{"id":"https://openalex.org/W2045637318","doi":"https://doi.org/10.1109/afrcon.2013.6757838","title":"The future of nanoelectronics is black: From silicon to hexagonal carbon","display_name":"The future of nanoelectronics is black: From silicon to hexagonal carbon","publication_year":2013,"publication_date":"2013-09-01","ids":{"openalex":"https://openalex.org/W2045637318","doi":"https://doi.org/10.1109/afrcon.2013.6757838","mag":"2045637318"},"language":"en","primary_location":{"id":"doi:10.1109/afrcon.2013.6757838","is_oa":false,"landing_page_url":"https://doi.org/10.1109/afrcon.2013.6757838","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 Africon","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086461489","display_name":"Udo Schwalke","orcid":null},"institutions":[{"id":"https://openalex.org/I31512782","display_name":"Technical University of Darmstadt","ror":"https://ror.org/05n911h24","country_code":"DE","type":"education","lineage":["https://openalex.org/I31512782"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Udo Schwalke","raw_affiliation_strings":["Institute for Semiconductor Technology and Nanoelectronics, Technische Universit\u00e4t Darmstadt, Darmstadt, Germany","Inst. for Semicond. Technol. & Nanoelectron., Tech. Univ. Darmstadt, Darmstadt, Germany"],"affiliations":[{"raw_affiliation_string":"Institute for Semiconductor Technology and Nanoelectronics, Technische Universit\u00e4t Darmstadt, Darmstadt, Germany","institution_ids":["https://openalex.org/I31512782"]},{"raw_affiliation_string":"Inst. for Semicond. Technol. & Nanoelectron., Tech. Univ. Darmstadt, Darmstadt, Germany","institution_ids":["https://openalex.org/I31512782"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5086461489"],"corresponding_institution_ids":["https://openalex.org/I31512782"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.08824362,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"77","issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10074","display_name":"Carbon Nanotubes in Composites","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanoelectronics","display_name":"Nanoelectronics","score":0.9098721742630005},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.6747097373008728},{"id":"https://openalex.org/keywords/graphene","display_name":"Graphene","score":0.6714783310890198},{"id":"https://openalex.org/keywords/carbon-nanotube","display_name":"Carbon nanotube","score":0.6053669452667236},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.600158154964447},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5983550548553467},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5793971419334412},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5135347843170166},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.4593387842178345},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3337865173816681},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.23327010869979858},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.16457411646842957},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16260313987731934}],"concepts":[{"id":"https://openalex.org/C141400236","wikidata":"https://www.wikidata.org/wiki/Q1479544","display_name":"Nanoelectronics","level":2,"score":0.9098721742630005},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.6747097373008728},{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.6714783310890198},{"id":"https://openalex.org/C513720949","wikidata":"https://www.wikidata.org/wiki/Q1778729","display_name":"Carbon nanotube","level":2,"score":0.6053669452667236},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.600158154964447},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5983550548553467},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5793971419334412},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5135347843170166},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.4593387842178345},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3337865173816681},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23327010869979858},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16457411646842957},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16260313987731934},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/afrcon.2013.6757838","is_oa":false,"landing_page_url":"https://doi.org/10.1109/afrcon.2013.6757838","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 Africon","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","score":0.4399999976158142,"id":"https://metadata.un.org/sdg/9"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320338080","display_name":"European Social Fund","ror":"https://ror.org/00k4n6c32"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":28,"referenced_works":["https://openalex.org/W11476871","https://openalex.org/W1646294624","https://openalex.org/W1901415922","https://openalex.org/W1957541189","https://openalex.org/W1984655370","https://openalex.org/W1989945791","https://openalex.org/W2003171669","https://openalex.org/W2007768539","https://openalex.org/W2025516544","https://openalex.org/W2037448618","https://openalex.org/W2038087218","https://openalex.org/W2058122340","https://openalex.org/W2071508276","https://openalex.org/W2080880982","https://openalex.org/W2082904789","https://openalex.org/W2104317188","https://openalex.org/W2105474064","https://openalex.org/W2108157783","https://openalex.org/W2121990892","https://openalex.org/W2126810113","https://openalex.org/W2138159532","https://openalex.org/W2139694887","https://openalex.org/W2147577254","https://openalex.org/W2164531646","https://openalex.org/W2166521876","https://openalex.org/W3102149558","https://openalex.org/W3102520045","https://openalex.org/W3102942025"],"related_works":["https://openalex.org/W2606452130","https://openalex.org/W2385877031","https://openalex.org/W3149465128","https://openalex.org/W3196929922","https://openalex.org/W2377562106","https://openalex.org/W3103904106","https://openalex.org/W2081887179","https://openalex.org/W4321795992","https://openalex.org/W2328592354","https://openalex.org/W2064884120"],"abstract_inverted_index":{"Silicon":[0],"has":[1],"been":[2],"the":[3,17,92,103,110,126,138],"ultimate":[4],"semiconductor":[5],"material":[6],"in":[7,78,107,142],"micro-":[8],"and":[9,81,123],"nanoelectronics":[10],"for":[11,109],"more":[12],"than":[13],"50":[14],"years.":[15],"However,":[16],"use":[18],"of":[19,94],"pure":[20],"silicon":[21,128],"based":[22],"devices":[23,77],"will":[24,32,132],"come":[25],"to":[26,40,54,59,121],"an":[27],"end":[28],"when":[29],"CMOS":[30],"downscaling":[31],"soon":[33],"reach":[34],"its":[35],"physical":[36],"limits.":[37],"In":[38],"order":[39],"gain":[41],"performance,":[42],"new":[43],"materials":[44],"with":[45],"high":[46,61],"carrier":[47],"mobility":[48],"are":[49,115],"required.":[50],"Hexagonal":[51],"carbon":[52,67,89],"seems":[53],"be":[55,73],"a":[56,99,134],"promising":[57],"alternative":[58],"build":[60],"performance":[62],"electronic":[63],"devices.":[64],"For":[65],"example,":[66],"nanotube":[68],"field-effect":[69],"transistors":[70,114],"(CNTFETs)":[71],"can":[72],"used":[74],"as":[75,82,117],"active":[76],"integrated":[79],"circuits":[80],"memory":[83],"cells.":[84],"More":[85],"recently,":[86],"another":[87],"hexagonal":[88],"modification":[90],"became":[91],"focus":[93],"scientific":[95],"attention:":[96],"graphene.":[97],"Just":[98],"few":[100],"years":[101],"after":[102],"Nobel":[104],"Prize":[105],"Award":[106],"2010":[108],"graphene":[111],"discovery,":[112],"graphene-based":[113],"emerging":[116],"other":[118],"potential":[119],"candidates":[120],"extend":[122],"eventually":[124],"replace":[125],"traditional":[127],"MOSFET.":[129],"This":[130],"contribution":[131],"give":[133],"brief":[135],"overview":[136],"on":[137],"recent":[139],"progress":[140],"achieved":[141],"carbon-based":[143],"nanoelectronics.":[144]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}