{"id":"https://openalex.org/W4404563152","doi":"https://doi.org/10.1109/access.2024.3502161","title":"Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kV SiC MOSFETs Across Multiple Vendors and Generations","display_name":"Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kV SiC MOSFETs Across Multiple Vendors and Generations","publication_year":2024,"publication_date":"2024-01-01","ids":{"openalex":"https://openalex.org/W4404563152","doi":"https://doi.org/10.1109/access.2024.3502161"},"language":"en","primary_location":{"id":"doi:10.1109/access.2024.3502161","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2024.3502161","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1109/access.2024.3502161","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5106436276","display_name":"Shahid Makhdoom","orcid":null},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Shahid Makhdoom","raw_affiliation_strings":["College of the of Electrical Engineering, Zhejiang University, Hangzhou, China"],"affiliations":[{"raw_affiliation_string":"College of the of Electrical Engineering, Zhejiang University, Hangzhou, China","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084303956","display_name":"Na Ren","orcid":"https://orcid.org/0000-0003-1720-9735"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Na Ren","raw_affiliation_strings":["College of the of Electrical Engineering, Zhejiang University, Hangzhou, China"],"affiliations":[{"raw_affiliation_string":"College of the of Electrical Engineering, Zhejiang University, Hangzhou, China","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100600893","display_name":"Ce Wang","orcid":"https://orcid.org/0000-0002-6346-1168"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ce Wang","raw_affiliation_strings":["College of the of Electrical Engineering, Zhejiang University, Hangzhou, China"],"affiliations":[{"raw_affiliation_string":"College of the of Electrical Engineering, Zhejiang University, Hangzhou, China","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006092520","display_name":"Chaobiao Lin","orcid":"https://orcid.org/0009-0007-7180-4996"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chaobiao Lin","raw_affiliation_strings":["College of the of Electrical Engineering, Zhejiang University, Hangzhou, China"],"affiliations":[{"raw_affiliation_string":"College of the of Electrical Engineering, Zhejiang University, Hangzhou, China","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100640798","display_name":"Yiding Wu","orcid":"https://orcid.org/0009-0004-3866-2832"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yiding Wu","raw_affiliation_strings":["College of the of Electrical Engineering, Zhejiang University, Hangzhou, China"],"affiliations":[{"raw_affiliation_string":"College of the of Electrical Engineering, Zhejiang University, Hangzhou, China","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5062220386","display_name":"Kuang Sheng","orcid":"https://orcid.org/0000-0001-8839-7281"},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kuang Sheng","raw_affiliation_strings":["College of the of Electrical Engineering, Zhejiang University, Hangzhou, China"],"affiliations":[{"raw_affiliation_string":"College of the of Electrical Engineering, Zhejiang University, Hangzhou, China","institution_ids":["https://openalex.org/I76130692"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5106436276"],"corresponding_institution_ids":["https://openalex.org/I76130692"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":1.3317,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.81503469,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":97,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9902999997138977,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5424723029136658},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.5122599005699158},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.4894362986087799},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.44818544387817383},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3781740069389343},{"id":"https://openalex.org/keywords/environmental-science","display_name":"Environmental science","score":0.3480539321899414},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.340101957321167},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3245803117752075},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.19666177034378052},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16377246379852295},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.16133016347885132},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.079215407371521}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5424723029136658},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5122599005699158},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.4894362986087799},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.44818544387817383},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3781740069389343},{"id":"https://openalex.org/C39432304","wikidata":"https://www.wikidata.org/wiki/Q188847","display_name":"Environmental science","level":0,"score":0.3480539321899414},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.340101957321167},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3245803117752075},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.19666177034378052},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16377246379852295},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16133016347885132},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.079215407371521}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2024.3502161","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2024.3502161","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:82eb4ae9fc104a35878543b78da7339c","is_oa":true,"landing_page_url":"https://doaj.org/article/82eb4ae9fc104a35878543b78da7339c","pdf_url":null,"source":{"id":"https://openalex.org/S112646816","display_name":"SHILAP