{"id":"https://openalex.org/W4414166084","doi":"https://doi.org/10.1109/access.2025.3607964","title":"Abnormal Operation of 6-T SRAM Based on Nanosheet FET Due to Total Ionizing Dose","display_name":"Abnormal Operation of 6-T SRAM Based on Nanosheet FET Due to Total Ionizing Dose","publication_year":2025,"publication_date":"2025-01-01","ids":{"openalex":"https://openalex.org/W4414166084","doi":"https://doi.org/10.1109/access.2025.3607964"},"language":"en","primary_location":{"id":"doi:10.1109/access.2025.3607964","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3607964","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1109/access.2025.3607964","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089228201","display_name":"Jonghyeon Ha","orcid":"https://orcid.org/0000-0001-7830-9321"},"institutions":[{"id":"https://openalex.org/I189442560","display_name":"Gyeongsang National University","ror":"https://ror.org/00saywf64","country_code":"KR","type":"education","lineage":["https://openalex.org/I189442560"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jonghyeon Ha","raw_affiliation_strings":["Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju-si, Republic of Korea","Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0001-7830-9321","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju-si, Republic of Korea","institution_ids":["https://openalex.org/I189442560"]},{"raw_affiliation_string":"Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju, Republic of Korea","institution_ids":["https://openalex.org/I189442560"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051360047","display_name":"Minji Bang","orcid":"https://orcid.org/0009-0005-3198-6743"},"institutions":[{"id":"https://openalex.org/I189442560","display_name":"Gyeongsang National University","ror":"https://ror.org/00saywf64","country_code":"KR","type":"education","lineage":["https://openalex.org/I189442560"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Minji Bang","raw_affiliation_strings":["Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju-si, Republic of Korea","Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju, Republic of Korea"],"raw_orcid":"https://orcid.org/0009-0005-3198-6743","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju-si, Republic of Korea","institution_ids":["https://openalex.org/I189442560"]},{"raw_affiliation_string":"Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju, Republic of Korea","institution_ids":["https://openalex.org/I189442560"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029499561","display_name":"Minki Suh","orcid":"https://orcid.org/0009-0004-9256-4627"},"institutions":[{"id":"https://openalex.org/I189442560","display_name":"Gyeongsang National University","ror":"https://ror.org/00saywf64","country_code":"KR","type":"education","lineage":["https://openalex.org/I189442560"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Minki Suh","raw_affiliation_strings":["Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju-si, Republic of Korea","Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju, Republic of Korea"],"raw_orcid":"https://orcid.org/0009-0004-9256-4627","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju-si, Republic of Korea","institution_ids":["https://openalex.org/I189442560"]},{"raw_affiliation_string":"Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju, Republic of Korea","institution_ids":["https://openalex.org/I189442560"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111085760","display_name":"Dabok Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I189442560","display_name":"Gyeongsang National University","ror":"https://ror.org/00saywf64","country_code":"KR","type":"education","lineage":["https://openalex.org/I189442560"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dabok Lee","raw_affiliation_strings":["Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju-si, Republic of Korea","Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju, Republic of Korea"],"raw_orcid":"https://orcid.org/0009-0000-7408-978X","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju-si, Republic of Korea","institution_ids":["https://openalex.org/I189442560"]},{"raw_affiliation_string":"Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju, Republic of Korea","institution_ids":["https://openalex.org/I189442560"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000971932","display_name":"Minsang Ryu","orcid":"https://orcid.org/0009-0000-5117-210X"},"institutions":[{"id":"https://openalex.org/I189442560","display_name":"Gyeongsang National University","ror":"https://ror.org/00saywf64","country_code":"KR","type":"education","lineage":["https://openalex.org/I189442560"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Minsang