{"id":"https://openalex.org/W4413967035","doi":"https://doi.org/10.1109/access.2025.3605829","title":"Analysis of Bias Temperature Instability in Peripheral CMOS Devices for Low-Temperature Memory Applications","display_name":"Analysis of Bias Temperature Instability in Peripheral CMOS Devices for Low-Temperature Memory Applications","publication_year":2025,"publication_date":"2025-01-01","ids":{"openalex":"https://openalex.org/W4413967035","doi":"https://doi.org/10.1109/access.2025.3605829"},"language":"en","primary_location":{"id":"doi:10.1109/access.2025.3605829","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3605829","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1109/access.2025.3605829","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103190709","display_name":"Jung Rae Cho","orcid":"https://orcid.org/0009-0002-6752-6122"},"institutions":[{"id":"https://openalex.org/I110273157","display_name":"Kookmin University","ror":"https://ror.org/0049erg63","country_code":"KR","type":"education","lineage":["https://openalex.org/I110273157"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jung Rae Cho","raw_affiliation_strings":["School of Electrical Engineering, Kookmin University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0009-0002-6752-6122","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Kookmin University, Seoul, South Korea","institution_ids":["https://openalex.org/I110273157"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067362607","display_name":"Seungwon Go","orcid":"https://orcid.org/0000-0003-3679-6381"},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seungwon Go","raw_affiliation_strings":["Department of Electronic Engineering, Sogang University, Seoul, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0003-3679-6381","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Sogang University, Seoul, Republic of Korea","institution_ids":["https://openalex.org/I148751991"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080090397","display_name":"Jingyu Park","orcid":"https://orcid.org/0009-0001-1687-2167"},"institutions":[{"id":"https://openalex.org/I110273157","display_name":"Kookmin University","ror":"https://ror.org/0049erg63","country_code":"KR","type":"education","lineage":["https://openalex.org/I110273157"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jingyu Park","raw_affiliation_strings":["School of Electrical Engineering, Kookmin University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Kookmin University, Seoul, South Korea","institution_ids":["https://openalex.org/I110273157"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081820142","display_name":"Tae Jun Yang","orcid":"https://orcid.org/0000-0002-7140-9538"},"institutions":[{"id":"https://openalex.org/I110273157","display_name":"Kookmin University","ror":"https://ror.org/0049erg63","country_code":"KR","type":"education","lineage":["https://openalex.org/I110273157"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Tae Jun Yang","raw_affiliation_strings":["School of Electrical Engineering, Kookmin University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-7140-9538","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Kookmin University, Seoul, South Korea","institution_ids":["https://openalex.org/I110273157"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052196551","display_name":"Seonhaeng Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seonhaeng Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Ltd., Hwaseong, South Korea","Memory Division, Samsung Electronics Company Ltd, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Ltd., Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Ltd, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049480982","display_name":"Namhyun Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Namhyun Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Ltd., Hwaseong, South Korea","Memory Division, Samsung Electronics Company Ltd, Hwaseong, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Ltd., Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Ltd, Hwaseong, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078239419","display_name":"Dong Keun Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dong Keun Lee","raw_affiliation_strings":["Department of Electronic Engineering, Sogang University, Seoul, Republic of Korea"],"raw_orcid":"https://orcid.org/0009-0004-7872-5834","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Sogang University, Seoul, Republic of Korea","institution_ids":["https://openalex.org/I148751991"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100693798","display_name":"Yoon Kim","orcid":"https://orcid.org/0000-0002-4837-8411"},"institutions":[{"id":"https://openalex.org/I124633538","display_name":"University of Seoul","ror":"https://ror.org/05en5nh73","country_code":"KR","type":"education","lineage":["https://openalex.org/I124633538"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yoon Kim","raw_affiliation_strings":["School of Electrical and Computer Engineering, University of Seoul, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-4837-8411","affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, University