{"id":"https://openalex.org/W4411019641","doi":"https://doi.org/10.1109/access.2025.3576583","title":"Suppression of Reverse Drain-Induced Barrier Lowering in Negative Capacitance FETs Using a Hetero-Metal-Gate Structure","display_name":"Suppression of Reverse Drain-Induced Barrier Lowering in Negative Capacitance FETs Using a Hetero-Metal-Gate Structure","publication_year":2025,"publication_date":"2025-01-01","ids":{"openalex":"https://openalex.org/W4411019641","doi":"https://doi.org/10.1109/access.2025.3576583"},"language":"en","primary_location":{"id":"doi:10.1109/access.2025.3576583","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3576583","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1109/access.2025.3576583","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5067964542","display_name":"J. Y. Park","orcid":"https://orcid.org/0009-0001-9006-8820"},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae Yeon Park","raw_affiliation_strings":["Department of Electronic Engineering, Sogang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0009-0001-9006-8820","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Sogang University, Seoul, South Korea","institution_ids":["https://openalex.org/I148751991"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067362607","display_name":"Seungwon Go","orcid":"https://orcid.org/0000-0003-3679-6381"},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seungwon Go","raw_affiliation_strings":["Department of Electronic Engineering, Sogang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-3679-6381","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Sogang University, Seoul, South Korea","institution_ids":["https://openalex.org/I148751991"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078239419","display_name":"Dong Keun Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dong Keun Lee","raw_affiliation_strings":["Department of Electronic Engineering, Sogang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0009-0004-7872-5834","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Sogang University, Seoul, South Korea","institution_ids":["https://openalex.org/I148751991"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065181469","display_name":"Seonggeun Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seonggeun Kim","raw_affiliation_strings":["Department of Electronic Engineering, Sogang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0009-0000-2724-912X","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Sogang University, Seoul, South Korea","institution_ids":["https://openalex.org/I148751991"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084632733","display_name":"Sihyun Kim","orcid":"https://orcid.org/0000-0002-9199-4623"},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sihyun Kim","raw_affiliation_strings":["Department of Electronic Engineering, Sogang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-9199-4623","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Sogang University, Seoul, South Korea","institution_ids":["https://openalex.org/I148751991"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063522085","display_name":"Sangwan Kim","orcid":"https://orcid.org/0000-0002-6492-7740"},"institutions":[{"id":"https://openalex.org/I148751991","display_name":"Sogang University","ror":"https://ror.org/056tn4839","country_code":"KR","type":"education","lineage":["https://openalex.org/I148751991"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangwan Kim","raw_affiliation_strings":["Department of Electronic Engineering, Sogang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-6492-7740","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Sogang University, Seoul, South Korea","institution_ids":["https://openalex.org/I148751991"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I148751991"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.5057,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.65515897,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":"13","issue":null,"first_page":"101782","last_page":"101788"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.746599018573761},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7182600498199463},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.610892653465271},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5695966482162476},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.546926736831665},{"id":"https://openalex.org/keywords/drain-induced-barrier-lowering","display_name":"Drain-induced barrier lowering","score":0.4483097493648529},{"id":"https://openalex.org/keywords/metal","display_name":"Metal","score":0.41933420300483704},{"id":"https://openalex.org/keywords/diffusion-capacitance","display_name":"Diffusion capacitance","score":0.41454562544822693},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4144763946533203},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.32410335540771484},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.23306888341903687},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.14066293835639954},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13460686802864075},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08512052893638611}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.746599018573761},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7182600498199463},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.610892653465271},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5695966482162476},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.546926736831665},{"id":"https://openalex.org/C73118932","wikidata":"https://www.wikidata.org/wiki/Q5305541","display_name":"Drain-induced