{"id":"https://openalex.org/W4414054140","doi":"https://doi.org/10.1109/access.2025.3607430","title":"Analysis of Group III-V Material-Based Symmetric High-k Spacer on S/D Underlap Junctionless Nanotube FET Considering for Cutting Edge Technology","display_name":"Analysis of Group III-V Material-Based Symmetric High-k Spacer on S/D Underlap Junctionless Nanotube FET Considering for Cutting Edge Technology","publication_year":2025,"publication_date":"2025-01-01","ids":{"openalex":"https://openalex.org/W4414054140","doi":"https://doi.org/10.1109/access.2025.3607430"},"language":"en","primary_location":{"id":"doi:10.1109/access.2025.3607430","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3607430","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1109/access.2025.3607430","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101438570","display_name":"Neha Gupta","orcid":"https://orcid.org/0000-0003-3945-0968"},"institutions":[{"id":"https://openalex.org/I4210086089","display_name":"JRE Group of Institutions","ror":"https://ror.org/00gyygy85","country_code":"IN","type":"education","lineage":["https://openalex.org/I4210086089"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Neha Gupta","raw_affiliation_strings":["Greater Noida Institute of Technology, GNIOT Group of Institutions, Greater Noida, India","Greater Noida Institute of Technology, GNIOT Group of Institutions, Knowledge Park II, Greater Noida, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Greater Noida Institute of Technology, GNIOT Group of Institutions, Greater Noida, India","institution_ids":["https://openalex.org/I4210086089"]},{"raw_affiliation_string":"Greater Noida Institute of Technology, GNIOT Group of Institutions, Knowledge Park II, Greater Noida, India","institution_ids":["https://openalex.org/I4210086089"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090635177","display_name":"Ajay Kumar","orcid":"https://orcid.org/0000-0001-8043-8253"},"institutions":[{"id":"https://openalex.org/I154970844","display_name":"Jaypee Institute of Information Technology","ror":"https://ror.org/05sttyy11","country_code":"IN","type":"education","lineage":["https://openalex.org/I154970844"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ajay Kumar","raw_affiliation_strings":["Department of Electronics and Communication Engineering, Jaypee Institute of Information Technology, Noida, India"],"raw_orcid":"https://orcid.org/0000-0001-8043-8253","affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, Jaypee Institute of Information Technology, Noida, India","institution_ids":["https://openalex.org/I154970844"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032151445","display_name":"Aditya Jain","orcid":"https://orcid.org/0000-0003-2509-4608"},"institutions":[{"id":"https://openalex.org/I244572783","display_name":"Symbiosis International University","ror":"https://ror.org/005r2ww51","country_code":"IN","type":"education","lineage":["https://openalex.org/I244572783"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Aditya Jain","raw_affiliation_strings":["Department of ECE, Symbiosis Institute of Technology, Symbiosis International University, Pune, India"],"raw_orcid":"https://orcid.org/0000-0003-2509-4608","affiliations":[{"raw_affiliation_string":"Department of ECE, Symbiosis Institute of Technology, Symbiosis International University, Pune, India","institution_ids":["https://openalex.org/I244572783"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048755047","display_name":"Raj Kumar Gupta","orcid":"https://orcid.org/0000-0001-5755-1143"},"institutions":[{"id":"https://openalex.org/I5847235","display_name":"University of Petroleum and Energy Studies","ror":"https://ror.org/04q2jes40","country_code":"IN","type":"education","lineage":["https://openalex.org/I5847235"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Rajeev Gupta","raw_affiliation_strings":["Department of Physics, College of Engineering Studies, UPES, Dehradun, Uttarakhand, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, College of Engineering Studies, UPES, Dehradun, Uttarakhand, India","institution_ids":["https://openalex.org/I5847235"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5045106534","display_name":"A. Goyal","orcid":"https://orcid.org/0000-0003-2403-5323"},"institutions":[{"id":"https://openalex.org/I164861460","display_name":"Manipal Academy of Higher