of Seoul, Seoul, South Korea","institution_ids":["https://openalex.org/I124633538"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000312879","display_name":"Myounggon Kang","orcid":"https://orcid.org/0000-0003-4132-0038"},"institutions":[{"id":"https://openalex.org/I124633538","display_name":"University of Seoul","ror":"https://ror.org/05en5nh73","country_code":"KR","type":"education","lineage":["https://openalex.org/I124633538"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Myounggon Kang","raw_affiliation_strings":["School of Advanced Fusion Studies, University of Seoul, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-4132-0038","affiliations":[{"raw_affiliation_string":"School of Advanced Fusion Studies, University of Seoul, Seoul, South Korea","institution_ids":["https://openalex.org/I124633538"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056156000","display_name":"Rock\u2010Hyun Baek","orcid":"https://orcid.org/0000-0002-6175-8101"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Rock-Hyun Baek","raw_affiliation_strings":["Pohang University of Science and Technology (POSTECH), Pohang, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-6175-8101","affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology (POSTECH), Pohang, South Korea","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100600388","display_name":"Changhyun Kim","orcid":"https://orcid.org/0000-0001-8649-2584"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Changhyun Kim","raw_affiliation_strings":["Pohang University of Science and Technology (POSTECH), Pohang, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology (POSTECH), Pohang, South Korea","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063522085","display_name":"Sangwan Kim","orcid":"https://orcid.org/0000-0002-6492-7740"},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangwan Kim","raw_affiliation_strings":["Department of Electronic Engineering, Sogang University, Seoul, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0002-6492-7740","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Sogang University, Seoul, Republic of Korea","institution_ids":["https://openalex.org/I148751991"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100741055","display_name":"Dae Hwan Kim","orcid":"https://orcid.org/0000-0003-2567-4012"},"institutions":[{"id":"https://openalex.org/I110273157","display_name":"Kookmin University","ror":"https://ror.org/0049erg63","country_code":"KR","type":"education","lineage":["https://openalex.org/I110273157"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dae Hwan Kim","raw_affiliation_strings":["School of Electrical Engineering, Kookmin University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-2567-4012","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Kookmin University, Seoul, South Korea","institution_ids":["https://openalex.org/I110273157"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":13,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.1934148,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"13","issue":null,"first_page":"156497","last_page":"156503"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9850000143051147,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6406735777854919},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5056447982788086},{"id":"https://openalex.org/keywords/temperature-measurement","display_name":"Temperature measurement","score":0.503562867641449},{"id":"https://openalex.org/keywords/instability","display_name":"Instability","score":0.486371785402298},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.48246437311172485},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.45282799005508423},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.4421968162059784},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3631739020347595},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.29515135288238525},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.15289822220802307},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.14876723289489746},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1485080122947693},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.14165621995925903},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.09867915511131287},{"id":"https://openalex.org/keywords/mechanics","display_name":"Mechanics","score":0.09618911147117615}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6406735777854919},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5056447982788086},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.503562867641449},{"id":"https://openalex.org/C207821765","wikidata":"https://www.wikidata.org/wiki/Q405372","display_name":"Instability","level":2,"score":0.486371785402298},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48246437311172485},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.45282799005508423},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.4421968162059784},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3631739020347595},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.29515135288238525},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15289822220802307},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14876723289489746},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1485080122947693},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.14165621995925903},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09867915511131287},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.09618911147117615},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2025.3605829","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3605829","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:da7d2eedb57845bb8b6cc27d3ec56ff1","is_oa":true,"landing_page_url":"https://doaj.org/article/da7d2eedb57845bb8b6cc27d3ec56ff1","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 