{"id":"https://openalex.org/W4409762956","doi":"https://doi.org/10.1109/access.2025.3563689","title":"Improved Resistive Switching Characteristics by O<sub>2</sub> Plasma Treatment in Tri-Layer HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> RRAM","display_name":"Improved Resistive Switching Characteristics by O<sub>2</sub> Plasma Treatment in Tri-Layer HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> RRAM","publication_year":2025,"publication_date":"2025-01-01","ids":{"openalex":"https://openalex.org/W4409762956","doi":"https://doi.org/10.1109/access.2025.3563689"},"language":"en","primary_location":{"id":"doi:10.1109/access.2025.3563689","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3563689","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1109/access.2025.3563689","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5054531939","display_name":"Shyh-Jer Huang","orcid":"https://orcid.org/0000-0003-4989-2292"},"institutions":[{"id":"https://openalex.org/I40689657","display_name":"National Formosa University","ror":"https://ror.org/00q523p52","country_code":"TW","type":"education","lineage":["https://openalex.org/I40689657"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Shyh-Jer Huang","raw_affiliation_strings":["Department of Electro-Optical Engineering, National Formosa University, Yunlin, Taiwan","Department of Electro-Optical Engineering, National Formosa University, Huwei Township, Yunlin County, Taiwan"],"raw_orcid":"https://orcid.org/0000-0003-4989-2292","affiliations":[{"raw_affiliation_string":"Department of Electro-Optical Engineering, National Formosa University, Yunlin, Taiwan","institution_ids":["https://openalex.org/I40689657"]},{"raw_affiliation_string":"Department of Electro-Optical Engineering, National Formosa University, Huwei Township, Yunlin County, Taiwan","institution_ids":["https://openalex.org/I40689657"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Wei-Hsuan Hsieh","orcid":null},"institutions":[{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]},{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["SG","TW"],"is_corresponding":false,"raw_author_name":"Wei-Hsuan Hsieh","raw_affiliation_strings":["Department of Electrical Engineering Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan","Institute of Microelectronics, National Cheng-Kung University, Tainan, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I4210090209","https://openalex.org/I91807558"]},{"raw_affiliation_string":"Institute of Microelectronics, National Cheng-Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008680267","display_name":"Rong-Ming Ko","orcid":"https://orcid.org/0000-0003-0641-2033"},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Rong-Ming Ko","raw_affiliation_strings":["National Cheng-Kung University, Tainan, Taiwan","Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng-Kung University, Tainan, Taiwan"],"raw_orcid":"https://orcid.org/0000-0003-0641-2033","affiliations":[{"raw_affiliation_string":"National Cheng-Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]},{"raw_affiliation_string":"Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng-Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100634122","display_name":"Zi-Hao Wang","orcid":"https://orcid.org/0000-0002-9727-8118"},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Zi-Hao Wang","raw_affiliation_strings":["National Cheng-Kung University, Tainan, Taiwan","Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng-Kung University, Tainan, Taiwan"],"raw_orcid":"https://orcid.org/0000-0002-9727-8118","affiliations":[{"raw_affiliation_string":"National Cheng-Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]},{"raw_affiliation_string":"Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng-Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111378126","display_name":"Yan\u2010Kuin Su","orcid":"https://orcid.org/0000-0001-9581-8486"},"institutions":[{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]},{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["SG","TW"],"is_corresponding":false,"raw_author_name":"Yan-Kuin Su","raw_affiliation_strings":["Department of Electrical Engineering Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan","Institute of Microelectronics, National Cheng-Kung University, Tainan, Taiwan"],"raw_orcid":"https://orcid.org/0000-0001-9581-8486","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I4210090209","https://openalex.org/I91807558"]},{"raw_affiliation_string":"Institute of Microelectronics, National Cheng-Kung University, Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.8523,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.69119334,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":98},"biblio":{"volume":"13","issue":null,"first_page":"81417","last_page":"81422"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.9094785451889038},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5724193453788757},{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.5602596998214722},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.5110608339309692},{"id":"https://openalex.org/keywords/resistive-touchscreen","display_name":"Resistive