{"id":"https://openalex.org/W4413154927","doi":"https://doi.org/10.1109/access.2025.3598275","title":"An Improved SiC MOSFET With Integrated Schottky Contact Super Barrier Rectifier","display_name":"An Improved SiC MOSFET With Integrated Schottky Contact Super Barrier Rectifier","publication_year":2025,"publication_date":"2025-01-01","ids":{"openalex":"https://openalex.org/W4413154927","doi":"https://doi.org/10.1109/access.2025.3598275"},"language":"en","primary_location":{"id":"doi:10.1109/access.2025.3598275","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3598275","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1109/access.2025.3598275","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5089278783","display_name":"Xintian Zhou","orcid":null},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xintian Zhou","raw_affiliation_strings":["School of Information Science and Technology, Beijing University of Technology, Beijing, China"],"raw_orcid":"https://orcid.org/0000-0001-9926-947X","affiliations":[{"raw_affiliation_string":"School of Information Science and Technology, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100514010","display_name":"Jinglong Yan","orcid":null},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jinglong Yan","raw_affiliation_strings":["School of Information Science and Technology, Beijing University of Technology, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Information Science and Technology, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086149568","display_name":"Yun Tang","orcid":"https://orcid.org/0000-0001-8709-297X"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yun Tang","raw_affiliation_strings":["School of Information Science and Technology, Beijing University of Technology, Beijing, China"],"raw_orcid":"https://orcid.org/0000-0001-8709-297X","affiliations":[{"raw_affiliation_string":"School of Information Science and Technology, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028423721","display_name":"Dongqing Hu","orcid":"https://orcid.org/0000-0002-2793-3594"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dongqing Hu","raw_affiliation_strings":["School of Information Science and Technology, Beijing University of Technology, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Information Science and Technology, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079345272","display_name":"Yu Wu","orcid":"https://orcid.org/0000-0002-5847-946X"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yu Wu","raw_affiliation_strings":["School of Information Science and Technology, Beijing University of Technology, Beijing, China"],"raw_orcid":"https://orcid.org/0000-0002-5847-946X","affiliations":[{"raw_affiliation_string":"School of Information Science and Technology, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050388987","display_name":"Yunpeng Jia","orcid":"https://orcid.org/0009-0004-8340-3215"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yunpeng Jia","raw_affiliation_strings":["School of Information Science and Technology, Beijing University of Technology, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Information Science and Technology, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068170719","display_name":"Bodian Li","orcid":"https://orcid.org/0000-0003-0747-7998"},"institutions":[{"id":"https://openalex.org/I12912129","display_name":"Northeastern University","ror":"https://ror.org/04t5xt781","country_code":"US","type":"education","lineage":["https://openalex.org/I12912129"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Bodian Li","raw_affiliation_strings":["Network Science Institute, Northeastern University, Boston, MA, USA"],"raw_orcid":"https://orcid.org/0000-0003-0747-7998","affiliations":[{"raw_affiliation_string":"Network Science Institute, Northeastern University, Boston, MA, USA","institution_ids":["https://openalex.org/I12912129"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5030647669","display_name":"Yuanfu Zhao","orcid":"https://orcid.org/0000-0002-6786-6293"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuanfu Zhao","raw_affiliation_strings":["School of Information Science and Technology, Beijing University of Technology, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Information Science and Technology, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5089278783"],"corresponding_institution_ids":["https://openalex.org/I37796252"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.1742328,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"13","issue":null,"first_page":"143102","last_page":"143109"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9977999925613403,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9890000224113464,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.7514657974243164},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7227846384048462},{"id":"https://openalex.org/keywords/metal\u2013semiconductor-junction","display_name":"Metal\u2013semiconductor junction","score":0.6737832427024841},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5915223360061646},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5149460434913635},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.4576491415500641},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.4171152114868164},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35232168436050415},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3214775025844574},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.14575374126434326},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1240367591381073},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.12149965763092041},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.09691572189331055},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08811318874359131}],"concepts":[{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.7514657974243164},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7227846384048462},{"id":"https://openalex.org/C5667319","wikidata":"https://www.wikidata.org/wiki/Q1924839","display_name":"Metal\u2013semiconductor