Education","ror":"https://ror.org/02xzytt36","country_code":"IN","type":"education","lineage":["https://openalex.org/I164861460"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Amit Kumar Goyal","raw_affiliation_strings":["Department of Electronics and Communication Engineering, Manipal Institute of Technology (MIT), Manipal Academy of Higher Education, Manipal, India"],"raw_orcid":"https://orcid.org/0000-0003-2403-5323","affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, Manipal Institute of Technology (MIT), Manipal Academy of Higher Education, Manipal, India","institution_ids":["https://openalex.org/I164861460"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.4626,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.672692,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":97},"biblio":{"volume":"13","issue":null,"first_page":"157137","last_page":"157146"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9944000244140625,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.633899986743927},{"id":"https://openalex.org/keywords/nanotube","display_name":"Nanotube","score":0.6182000041007996},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.5889000296592712},{"id":"https://openalex.org/keywords/linearity","display_name":"Linearity","score":0.5806000232696533},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.5504999756813049},{"id":"https://openalex.org/keywords/enhanced-data-rates-for-gsm-evolution","display_name":"Enhanced Data Rates for GSM Evolution","score":0.4918999969959259},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.46219998598098755},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4221000075340271}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8300999999046326},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6812000274658203},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.633899986743927},{"id":"https://openalex.org/C2777619693","wikidata":"https://www.wikidata.org/wiki/Q539430","display_name":"Nanotube","level":3,"score":0.6182000041007996},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5889000296592712},{"id":"https://openalex.org/C77170095","wikidata":"https://www.wikidata.org/wiki/Q1753188","display_name":"Linearity","level":2,"score":0.5806000232696533},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5504999756813049},{"id":"https://openalex.org/C162307627","wikidata":"https://www.wikidata.org/wiki/Q204833","display_name":"Enhanced Data Rates for GSM Evolution","level":2,"score":0.4918999969959259},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.46219998598098755},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4221000075340271},{"id":"https://openalex.org/C513720949","wikidata":"https://www.wikidata.org/wiki/Q1778729","display_name":"Carbon nanotube","level":2,"score":0.39800000190734863},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.39329999685287476},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3677000105381012},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.335999995470047},{"id":"https://openalex.org/C110023515","wikidata":"https://www.wikidata.org/wiki/Q1197777","display_name":"Intrinsic semiconductor","level":3,"score":0.33570000529289246},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.32199999690055847},{"id":"https://openalex.org/C123671423","wikidata":"https://www.wikidata.org/wiki/Q332329","display_name":"Contact resistance","level":3,"score":0.30480000376701355},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.2992999851703644},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.2808000147342682},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.2784000039100647},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.26669999957084656},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.2599000036716461},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.25600001215934753},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2549000084400177},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.2508000135421753}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2025.3607430","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3607430","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:e2f249b27ec1427aa46ebaa5f0c97675","is_oa":true,"landing_page_url":"https://doaj.org/article/e2f249b27ec1427aa46ebaa5f0c97675","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 13, Pp 157137-157146 (2025)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2025.3607430","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3607430","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":34,"referenced_works":["https://openalex.org/W1062655267","https://openalex.org/W1997783128","https://openalex.org/W2004012148","https://openalex.org/W2049134132","https://openalex.org/W2075247018","https://openalex.org/W2103244891","https://openalex.org/W2119378720","https://openalex.org/W2141065108","https://openalex.org/W2152274223","https://openalex.org/W2163761774","https://openalex.org/W2219961516","https://openalex.org/W2283775418","https://openalex.org/W2292180369","https://openalex.org/W2314113208","https://openalex.org/W2329735910","https://openalex.org/W2778426620","https://openalex.org/W2900673441","https://openalex.org/W2902221932","https://openalex.org/W2905683525","https://openalex.org/W2991991169","https://openalex.org/W3110406337","https://openalex.org/W3120579256","https://openalex.org/W3168766828","https://openalex.org/W3200293155","https://openalex.org/W4200294704","https://openalex.org/W4313224738","https://openalex.org/W4375929053","https://openalex.org/W4376286434","https://openalex.org/W4378676464","https://openalex.org/W4385471059","https://openalex.org/W4388540456","https://openalex.org/W4389719966","https://openalex.org/W4405754342","https://openalex.org/W4408405128"],"related_works":["https://openalex.org/W2030244394","https://openalex.org/W1576739978","https://openalex.org/W1987434213","https://openalex.org/W2985840163","https://openalex.org/W2120609629","https://openalex.org/W1983849759","https://openalex.org/W2739992384","https://openalex.org/W2065626222","https://openalex.org/W1982847193","https://openalex.org/W2183598138"],"abstract_inverted_index":{"The":[0,56,123,204],"usage":[1],"of":[2,29,98,102,109,114,167],"III-V":[3,66],"group":[4,65],"semiconductors":[5,67],"has":[6,43,92,140,152],"increased":[7],"drastically":[8],"in":[9,112,165],"the":[10,25,30,51,59,64,96,100,130,160,186,219,233],"last":[11],"few":[12],"years,":[13],"owing":[14],"to":[15],"their":[16],"superior":[17,163],"characteristics":[18,143],"that":[19,136,155],"can":[20],"be":[21],"tailored":[22],"by":[23,62],"adjusting":[24],"composition":[26],"and":[27,80,85,117,176,211],"structure":[28],"materials.":[31],"In":[32],"this":[33],"paper,":[34],"a":[35,47,69,89,106,147,192,214],"junctionless":[36,148],"GAA":[37],"(gate":[38],"all":[39],"around)":[40],"nanotube":[41],"FET":[42],"been":[44,93,153],"studied":[45],"with":[46,95,129,156],"high-k":[48],"spacer":[49],"on":[50,232],"S/D":[52],"(Source/Drain)":[53],"underlap":[54],"region.":[55],"paper":[57],"examines":[58],"device":[60,161,190],"performance":[61,164],"incorporating":[63],"as":[68,73,83],"channel":[70,138,158,188,228],"material,":[71,159],"such":[72,82],"GaAs":[74,205],"(Gallium":[75,78],"Arsenide),":[76],"GaN":[77,157],"Nitride),":[79],"alloys":[81],"InGaAs":[84,187],"SiGe.":[86],"For":[87],"this,":[88],"comprehensive":[90],"analysis":[91,221],"done":[94],"aim":[97],"finding":[99],"efficacy":[101],"these":[103],"materials":[104],"for":[105,182,201],"wide":[107],"range":[108],"applications,":[110],"mainly":[111],"terms":[113,166],"analog,":[115],"static,":[116],"RF":[118],"(Radio":[119],"Frequency)":[120],"linearity":[121],"metrics.":[122],"results":[124],"obtained":[125],"are":[126],"simultaneously":[127],"compared":[128],"silicon":[131],"material.":[132],"It":[133,151],"is":[134],"observed":[135],"each":[137],"material":[139,189,229],"its":[141],"own":[142],"when":[144],"amalgamated":[145],"onto":[146],"Nanotube":[149],"FET.":[150],"found":[154],"exhibits":[162],"high":[168,215],"current":[169],"driving":[170],"capability":[171],"(\u223c":[172],"1.6\u03bcA),":[173],"improved":[174],"transconductance,":[175],"higher":[177],"derivative,":[178],"making":[179,198],"it":[180,199],"suitable":[181,200],"linear":[183],"amplifiers.":[184],"Further,":[185],"shows":[191],"low":[193,208],"threshold":[194],"voltage":[195],"(below":[196],"0.1V),":[197],"low-power":[202],"applications.":[203,235],"achieves":[206],"very":[207],"SS":[209],"(18mV/decade),":[210],"thereby":[212],"possesses":[213],"switching":[216],"ratio.":[217],"Thus,":[218],"proposed":[220],"provides":[222],"an":[223],"in-depth":[224],"insight":[225],"into":[226],"choosing":[227],"wisely":[230],"based":[231],"required":[234]},"counts_by_year":[{"year":2026,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}