touchscreen","score":0.429410457611084},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.38465726375579834},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2667993903160095},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.20592474937438965},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.16047626733779907},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.11063599586486816},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08152663707733154},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.06413543224334717},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.058855146169662476}],"concepts":[{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.9094785451889038},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5724193453788757},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.5602596998214722},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5110608339309692},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.429410457611084},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.38465726375579834},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2667993903160095},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.20592474937438965},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.16047626733779907},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11063599586486816},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08152663707733154},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.06413543224334717},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.058855146169662476},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2025.3563689","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3563689","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:7803e299963348818af52a034654cca5","is_oa":true,"landing_page_url":"https://doaj.org/article/7803e299963348818af52a034654cca5","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 13, Pp 81417-81422 (2025)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2025.3563689","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2025.3563689","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.4000000059604645,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G2124547312","display_name":null,"funder_award_id":"NSTC 113-2640-E-006-007","funder_id":"https://openalex.org/F4320331164","funder_display_name":"National Science and Technology Council"},{"id":"https://openalex.org/G419158180","display_name":"Recording and Reading of Nonvolatile Optical Memory with Transition Metal Oxide Nanostructures","funder_award_id":"MOST111-2221-E168-001-MY3","funder_id":"https://openalex.org/F4320322795","funder_display_name":"Ministry of Science and Technology, Taiwan"},{"id":"https://openalex.org/G5647607254","display_name":null,"funder_award_id":"MOST 110-2221-E-168-001-MY3","funder_id":"https://openalex.org/F4320331164","funder_display_name":"National Science and Technology Council"},{"id":"https://openalex.org/G5660102211","display_name":null,"funder_award_id":"MOST 111-2221-E-168-001-MY3","funder_id":"https://openalex.org/F4320331164","funder_display_name":"National Science and Technology Council"},{"id":"https://openalex.org/G7663145663","display_name":"Investigation of Photosensor Application Based on Wide Bandgap Materials","funder_award_id":"MOST110-2221-E168-001-MY3","funder_id":"https://openalex.org/F4320322795","funder_display_name":"Ministry of Science and Technology, Taiwan"}],"funders":[{"id":"https://openalex.org/F4320322795","display_name":"Ministry of Science and Technology, Taiwan","ror":"https://ror.org/02kv4zf79"},{"id":"https://openalex.org/F4320331164","display_name":"National Science and Technology Council","ror":"https://ror.org/00wnb9798"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W2036899386","https://openalex.org/W2048936516","https://openalex.org/W2074357625","https://openalex.org/W2128240512","https://openalex.org/W2180172329","https://openalex.org/W2605887261","https://openalex.org/W2611741526","https://openalex.org/W2769585078","https://openalex.org/W2883615113","https://openalex.org/W2901020704","https://openalex.org/W2973387712","https://openalex.org/W3094521649","https://openalex.org/W3184360579","https://openalex.org/W3201128272","https://openalex.org/W4224235682","https://openalex.org/W4233923606"],"related_works":["https://openalex.org/W2054635671","https://openalex.org/W2545245183","https://openalex.org/W2017425642","https://openalex.org/W2350916061","https://openalex.org/W2952918855","https://openalex.org/W1970117475","https://openalex.org/W4396815615","https://openalex.org/W3161624601","https://openalex.org/W2199653281","https://openalex.org/W4250786366"],"abstract_inverted_index":{"In":[0],"this":[1],"study,":[2],"a":[3,11,35,53,99],"tri-layer":[4,40,112],"HfO2/Al2O3/HfO2(7/6/7":[5],"nm)":[6],"structure":[7],"was":[8,73],"fabricated":[9],"using":[10],"cost-effective":[12],"RF":[13],"sputtering":[14],"process":[15],"and":[16,63,94,101],"treated":[17],"with":[18,34],"oxygen":[19,43,87],"plasma":[20,88],"to":[21],"serve":[22],"as":[23],"the":[24,42,78,84,108],"resistive":[25,70],"switching":[26,71,92],"(RS)":[27],"active":[28],"layer":[29],"for":[30,114],"RRAM":[31],"devices.":[32],"Compared":[33],"single-layer":[36],"HfO2and":[37],"an":[38],"untreated":[39],"structure,":[41],"plasma-treated":[44,111],"device":[45],"exhibited":[46],"significantly":[47],"enhanced":[48],"performance.":[49],"These":[50],"improvements":[51],"include":[52],"higher":[54],"ON/OFF":[55],"current":[56],"ratio,":[57],"extended":[58],"endurance":[59],"exceeding":[60],"1600":[61],"cycles,":[62],"stable":[64],"retention":[65],"beyond":[66],"104seconds.":[67],"Furthermore,":[68],"multilevel":[69,116],"behavior":[72],"reliably":[74],"demonstrated":[75],"by":[76],"modulating":[77],"compliance":[79],"current.":[80],"The":[81],"results":[82],"highlight":[83],"effectiveness":[85],"of":[86,110],"treatment":[89],"in":[90],"improving":[91],"uniformity":[93],"electrical":[95],"stability,":[96],"while":[97],"maintaining":[98],"scalable":[100],"industry-friendly":[102],"fabrication":[103],"process.":[104],"This":[105],"work":[106],"underscores":[107],"potential":[109],"structures":[113],"high-density,":[115],"non-volatile":[117],"memory":[118],"applications.":[119]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":1}],"updated_date":"2026-08-13T07:04:57.449891","created_date":"2025-04-25T00:00:00"}