{"id":"https://openalex.org/W4404307184","doi":"https://doi.org/10.1109/access.2024.3497933","title":"Numerical Simulations of Gate-Granularity- Induced Subthreshold Characteristics Deterioration of MOSFETs Magnified at Cryogenic Temperatures","display_name":"Numerical Simulations of Gate-Granularity- Induced Subthreshold Characteristics Deterioration of MOSFETs Magnified at Cryogenic Temperatures","publication_year":2024,"publication_date":"2024-01-01","ids":{"openalex":"https://openalex.org/W4404307184","doi":"https://doi.org/10.1109/access.2024.3497933"},"language":"en","primary_location":{"id":"doi:10.1109/access.2024.3497933","is_oa":true,"landing_page_url":"http://dx.doi.org/10.1109/access.2024.3497933","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"http://dx.doi.org/10.1109/access.2024.3497933","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5052208885","display_name":"Kuo-Hsing Kao","orcid":"https://orcid.org/0000-0003-0137-2466"},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Kuo-Hsing Kao","raw_affiliation_strings":["Department of Electrical Engineering, National Cheng Kung University (NCKU), Tainan, Taiwan"],"raw_orcid":"https://orcid.org/0000-0003-0137-2466","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Cheng Kung University (NCKU), Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063898260","display_name":"Zhen-Jin Wang","orcid":"https://orcid.org/0000-0002-7250-0501"},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Zong-Hong Wang","raw_affiliation_strings":["Department of Electrical Engineering, National Cheng Kung University (NCKU), Tainan, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Cheng Kung University (NCKU), Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Yu-Chia Pai","orcid":"https://orcid.org/0009-0002-7801-3656"},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yu-Chia Pai","raw_affiliation_strings":["Department of Electrical Engineering, National Cheng Kung University (NCKU), Tainan, Taiwan"],"raw_orcid":"https://orcid.org/0009-0002-7801-3656","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Cheng Kung University (NCKU), Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064724988","display_name":"Chin\u2010Chi Cheng","orcid":"https://orcid.org/0000-0003-2010-730X"},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chen-Chi Cheng","raw_affiliation_strings":["Department of Electrical Engineering, National Cheng Kung University (NCKU), Tainan, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Cheng Kung University (NCKU), Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038947493","display_name":"Darsen D. Lu","orcid":"https://orcid.org/0000-0002-1956-6093"},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Darsen D. Lu","raw_affiliation_strings":["Department of Electrical Engineering, National Cheng Kung University (NCKU), Tainan, Taiwan"],"raw_orcid":"https://orcid.org/0000-0002-1956-6093","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, National Cheng Kung University (NCKU), Tainan, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038179742","display_name":"Wen\u2010Jay Lee","orcid":"https://orcid.org/0000-0003-1339-3133"},"institutions":[{"id":"https://openalex.org/I4210107525","display_name":"National Center for High-Performance Computing","ror":"https://ror.org/01jpzd518","country_code":"TW","type":"facility","lineage":["https://openalex.org/I4210107525","https://openalex.org/I4210128167","https://openalex.org/I4210166867"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Wen-Jay Lee","raw_affiliation_strings":["National Center for High-Performance Computing, Hsinchu, Taiwan"],"raw_orcid":"https://orcid.org/0000-0003-1339-3133","affiliations":[{"raw_affiliation_string":"National Center for High-Performance Computing, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210107525"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5045195849","display_name":"Nan-Yow Chen","orcid":"https://orcid.org/0000-0001-8139-6809"},"institutions":[{"id":"https://openalex.org/I4210107525","display_name":"National Center for High-Performance Computing","ror":"https://ror.org/01jpzd518","country_code":"TW","type":"facility","lineage":["https://openalex.org/I4210107525","https://openalex.org/I4210128167","https://openalex.org/I4210166867"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Nan-Yow Chen","raw_affiliation_strings":["National Center for High-Performance Computing, Hsinchu, Taiwan"],"raw_orcid":"https://orcid.org/0000-0001-8139-6809","affiliations":[{"raw_affiliation_string":"National Center for High-Performance Computing, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I4210107525"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5052208885"],"corresponding_institution_ids":["https://openalex.org/I91807558"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.1968,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.53045423,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":95},"biblio":{"volume":"12","issue":null,"first_page":"169748","last_page":"169754"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9965000152587891,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.992900013923645,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.8177353143692017},{"id":"https://openalex.org/keywords/granularity","display_name":"Granularity","score":0.7751716375350952},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.643561840057373},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6214854717254639},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.5273345708847046},{"id":"https://openalex.org/keywords/subthreshold-slope","display_name":"Subthreshold