junction","level":4,"score":0.6737832427024841},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5915223360061646},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5149460434913635},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.4576491415500641},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.4171152114868164},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35232168436050415},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3214775025844574},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14575374126434326},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1240367591381073},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.12149965763092041},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.09691572189331055},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08811318874359131}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2025.3598275","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3598275","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:336e3ace64d149d8b3dfb384a9c858ae","is_oa":true,"landing_page_url":"https://doaj.org/article/336e3ace64d149d8b3dfb384a9c858ae","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 13, Pp 143102-143109 (2025)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2025.3598275","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3598275","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.7599999904632568,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G5604247328","display_name":null,"funder_award_id":"62204011","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":29,"referenced_works":["https://openalex.org/W267840210","https://openalex.org/W1517890617","https://openalex.org/W1549271907","https://openalex.org/W1579937368","https://openalex.org/W1641947315","https://openalex.org/W1987415650","https://openalex.org/W2028313501","https://openalex.org/W2029699094","https://openalex.org/W2060679178","https://openalex.org/W2062339348","https://openalex.org/W2117037876","https://openalex.org/W2125102608","https://openalex.org/W2163145465","https://openalex.org/W2201227904","https://openalex.org/W2329313940","https://openalex.org/W2520486115","https://openalex.org/W2616231286","https://openalex.org/W2737127499","https://openalex.org/W2737163356","https://openalex.org/W2737601825","https://openalex.org/W2765694951","https://openalex.org/W2900616392","https://openalex.org/W2958892473","https://openalex.org/W2961424226","https://openalex.org/W2967405927","https://openalex.org/W2978941520","https://openalex.org/W3034679171","https://openalex.org/W3080881049","https://openalex.org/W4387011250"],"related_works":["https://openalex.org/W2147656057","https://openalex.org/W1981646027","https://openalex.org/W1540585561","https://openalex.org/W2917180890","https://openalex.org/W4200007379","https://openalex.org/W2349347676","https://openalex.org/W2911343812","https://openalex.org/W2170019241","https://openalex.org/W2003109201","https://openalex.org/W2614156624"],"abstract_inverted_index":{"This":[0],"study":[1],"focuses":[2],"on":[3],"the":[4,17,30,40,48,57,67,139],"SiC":[5,58,69,140,178],"MOSFET":[6,70],"with":[7],"integrated":[8],"Schottky":[9],"contact":[10],"super":[11],"barrier":[12],"rectifier":[13],"(SiC":[14,71],"SSBR-MOSFET)":[15],"through":[16],"application":[18],"of":[19,50,143],"TCAD":[20],"simulation":[21],"methodologies.":[22],"During":[23],"its":[24],"operation":[25],"as":[26,39],"a":[27,43,125],"freewheeling":[28],"diode,":[29],"parasitic":[31],"bipolar":[32,51],"body":[33],"diode\u2019s":[34],"activity":[35],"is":[36,53],"effectively":[37],"suppressed":[38],"SSBR":[41],"has":[42],"lower":[44],"turn-on":[45],"voltage.":[46],"Thus,":[47],"problem":[49],"degradation":[52],"entirely":[54],"mitigated.":[55],"Furthermore,":[56],"SSBR-MOSFET":[59],"demonstrates":[60],"outstanding":[61],"dynamic":[62],"performance.":[63],"In":[64],"contrast":[65],"to":[66],"conventional":[68],"C-MOSFET),":[72],"it":[73,186],"exhibits":[74],"decrease":[75],"in":[76,128],"input":[77],"capacitance":[78,88],"(<inline-formula":[79,89,98,108,131],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[80,90,99,109,132,147,158],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[81,91,100,110,133,148,159],"<tex-math":[82,92,101,111,134,149,160],"notation=\"LaTeX\">$C_{\\mathrm":[83,93],"{ISS}}$":[84],"</tex-math></inline-formula>),":[85,95,138],"reverse":[86],"transfer":[87],"{RSS}}$":[94],"gate":[96],"charge":[97,107],"notation=\"LaTeX\">$Q_{\\mathrm":[102,112],"{G}}$":[103,154],"</tex-math></inline-formula>)":[104,114],"and":[105,120,156,173,182],"gate-to-drain":[106],"{GD}}$":[113,165],"by":[115,171],"approximately":[116],"2,":[117],"6,":[118],"2":[119],"12":[121],"times,":[122,175],"respectively.":[123,176],"Despite":[124],"slight":[126],"increase":[127],"specific":[129],"on-resistance":[130],"notation=\"LaTeX\">$R_{\\mathrm":[135,150,161],"{ON\\cdot":[136,151,162],"SP}}$":[137],"SSBR-MOSFET\u2019s":[141,179],"figures":[142],"merit,":[144],"including":[145],"<inline-formula":[146,157],"SP}}\\times":[152,163],"Q_{\\mathrm":[153,164],"</tex-math></inline-formula>":[155],"</tex-math></inline-formula>,":[166],"are":[167],"significantly":[168],"enhanced,":[169],"reducing":[170],"1.8":[172],"11":[174],"The":[177],"exceptional":[180],"performance":[181],"straightforward":[183],"implementation":[184],"render":[185],"highly":[187],"appealing":[188],"for":[189],"advanced":[190],"power":[191],"electronics":[192],"applications.":[193]},"counts_by_year":[],"updated_date":"2026-05-06T08:25:59.206177","created_date":"2025-10-10T00:00:00"}