barrier lowering","level":5,"score":0.4483097493648529},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.41933420300483704},{"id":"https://openalex.org/C67337642","wikidata":"https://www.wikidata.org/wiki/Q5275437","display_name":"Diffusion capacitance","level":4,"score":0.41454562544822693},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4144763946533203},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32410335540771484},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.23306888341903687},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.14066293835639954},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13460686802864075},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08512052893638611},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2025.3576583","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3576583","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:73a809d9e5554f3b9e82b12a88d64087","is_oa":true,"landing_page_url":"https://doaj.org/article/73a809d9e5554f3b9e82b12a88d64087","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 13, Pp 101782-101788 (2025)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2025.3576583","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3576583","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.7200000286102295,"display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G5065283028","display_name":null,"funder_award_id":"NRF-2022R1A2C2092727 (30%)","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G5995805984","display_name":null,"funder_award_id":"RS-2024-00408115","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G6229276581","display_name":null,"funder_award_id":"IITP-2025-RS-2023-00260091","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G6754764365","display_name":null,"funder_award_id":"NRF-2022R1A2C2092727","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G8181124415","display_name":null,"funder_award_id":"IO220808-01765-01 (10%)","funder_id":"https://openalex.org/F4320332195","funder_display_name":"Samsung"},{"id":"https://openalex.org/G8811708260","display_name":null,"funder_award_id":"IO220808-01765-01","funder_id":"https://openalex.org/F4320332195","funder_display_name":"Samsung"},{"id":"https://openalex.org/G8861675628","display_name":null,"funder_award_id":"RS-2024-00408115 (50%)","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"}],"funders":[{"id":"https://openalex.org/F4320322202","display_name":"IC Design Education Center","ror":"https://ror.org/005v57z85"},{"id":"https://openalex.org/F4320328359","display_name":"Ministry of Science and ICT, South Korea","ror":"https://ror.org/01wpjm123"},{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":32,"referenced_works":["https://openalex.org/W853383765","https://openalex.org/W1970052784","https://openalex.org/W2016106189","https://openalex.org/W2027984608","https://openalex.org/W2110584581","https://openalex.org/W2126810113","https://openalex.org/W2143451736","https://openalex.org/W2156696223","https://openalex.org/W2172207456","https://openalex.org/W2289750143","https://openalex.org/W2305410567","https://openalex.org/W2337712486","https://openalex.org/W2411877044","https://openalex.org/W2587889922","https://openalex.org/W2757413714","https://openalex.org/W2795401355","https://openalex.org/W2905020981","https://openalex.org/W2923781709","https://openalex.org/W2946579721","https://openalex.org/W3005765195","https://openalex.org/W3014154918","https://openalex.org/W3084045130","https://openalex.org/W3186473697","https://openalex.org/W3188120874","https://openalex.org/W4234978195","https://openalex.org/W4308556042","https://openalex.org/W4313333242","https://openalex.org/W4386374340","https://openalex.org/W4386377002","https://openalex.org/W4392728462","https://openalex.org/W4400953340","https://openalex.org/W4408315898"],"related_works":["https://openalex.org/W1979448382","https://openalex.org/W2028294037","https://openalex.org/W2287154167","https://openalex.org/W2061854865","https://openalex.org/W2781651239","https://openalex.org/W1992124208","https://openalex.org/W1963536502","https://openalex.org/W2054296706","https://openalex.org/W2050412924","https://openalex.org/W2120755836"],"abstract_inverted_index":{"In":[0,87],"this":[1,44],"paper,":[2],"the":[3,10,22,27,37,56,79,90,93,108,123],"reverse":[4],"drain-induced":[5],"barrier":[6,30],"lowering":[7],"(RDIBL)":[8],"in":[9],"negative":[11,48],"capacitance":[12,49],"field-effect":[13,50],"transistor":[14,51],"(NCFET)":[15],"is":[16,19,24,70,131],"discussed.":[17],"It":[18],"found":[20],"that":[21],"RDIBL":[23,99],"attributed":[25],"to":[26,89,103,119],"increase":[28],"of":[29,59,81,111,126],"height":[31],"between":[32],"channel":[33],"and":[34,67,72],"drain":[35,39,68,114],"with":[36,78],"higher":[38],"voltage":[40],"(VDS).":[41],"To":[42],"address":[43],"issue,":[45],"a":[46],"hetero-metal-gate":[47],"(HM":[52],"NCFET),":[53],"which":[54],"features":[55],"metal-gate":[57,112,127],"composed":[58],"two":[60],"different":[61],"work":[62,109,124],"function":[63,110,125],"materials":[64],"at":[65,113,128,133],"source":[66,129],"sides,":[69],"proposed":[71],"its":[73],"electrical":[74],"characteristics":[75],"are":[76],"analyzed":[77],"help":[80],"technology":[82],"computer-aided":[83],"design":[84],"(TCAD)":[85],"simulation.":[86],"contrast":[88],"conventional":[91],"NCFET,":[92],"HM":[94],"NCFET":[95],"can":[96],"efficiently":[97],"suppress":[98],"from":[100,116],"-57":[101],"mV/V":[102,105],"-3":[104],"by":[106],"decreasing":[107],"side":[115,130],"4.6":[117,134],"eV":[118],"4.0":[120],"eV,":[121],"while":[122],"fixed":[132],"eV.":[135]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-06-05T00:00:00"}