slope","score":0.5004827976226807},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4845110774040222},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.33919569849967957},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.2978008985519409},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2819737195968628},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2384842038154602},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.23099854588508606},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.14959266781806946},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12014684081077576},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10427945852279663}],"concepts":[{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.8177353143692017},{"id":"https://openalex.org/C177774035","wikidata":"https://www.wikidata.org/wiki/Q1246948","display_name":"Granularity","level":2,"score":0.7751716375350952},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.643561840057373},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6214854717254639},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.5273345708847046},{"id":"https://openalex.org/C103566474","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold slope","level":5,"score":0.5004827976226807},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4845110774040222},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.33919569849967957},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.2978008985519409},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2819737195968628},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2384842038154602},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23099854588508606},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14959266781806946},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12014684081077576},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10427945852279663},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2024.3497933","is_oa":true,"landing_page_url":"http://dx.doi.org/10.1109/access.2024.3497933","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:a5ce1661d24c406686c5dde717fa10d6","is_oa":true,"landing_page_url":"https://doaj.org/article/a5ce1661d24c406686c5dde717fa10d6","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 12, Pp 169748-169754 (2024)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2024.3497933","is_oa":true,"landing_page_url":"http://dx.doi.org/10.1109/access.2024.3497933","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/13","score":0.6299999952316284,"display_name":"Climate action"}],"awards":[{"id":"https://openalex.org/G16935026","display_name":null,"funder_award_id":"NSTC 112-2222-E-006-010-MY2","funder_id":"https://openalex.org/F4320331164","funder_display_name":"National Science and Technology Council"},{"id":"https://openalex.org/G6176843618","display_name":null,"funder_award_id":"113-2218-E-006-019-MBK","funder_id":"https://openalex.org/F4320331164","funder_display_name":"National Science and Technology Council"},{"id":"https://openalex.org/G7619047382","display_name":null,"funder_award_id":"113-2628-E-006-015-MY4","funder_id":"https://openalex.org/F4320331164","funder_display_name":"National Science and Technology Council"}],"funders":[{"id":"https://openalex.org/F4320331164","display_name":"National Science and Technology Council","ror":"https://ror.org/00wnb9798"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":26,"referenced_works":["https://openalex.org/W2011185858","https://openalex.org/W2024499187","https://openalex.org/W2045839260","https://openalex.org/W2048782890","https://openalex.org/W2056565607","https://openalex.org/W2065851146","https://openalex.org/W2075763695","https://openalex.org/W2089948631","https://openalex.org/W2103969534","https://openalex.org/W2106607114","https://openalex.org/W2117068879","https://openalex.org/W2142361451","https://openalex.org/W2490765418","https://openalex.org/W2522296598","https://openalex.org/W2556112158","https://openalex.org/W2996946661","https://openalex.org/W3019381406","https://openalex.org/W3040079691","https://openalex.org/W3045670250","https://openalex.org/W3209965852","https://openalex.org/W4214635947","https://openalex.org/W4221084382","https://openalex.org/W4293255045","https://openalex.org/W4321380749","https://openalex.org/W4385192360","https://openalex.org/W4387251589"],"related_works":["https://openalex.org/W2545890115","https://openalex.org/W1999741645","https://openalex.org/W2470478960","https://openalex.org/W2545133822","https://openalex.org/W2010066109","https://openalex.org/W2095374523","https://openalex.org/W2545707786","https://openalex.org/W2238105798","https://openalex.org/W2081767698","https://openalex.org/W2276236870"],"abstract_inverted_index":{"While":[0],"gate":[1,35,69,130],"workfunction":[2,36],"fluctuation":[3,37],"causes":[4],"the":[5,32,66,72,89,95,99,109,119],"threshold":[6,79],"voltage":[7,23,148],"shift":[8],"of":[9,34,62,68,78],"transistors,":[10],"it":[11],"leads":[12],"to":[13,129,146],"off-":[14],"and":[15,24,83,93,105,121,142,157],"on-state":[16],"current":[17,116],"variations":[18],"with":[19],"a":[20,144],"given":[21],"supply":[22,147],"circuit":[25],"performance":[26,74],"degradation":[27],"at":[28,42,125,139],"room":[29],"temperatures.":[30],"However,":[31],"impacts":[33],"on":[38,50,71,98],"device":[39,73,110],"electrical":[40],"characteristics":[41],"cryogenic":[43,60,126,140],"temperatures":[44,127,141],"are":[45],"still":[46],"unclear":[47],"yet.":[48],"Based":[49],"self-consistent":[51],"numerical":[52],"simulations,":[53],"we":[54],"report":[55],"in":[56,76,118,135,162],"this":[57,163],"work":[58],"that":[59],"operation":[61],"n-channel":[63],"transistors":[64],"magnifies":[65],"influence":[67],"granularity":[70,87],"variation":[75],"terms":[77],"voltage,":[80],"subthreshold":[81,120,136],"swing":[82,137],"drain":[84],"currents.":[85],"Gate":[86],"roughens":[88],"channel":[90,111],"potential":[91,158],"landscape":[92],"forms":[94],"local":[96],"minima":[97],"conduction":[100],"band":[101],"for":[102,150],"electron":[103],"transport,":[104],"which":[106],"effectively":[107],"reduces":[108],"width.":[112],"Our":[113],"results":[114],"highlight":[115],"deterioration":[117],"weak":[122],"inversion":[123],"regions":[124],"due":[128],"granularity.":[131],"It":[132],"may":[133],"result":[134],"saturation":[138],"pose":[143],"challenge":[145],"scaling":[149],"power":[151],"management.":[152],"Device":[153],"physics":[154],"is":[155,160],"explained":[156],"solution":[159],"discussed":[161],"paper.":[164]},"counts_by_year":[{"year":2025,"cited_by_count":1}],"updated_date":"2026-05-06T08:25:59.206177","created_date":"2025-10-10T00:00:00"}