Revista de lepidopterolog\u00eda","issn_l":"0300-5267","issn":["0300-5267","2340-4078"],"is_oa":true,"is_in_doaj":true,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 12, Pp 191442-191460 (2024)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2024.3502161","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2024.3502161","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":29,"referenced_works":["https://openalex.org/W1984507400","https://openalex.org/W2032767067","https://openalex.org/W2284619248","https://openalex.org/W2346063839","https://openalex.org/W2394508550","https://openalex.org/W2577976329","https://openalex.org/W2730094298","https://openalex.org/W2737127499","https://openalex.org/W2738291582","https://openalex.org/W2808471395","https://openalex.org/W2894762699","https://openalex.org/W2894798347","https://openalex.org/W2929211156","https://openalex.org/W2958918340","https://openalex.org/W2967146328","https://openalex.org/W2986336370","https://openalex.org/W3006564841","https://openalex.org/W3006583372","https://openalex.org/W3049041787","https://openalex.org/W3117267298","https://openalex.org/W3118222326","https://openalex.org/W3159514838","https://openalex.org/W3165443722","https://openalex.org/W4205516743","https://openalex.org/W4205616755","https://openalex.org/W4382371024","https://openalex.org/W4385413369","https://openalex.org/W4401544887","https://openalex.org/W6728868931"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2965295431","https://openalex.org/W2254931227","https://openalex.org/W2966234605","https://openalex.org/W1791605777","https://openalex.org/W1542396018","https://openalex.org/W1598582149","https://openalex.org/W2551593789","https://openalex.org/W2129261410","https://openalex.org/W2070842381"],"abstract_inverted_index":{"Silicon":[0],"Carbide":[1],"(SiC)":[2],"MOSFETs":[3,42],"have":[4],"gained":[5],"significant":[6,261],"attention":[7],"in":[8,17,251],"power":[9,220],"electronics":[10],"for":[11,120,163,174,279,285],"their":[12],"superior":[13,178],"characteristics.":[14],"Despite":[15],"advances":[16],"1.2kV":[18,40],"SiC":[19,41,282],"MOSFET":[20,283],"generations,":[21,47],"a":[22,182,207],"comprehensive":[23],"comparative":[24],"analysis":[25],"of":[26,39,80,186,192,209,221],"different":[27],"device":[28],"types":[29],"remains":[30],"limited.":[31],"This":[32],"study":[33],"examines":[34],"the":[35,252,264],"short-circuit":[36],"(SC)":[37],"behavior":[38],"across":[43],"multiple":[44],"vendors":[45],"and":[46,50,70,83,138,165,189,218,240,249,255,269,274],"including":[48],"planar":[49,203],"trench":[51,199],"structures.":[52],"Key":[53],"metrics":[54],"such":[55],"as":[56,109,111],"Short":[57],"Circuit":[58],"Withstand":[59],"Time":[60],"(SCWT),":[61],"SC":[62,64,67,71,94,183,270],"energy,":[63],"peak":[65,219],"power,":[66],"energy":[68,184],"density,":[69],"current":[72,190],"density":[73,185,191],"were":[74,229],"evaluated":[75],"at":[76,195,224],"DC":[77],"bus":[78],"voltages":[79],"400V,":[81],"600V,":[82],"800V.":[84,196,225],"Our":[85],"findings":[86,259],"reveal":[87],"that":[88,101],"third-generation":[89],"(3G)":[90],"devices":[91],"exhibit":[92],"inferior":[93],"performance":[95,268],"due":[96],"to":[97],"smaller":[98,135,140],"die":[99],"areas":[100],"impede":[102],"heat":[103],"dissipation,":[104],"with":[105,130,181,206,276],"800V":[106],"survival":[107],"times":[108],"low":[110],"<inline-formula":[112,155,166,210],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[113,147,156,167,211],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[114,148,157,168,212],"<tex-math":[115,149,158,169,213],"notation=\"LaTeX\">$2.25~\\mu":[116],"$":[117,151,160,171,215],"</tex-math></inline-formula>":[118,152,161,172,216],"s":[119,153,162,173,217],"GeneSiC-3G.":[121],"In":[122],"contrast,":[123],"trench-based":[124],"designs":[125,284],"showed":[126],"improved":[127],"resilience.":[128],"Infineon-1G,":[129],"an":[131],"active":[132,253],"area":[133],"44.3%":[134],"than":[136,141],"Littelfuse-1G":[137],"45%":[139],"CREE-2G,":[142],"achieved":[143],"comparable":[144],"SCWT":[145,208],"(<inline-formula":[146],"notation=\"LaTeX\">$4.5~\\mu":[150,159],"vs.":[154],"Littelfuse":[164],"notation=\"LaTeX\">$4~\\mu":[170],"CREE-2G)":[175],"while":[176],"demonstrating":[177],"thermal":[179],"management,":[180],"0.096":[187],"J/mm2":[188],"41.74":[193],"A/mm2":[194],"Similarly,":[197],"another":[198],"device,":[200],"Rohm-3G,":[201],"outperformed":[202],"3G":[204],"devices,":[205],"notation=\"LaTeX\">$3.5~\\mu":[214],"110":[222],"kW":[223],"Post-SC":[226],"failure":[227],"mechanisms":[228],"systematically":[230],"analyzed":[231],"using":[232],"optical":[233],"microscopy,":[234],"Lock-In":[235],"Thermal":[236],"Emission":[237],"Microscopy":[238],"(LITEM),":[239],"Focused":[241],"Ion":[242],"Beam":[243],"(FIB),":[244],"revealing":[245],"gate":[246],"leakage":[247],"paths":[248],"damage":[250],"regions":[254],"two-finger":[256],"area.":[257],"These":[258],"offer":[260],"insights":[262],"into":[263],"trade-offs":[265],"between":[266],"on-state":[267],"robustness,":[271],"providing":[272],"manufacturers":[273],"designers":[275],"crucial":[277],"guidance":[278],"developing":[280],"optimized":[281],"high-power":[286],"applications.":[287]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":5}],"updated_date":"2025-12-19T19:40:27.379048","created_date":"2025-10-10T00:00:00"}