{"id":"https://openalex.org/W4402508546","doi":"https://doi.org/10.1109/access.2024.3459891","title":"Novel STI technology for enhancing reliability of High-k/Metal gate DRAM (June 2024)","display_name":"Novel STI technology for enhancing reliability of High-k/Metal gate DRAM (June 2024)","publication_year":2024,"publication_date":"2024-01-01","ids":{"openalex":"https://openalex.org/W4402508546","doi":"https://doi.org/10.1109/access.2024.3459891"},"language":"en","primary_location":{"id":"doi:10.1109/access.2024.3459891","is_oa":true,"landing_page_url":"http://dx.doi.org/10.1109/access.2024.3459891","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"http://dx.doi.org/10.1109/access.2024.3459891","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5114226192","display_name":"Hyojin Park","orcid":null},"institutions":[{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Hyojin Park","raw_affiliation_strings":["Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, Republic of Korea"],"raw_orcid":"https://orcid.org/0009-0009-8572-609X","affiliations":[{"raw_affiliation_string":"Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, Republic of Korea","institution_ids":["https://openalex.org/I848706"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086128779","display_name":"Gyu-Hyun Kil","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gyuhyun Kil","raw_affiliation_strings":["DRAM Process Architecture Team, Samsung Electronics Co, Hwaseong, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Process Architecture Team, Samsung Electronics Co, Hwaseong, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080781830","display_name":"Wonju Sung","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Wonju Sung","raw_affiliation_strings":["DRAM Process Architecture Team, Samsung Electronics Co, Hwaseong, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Process Architecture Team, Samsung Electronics Co, Hwaseong, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101571911","display_name":"Jung-Hoon Han","orcid":"https://orcid.org/0000-0002-3721-7700"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Junghoon Han","raw_affiliation_strings":["DRAM Process Architecture Team, Samsung Electronics Co, Hwaseong, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Process Architecture Team, Samsung Electronics Co, Hwaseong, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027155334","display_name":"Jungwoo Song","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jungwoo Song","raw_affiliation_strings":["DRAM Process Architecture Team, Samsung Electronics Co, Hwaseong, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DRAM Process Architecture Team, Samsung Electronics Co, Hwaseong, Republic of Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5067774586","display_name":"Byoungdeog Choi","orcid":"https://orcid.org/0000-0003-0411-4323"},"institutions":[{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byoungdeog Choi","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0003-0411-4323","affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea","institution_ids":["https://openalex.org/I848706"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5114226192"],"corresponding_institution_ids":["https://openalex.org/I848706"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.12425678,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"1"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9962999820709229,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.8718283176422119},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6702675223350525},{"id":"https://openalex.org/keywords/metal-gate","display_name":"Metal gate","score":0.4920186698436737},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4494372308254242},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4298322796821594},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4108920097351074},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.39681047201156616},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3965911269187927},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.32470470666885376},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18932166695594788},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.1240394115447998},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.07854554057121277},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07818830013275146}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.8718283176422119},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6702675223350525},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.4920186698436737},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4494372308254242},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4298322796821594},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4108920097351074},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.39681047201156616},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3965911269187927},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32470470666885376},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18932166695594788},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.1240394115447998},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.07854554057121277},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07818830013275146},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2024.3459891","is_oa":true,"landing_page_url":"http://dx.doi.org/10.1109/access.2024.3459891","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:e56a0bc5646e40389047d36e9136ccd7","is_oa":true,"landing_page_url":"https://doaj.org/article/e56a0bc5646e40389047d36e9136ccd7","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 12, Pp 139427-139434 (2024)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2024.3459891","is_oa":true,"landing_page_url":"http://dx.doi.org/10.1109/access.2024.3459891","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2033512842","https://openalex.org/W4322734194","https://openalex.org/W4233600955","https://openalex.org/W2913665393","https://openalex.org/W2369695847","https://openalex.org/W3005535424","https://openalex.org/W2994319598","https://openalex.org/W2047067935","https://openalex.org/W1607054433","https://openalex.org/W2110842462"],"abstract_inverted_index":{"The":[0],"challenges":[1],"associated":[2],"with":[3,22,133],"semiconductor":[4,14],"are":[5],"increasing":[6],"because":[7],"of":[8,20,32,48,130,161,174,184,200,216,235,249],"the":[9,13,17,30,49,59,67,84,102,105,111,118,124,131,136,141,147,152,159,162,172,175,181,188,195,201,208,213,217,225,232,245],"rapid":[10],"changes":[11],"in":[12,61,71,88,104,146],"market":[15],"and":[16,187,198,239],"extreme":[18],"scaling":[19],"semiconductors,":[21],"some":[23],"processes":[24,199],"reaching":[25],"their":[26,241],"technological":[27,242],"limits.":[28],"In":[29],"case":[31],"gate":[33,44,68,85,89,127,176],"dielectrics,":[34],"these":[35],"limitations":[36],"can":[37],"be":[38],"overcome":[39],"by":[40],"adopting":[41],"high-k":[42],"metal":[43],"(HKMG)":[45],"architecture":[46],"instead":[47],"previously":[50],"used":[51],"poly":[52],"silicon/silicon":[53],"oxy-nitride":[54],"(PSION)":[55],"structure.":[56],"However,":[57],"implementing":[58],"HKMG":[60,91,132,202,218,236],"a":[62,74,168,250],"conventional":[63],"DRAM":[64,92,237],"process":[65,97,122,129,156],"degrades":[66],"oxide.":[69],"Therefore,":[70],"this":[72],"study,":[73],"shallow":[75],"trench":[76],"isolation":[77],"(STI)":[78],"technology":[79,228],"was":[80,98,144,178,191,210],"developed":[81,99],"to":[82,100,157],"improve":[83],"oxide":[86,106,128,177,189,233],"reliability":[87,190,209,234],"first":[90],"structures.":[93],"A":[94],"novel":[95],"STI":[96,112,119,138,148,153,163,185,226],"prevent":[101],"reduction":[103],"growth":[107,173],"that":[108,207,224],"occurs":[109],"when":[110],"seam":[113,164],"(or":[114,165],"void)":[115],"generated":[116],"during":[117],"gap":[120,154],"fill":[121,155],"meets":[123],"low":[125],"temperature":[126],"SiGe.":[134],"With":[135],"spacer":[137,143],"(S-STI)":[139],"structure,":[140],"ALD":[142],"formed":[145],"space":[149],"region":[150],"before":[151],"control":[158],"position":[160],"void).":[166],"Thus,":[167],"favorable":[169],"environment":[170],"for":[171,244],"established":[179],"under":[180],"reduced":[182],"effect":[183],"seam,":[186],"improved":[192],"while":[193],"maintaining":[194],"original":[196],"structure":[197],"DRAM.":[203],"Various":[204],"analyses":[205],"confirmed":[206],"enhanced":[211],"without":[212],"inherent":[214],"characteristics":[215],"being":[219],"affected.":[220],"These":[221],"results":[222],"revealed":[223],"integration":[227],"introduced":[229],"herein":[230],"improves":[231],"products":[238],"maintains":[240],"excellence":[243],"various":[246],"complex":[247],"needs":[248],"rapidly":[251],"changing":[252],"market.":[253]},"counts_by_year":[],"updated_date":"2026-05-06T08:25:59.206177","created_date":"2024-09-14T00:00:00"}