Ryu","raw_affiliation_strings":["Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju-si, Republic of Korea","Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju, Republic of Korea"],"raw_orcid":"https://orcid.org/0009-0000-5117-210X","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju-si, Republic of Korea","institution_ids":["https://openalex.org/I189442560"]},{"raw_affiliation_string":"Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju, Republic of Korea","institution_ids":["https://openalex.org/I189442560"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030049476","display_name":"Jin\u2010Woo Han","orcid":"https://orcid.org/0000-0002-5118-1310"},"institutions":[{"id":"https://openalex.org/I1280536761","display_name":"Ames Research Center","ror":"https://ror.org/02acart68","country_code":"US","type":"facility","lineage":["https://openalex.org/I1280536761","https://openalex.org/I4210124779"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jin-Woo Han","raw_affiliation_strings":["Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA, USA"],"raw_orcid":"https://orcid.org/0000-0002-5118-1310","affiliations":[{"raw_affiliation_string":"Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA, USA","institution_ids":["https://openalex.org/I1280536761"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021180754","display_name":"Hyun Chul Sagong","orcid":"https://orcid.org/0009-0003-0236-6698"},"institutions":[{"id":"https://openalex.org/I4210095514","display_name":"Korea Automotive Technology Institute","ror":"https://ror.org/00sc3t321","country_code":"KR","type":"facility","lineage":["https://openalex.org/I4210095514"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyunchul Sagong","raw_affiliation_strings":["Department of Reliability Technology Research and Development, Korea Automotive Technology Institute (KATECH), Cheonan-si, Chungnam, Republic of Korea","Department of Reliability Technology R&D, Korea Automotive Technology Institute(KATECH), Cheonan, Chungnam, Republic of Korea"],"raw_orcid":"https://orcid.org/0009-0003-0236-6698","affiliations":[{"raw_affiliation_string":"Department of Reliability Technology Research and Development, Korea Automotive Technology Institute (KATECH), Cheonan-si, Chungnam, Republic of Korea","institution_ids":["https://openalex.org/I4210095514"]},{"raw_affiliation_string":"Department of Reliability Technology R&D, Korea Automotive Technology Institute(KATECH), Cheonan, Chungnam, Republic of Korea","institution_ids":["https://openalex.org/I4210095514"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100627580","display_name":"Hojoon Lee","orcid":"https://orcid.org/0000-0003-3031-0715"},"institutions":[{"id":"https://openalex.org/I4210095514","display_name":"Korea Automotive Technology Institute","ror":"https://ror.org/00sc3t321","country_code":"KR","type":"facility","lineage":["https://openalex.org/I4210095514"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hojoon Lee","raw_affiliation_strings":["Department of Reliability Technology Research and Development, Korea Automotive Technology Institute (KATECH), Cheonan-si, Chungnam, Republic of Korea","Department of Reliability Technology R&D, Korea Automotive Technology Institute(KATECH), Cheonan, Chungnam, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0003-3031-0715","affiliations":[{"raw_affiliation_string":"Department of Reliability Technology Research and Development, Korea Automotive Technology Institute (KATECH), Cheonan-si, Chungnam, Republic of Korea","institution_ids":["https://openalex.org/I4210095514"]},{"raw_affiliation_string":"Department of Reliability Technology R&D, Korea Automotive Technology Institute(KATECH), Cheonan, Chungnam, Republic of Korea","institution_ids":["https://openalex.org/I4210095514"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037911372","display_name":"Jungsik Kim","orcid":"https://orcid.org/0000-0001-7798-3381"},"institutions":[{"id":"https://openalex.org/I189442560","display_name":"Gyeongsang National University","ror":"https://ror.org/00saywf64","country_code":"KR","type":"education","lineage":["https://openalex.org/I189442560"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jungsik Kim","raw_affiliation_strings":["Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju-si, Republic of Korea","Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0001-7798-3381","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju-si, Republic of Korea","institution_ids":["https://openalex.org/I189442560"]},{"raw_affiliation_string":"Department of Electrical Engineering, Gyeongsang National University (GNU), Jinju, Republic of Korea","institution_ids":["https://openalex.org/I189442560"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2075,"currency":"USD","value_usd":2075},"apc_paid":{"value":2075,"currency":"USD","value_usd":2075},"fwci":0.5779,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.64901165,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":97},"biblio":{"volume":"13","issue":null,"first_page":"159639","last_page":"159648"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nanosheet","display_name":"Nanosheet","score":0.6855000257492065},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.5796999931335449},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5648000240325928},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5095000267028809},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.4997999966144562},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.4325999915599823},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.42579999566078186},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.41040000319480896},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.39910000562667847}],"concepts":[{"id":"https://openalex.org/C51967427","wikidata":"https://www.wikidata.org/wiki/Q17148232","display_name":"Nanosheet","level":2,"score":0.6855000257492065},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6629999876022339},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.5796999931335449},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5648000240325928},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5613999962806702},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5095000267028809},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4997999966144562},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.4325999915599823},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.42579999566078186},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.41260001063346863},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.412200003862381},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.41040000319480896},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.39910000562667847},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.3456999957561493},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3427000045776367},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.33219999074935913},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.33090001344680786},{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.2976999878883362},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.2919999957084656},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.28769999742507935},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.2727000117301941},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.27239999175071716},{"id":"https://openalex.org/C90806461","wikidata":"https://www.wikidata.org/wiki/Q1144416","display_name":"Propagation delay","level":2,"score":0.2685000002384186},{"id":"https://openalex.org/C179499742","wikidata":"https://www.wikidata.org/wiki/Q1324892","display_name":"Noise margin","level":4,"score":0.26750001311302185},{"id":"https://openalex.org/C199822604","wikidata":"https://www.wikidata.org/wiki/Q557120","display_name":"Duty cycle","level":3,"score":0.26579999923706055},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.2605000138282776},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.2563999891281128}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2025.3607964","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3607964","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:da5f4d5aba854114b690d21491035060","is_oa":true,"landing_page_url":"https://doaj.org/article/da5f4d5aba854114b690d21491035060","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 13, Pp 159639-159648 (2025)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2025.3607964","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3607964","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G2179355843","display_name":null,"funder_award_id":"RS\u20102024\u221200398425","funder_id":"https://openalex.org/F4320335199","funder_display_name":"Korea Institute of Energy Technology Evaluation and Planning"},{"id":"https://openalex.org/G3677464216","display_name":null,"funder_award_id":"RS-2023-00272892","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G735580661","display_name":null,"funder_award_id":"RS-2025-02315930","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"}],"funders":[{"id":"https://openalex.org/F4320328359","display_name":"Ministry of Science and ICT, South Korea","ror":"https://ror.org/01wpjm123"},{"id":"https://openalex.org/F4320335199","display_name":"Korea