/keywords/inductance","display_name":"Inductance","score":0.5975503325462341},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.5820333361625671},{"id":"https://openalex.org/keywords/overshoot","display_name":"Overshoot (microwave communication)","score":0.5574500560760498},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.5254401564598083},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4968903362751007},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.47255656123161316},{"id":"https://openalex.org/keywords/voltage-spike","display_name":"Voltage spike","score":0.4701288640499115},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.45738333463668823},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4560127854347229},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.4465672969818115},{"id":"https://openalex.org/keywords/overvoltage","display_name":"Overvoltage","score":0.43895357847213745},{"id":"https://openalex.org/keywords/transient-voltage-suppressor","display_name":"Transient voltage suppressor","score":0.42264053225517273},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.419755756855011},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.3619557023048401},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15284273028373718},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.14342358708381653},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.061219483613967896}],"concepts":[{"id":"https://openalex.org/C30684385","wikidata":"https://www.wikidata.org/wiki/Q176509","display_name":"Ringing","level":3,"score":0.8781641721725464},{"id":"https://openalex.org/C71367568","wikidata":"https://www.wikidata.org/wiki/Q3363655","display_name":"Parasitic element","level":2,"score":0.7386670112609863},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6988059878349304},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6722947359085083},{"id":"https://openalex.org/C29210110","wikidata":"https://www.wikidata.org/wiki/Q177897","display_name":"Inductance","level":3,"score":0.5975503325462341},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.5820333361625671},{"id":"https://openalex.org/C2780323453","wikidata":"https://www.wikidata.org/wiki/Q7113957","display_name":"Overshoot (microwave communication)","level":2,"score":0.5574500560760498},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.5254401564598083},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4968903362751007},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.47255656123161316},{"id":"https://openalex.org/C200980170","wikidata":"https://www.wikidata.org/wiki/Q2025787","display_name":"Voltage spike","level":4,"score":0.4701288640499115},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.45738333463668823},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4560127854347229},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.4465672969818115},{"id":"https://openalex.org/C15703209","wikidata":"https://www.wikidata.org/wiki/Q333883","display_name":"Overvoltage","level":3,"score":0.43895357847213745},{"id":"https://openalex.org/C14915586","wikidata":"https://www.wikidata.org/wiki/Q1653998","display_name":"Transient voltage suppressor","level":3,"score":0.42264053225517273},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.419755756855011},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.3619557023048401},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15284273028373718},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.14342358708381653},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.061219483613967896},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C106131492","wikidata":"https://www.wikidata.org/wiki/Q3072260","display_name":"Filter (signal processing)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/africon46755.2019.9134048","is_oa":false,"landing_page_url":"https://doi.org/10.1109/africon46755.2019.9134048","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE AFRICON","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2472698299","https://openalex.org/W2480920908","https://openalex.org/W2610240164","https://openalex.org/W2612690843"],"related_works":["https://openalex.org/W4385296976","https://openalex.org/W2903128216","https://openalex.org/W2027352624","https://openalex.org/W2099623795","https://openalex.org/W3143448866","https://openalex.org/W3213317019","https://openalex.org/W2200043543","https://openalex.org/W2799082868","https://openalex.org/W3092742941","https://openalex.org/W2098666669"],"abstract_inverted_index":{"This":[0],"paper":[1],"focuses":[2],"on":[3,49],"the":[4,15,106,112],"maximum":[5,107],"peak":[6,76,109],"shifting":[7],"phenomenon":[8,33],"observed":[9],"in":[10],"drain-source":[11],"voltage":[12,50,71,108],"proflle":[13],"during":[14],"turn-off":[16,87],"transient":[17,88],"of":[18,31,40,70,93,102,117],"Silicon":[19],"Carbide":[20],"Metal":[21],"Oxide":[22],"Semiconductor":[23],"Field":[24],"Effect":[25],"Transistor":[26],"(SiC":[27],"MOSFET).":[28],"The":[29,38],"cause":[30],"this":[32],"is":[34,54],"identified":[35],"and":[36,45,52,63,89],"discussed.":[37],"influence":[39],"power":[41,59,98],"loop":[42,60,99],"parasitic":[43,61],"resistance":[44,62],"common":[46,64,94],"source":[47,65,95],"inductance":[48,66,96],"overshoot":[51],"ringing":[53,72],"also":[55],"analyzed.":[56],"Both":[57,101],"large":[58],"lead":[67],"to":[68,97],"damping":[69],"as":[73,75],"well":[74],"growth.":[77],"Peak":[78],"growth":[79],"becomes":[80],"a":[81,90],"concern":[82],"under":[83],"two":[84],"conditions;":[85],"prolonged":[86],"high":[91],"ratio":[92],"inductance.":[100],"these":[103],"can":[104],"make":[105],"grow":[110],"beyond":[111],"safe":[113],"operation":[114],"area":[115],"(SOA)":[116],"SiC":[118],"MOSFET.":[119]},"counts_by_year":[],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}