13, Pp 156497-156503 (2025)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2025.3605829","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3605829","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G1735960320","display_name":null,"funder_award_id":"Grant RS-2023-00208661","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G6229276581","display_name":null,"funder_award_id":"IITP-2025-RS-2023-00260091","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G7696438733","display_name":null,"funder_award_id":"Grant NRF-2022R1A2C2092727","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"}],"funders":[{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320328359","display_name":"Ministry of Science and ICT, South Korea","ror":"https://ror.org/01wpjm123"},{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":40,"referenced_works":["https://openalex.org/W2004889297","https://openalex.org/W2028420621","https://openalex.org/W2039555123","https://openalex.org/W2041424982","https://openalex.org/W2057716849","https://openalex.org/W2115044607","https://openalex.org/W2167637317","https://openalex.org/W2275322877","https://openalex.org/W2524462216","https://openalex.org/W2762128195","https://openalex.org/W2764227578","https://openalex.org/W2805323336","https://openalex.org/W2943359920","https://openalex.org/W2964509724","https://openalex.org/W2983214264","https://openalex.org/W2996946661","https://openalex.org/W3019381406","https://openalex.org/W3030454559","https://openalex.org/W3031894344","https://openalex.org/W3159287959","https://openalex.org/W3162708822","https://openalex.org/W3208629838","https://openalex.org/W3208657846","https://openalex.org/W3210130470","https://openalex.org/W4200367655","https://openalex.org/W4225303553","https://openalex.org/W4229011206","https://openalex.org/W4313455362","https://openalex.org/W4376955905","https://openalex.org/W4379033988","https://openalex.org/W4385061607","https://openalex.org/W4386261661","https://openalex.org/W4388208042","https://openalex.org/W4393257351","https://openalex.org/W4407827590","https://openalex.org/W4407897213","https://openalex.org/W4408145720","https://openalex.org/W4408323894","https://openalex.org/W4410226697","https://openalex.org/W4410394769"],"related_works":["https://openalex.org/W3014521742","https://openalex.org/W2374313965","https://openalex.org/W2157278395","https://openalex.org/W2022300913","https://openalex.org/W2617868873","https://openalex.org/W3204141294","https://openalex.org/W1570780624","https://openalex.org/W4386230336","https://openalex.org/W14400985","https://openalex.org/W2322569264"],"abstract_inverted_index":{"In":[0],"this":[1],"study,":[2],"the":[3,29,42,45,55,61,64,74,81,94,101,126],"bias":[4],"temperature":[5,82],"instability":[6],"(BTI)":[7],"of":[8,60,93,124],"peripheral":[9],"complementary":[10],"metal\u2012oxide":[11],"semiconductor":[12],"devices":[13],"in":[14,28,41,73],"a":[15],"cell-on-peri":[16],"(COP)":[17],"structure":[18],"is":[19,31,51,97,105],"investigated":[20],"under":[21],"cryogenic":[22],"conditions.":[23],"First,":[24],"positive":[25],"BTI":[26,39],"(PBTI)":[27],"nMOSFET":[30,95,127],"found":[32],"to":[33,54,86,107,132],"be":[34],"more":[35],"severe":[36],"than":[37],"negative":[38],"(NBTI)":[40],"pMOSFET,":[43],"despite":[44],"same":[46],"overdrive":[47],"voltage.":[48],"This":[49,88],"behavior":[50],"primarily":[52],"attributed":[53,106],"shorter":[56],"carrier":[57],"capture/emission":[58],"time":[59],"nMOSFET.":[62],"Second,":[63],"threshold":[65],"voltage":[66],"shift":[67],"(\u0394<italic":[68],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[69,71],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">V</i><sub":[70],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">th</sub>)":[72],"pMOSFET":[75],"caused":[76],"by":[77],"NBTI":[78],"increases":[79],"as":[80],"decreases":[83],"from":[84,91,116],"300K":[85],"77K.":[87],"trend":[89],"differs":[90],"that":[92],"and":[96,112],"reported":[98],"here":[99],"for":[100],"first":[102],"time.":[103],"It":[104],"increased":[108],"Fowler\u2013Nordheim":[109],"(FN)":[110],"tunneling":[111],"impact":[113],"ionization,":[114],"resulting":[115],"suppressed":[117],"phonon":[118],"scattering":[119],"at":[120],"low":[121],"temperatures.":[122],"Last":[123],"all,":[125],"exhibits":[128],"hump":[129],"characteristics":[130],"due":[131],"PBTI.":[133]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}