Institute of Energy Technology Evaluation and Planning","ror":"https://ror.org/02zq38y32"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":32,"referenced_works":["https://openalex.org/W1975274443","https://openalex.org/W1985805253","https://openalex.org/W2005688043","https://openalex.org/W2014761329","https://openalex.org/W2085559938","https://openalex.org/W2107901680","https://openalex.org/W2141449756","https://openalex.org/W2144970115","https://openalex.org/W2148071019","https://openalex.org/W2161549238","https://openalex.org/W2328899558","https://openalex.org/W2467652741","https://openalex.org/W2489619372","https://openalex.org/W2611605980","https://openalex.org/W2744406216","https://openalex.org/W2780870700","https://openalex.org/W2782293701","https://openalex.org/W2809706795","https://openalex.org/W2898167007","https://openalex.org/W2915257715","https://openalex.org/W3081528702","https://openalex.org/W3088667213","https://openalex.org/W3126418592","https://openalex.org/W3141071607","https://openalex.org/W3157131883","https://openalex.org/W3159581096","https://openalex.org/W4226024093","https://openalex.org/W4386432209","https://openalex.org/W4390421951","https://openalex.org/W4391406934","https://openalex.org/W4402449720","https://openalex.org/W4407938086"],"related_works":[],"abstract_inverted_index":{"This":[0],"study":[1],"investigates":[2],"the":[3,10,35,49,56,59,71,85,89,98,105,111,115,118,129,133,150,156,167,171,186,191,220,223,229,264,280,284,291],"total":[4],"ionizing":[5],"dose":[6],"(TID)":[7],"effect":[8,26],"on":[9,219],"six-transistor":[11],"static":[12,40],"random":[13],"access":[14],"memory":[15],"(6-T":[16],"SRAM)":[17],"consisting":[18],"of":[19,88,128,155,185,193,222,283,286],"a":[20,23,125,207],"novel":[21],"device,":[22],"nanosheet":[24],"field":[25],"transistor":[27],"(NSFET).":[28],"Via":[29],"technology":[30],"computer-aided":[31],"design,":[32],"we":[33,205],"simulate":[34],"hold,":[36],"read,":[37,249],"and":[38,45,61,66,140,146,251,273],"write":[39,141,162],"noise":[41],"margin":[42],"(HSNM,":[43],"RSNM,":[44],"WSNM)":[46],"degradations":[47],"by":[48,178,239],"oxide":[50,72,106,194,217,240,287],"trap,":[51],"using":[52],"stationary":[53,57],"simulation.":[54],"In":[55,114],"simulation,":[58],"HSNM":[60],"RSNM":[62],"decrease":[63],"about":[64],"75%":[65],"bit":[67,126],"flip":[68,127],"occurs":[69],"under":[70,138,182,269],"trap":[73,107,195,241,288],"conditions,":[74,277],"respectively.":[75],"The":[76,93],"voltage":[77,136,168],"stored":[78],"at":[79,121,170],"the$V_{CH}$($V_{CL}$)":[80],"node":[81,135,176],"reduces":[82],"owing":[83],"to":[84,104,161,244],"leakage":[86,119],"current":[87,120],"pull-down":[90],"(PD)":[91],"transistors.":[92],"detail":[94],"degradation":[95,200],"mechanism":[96],"for":[97],"SRAM":[99,226],"operation":[100,184,271],"(hold/read/write)":[101],"problems":[102],"due":[103],"is":[108,180],"confirmed":[109,262],"through":[110,255],"time-dependent":[112,256],"simulations.":[113],"read":[116],"operations,":[117],"PD":[122],"transistors":[123],"causes":[124],"CH":[130,134,175],"node.":[131],"Moreover,":[132],"decreases":[137],"hold":[139,183,252],"operations":[142],"($\\Delta":[143],"V_{CH}":[144],"=15.7$%":[145],"14%).":[147],"Significantly,":[148],"when":[149],"adjacent":[151,274],"cell":[152,158,173,275],"(word-line":[153],"(WL)2)":[154],"target":[157,172,187],"(WL1)":[159,174],"operates":[160],"data":[163],"($V_{BL}$down":[164],"from$V_{DD}$to":[165],"0),":[166],"drop":[169],"(decreased":[177],"23.3%)":[179],"enhanced":[181],"cell.":[188],"To":[189],"mitigate":[190],"effects":[192,285],"that":[196,213,234,263],"cause":[197],"electrical":[198,257],"characteristic":[199,258],"in":[201,236,290],"NSFET":[202],"6-T":[203],"SRAM,":[204],"applied":[206],"partial":[208],"dielectric":[209],"isolation":[210,294],"(PDI)":[211],"structure":[212],"locally":[214],"deposits":[215],"an":[216],"(SiO2)":[218],"bottom":[221],"source/drain":[224],"(S/D).":[225],"cells":[227],"incorporating":[228],"proposed":[230],"PDI":[231],"technique":[232],"demonstrated":[233],"variations":[235],"SNM":[237],"caused":[238],"were":[242],"suppressed":[243],"less":[245],"than":[246],"1%":[247,268],"across":[248],"write,":[250],"operations.":[253],"Additionally,":[254],"analysis,":[259],"it":[260],"was":[261],"potential":[265],"changes":[266],"in$V_{ch}$and$V_{cl}$converge":[267],"various":[270],"modes":[272],"activation":[276],"thereby":[278],"demonstrating":[279],"effective":[281],"blocking":[282],"occurring":[289],"shallow":[292],"trench":[293],"(STI)":[295],"region.":[296]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1}],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2025-10-10T00:00:00"}