{"id":"https://openalex.org/W4401607492","doi":"https://doi.org/10.1109/access.2024.3444473","title":"A 3 kW GaN HEMT Based Three-Phase Converter Achieving a Switching Frequency of 300 kHz and an Efficiency of 97.06%","display_name":"A 3 kW GaN HEMT Based Three-Phase Converter Achieving a Switching Frequency of 300 kHz and an Efficiency of 97.06%","publication_year":2024,"publication_date":"2024-01-01","ids":{"openalex":"https://openalex.org/W4401607492","doi":"https://doi.org/10.1109/access.2024.3444473"},"language":"en","primary_location":{"id":"doi:10.1109/access.2024.3444473","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2024.3444473","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1109/access.2024.3444473","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100413077","display_name":"Zihao Wang","orcid":"https://orcid.org/0000-0001-7669-3526"},"institutions":[{"id":"https://openalex.org/I25757504","display_name":"China University of Mining and Technology","ror":"https://ror.org/01xt2dr21","country_code":"CN","type":"education","lineage":["https://openalex.org/I25757504"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Zihao Wang","raw_affiliation_strings":["School of Electrical Engineering, China University of Mining and Technology, Xuzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, China University of Mining and Technology, Xuzhou, China","institution_ids":["https://openalex.org/I25757504"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100357207","display_name":"Fei Ye","orcid":"https://orcid.org/0000-0001-9132-3283"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Fei Ye","raw_affiliation_strings":["Sungrow Power Supply Company Ltd., Hefei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sungrow Power Supply Company Ltd., Hefei, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109764385","display_name":"Shunshuai Duan","orcid":null},"institutions":[{"id":"https://openalex.org/I4210156189","display_name":"Shanghai Dianji University","ror":"https://ror.org/055fene14","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210156189"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shunshuai Duan","raw_affiliation_strings":["School of Electrical Engineering, Shanghai Dianji University, Shanghai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Shanghai Dianji University, Shanghai, China","institution_ids":["https://openalex.org/I4210156189"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064083114","display_name":"Xibo Yuan","orcid":"https://orcid.org/0000-0002-8249-5857"},"institutions":[{"id":"https://openalex.org/I25757504","display_name":"China University of Mining and Technology","ror":"https://ror.org/01xt2dr21","country_code":"CN","type":"education","lineage":["https://openalex.org/I25757504"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xibo Yuan","raw_affiliation_strings":["School of Electrical Engineering, China University of Mining and Technology, Xuzhou, China"],"raw_orcid":"https://orcid.org/0000-0002-8249-5857","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, China University of Mining and Technology, Xuzhou, China","institution_ids":["https://openalex.org/I25757504"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112632691","display_name":"Dongsheng Zuo","orcid":"https://orcid.org/0009-0004-9346-6383"},"institutions":[{"id":"https://openalex.org/I4210156189","display_name":"Shanghai Dianji University","ror":"https://ror.org/055fene14","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210156189"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Dongsheng Zuo","raw_affiliation_strings":["School of Electrical Engineering, Shanghai Dianji University, Shanghai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Shanghai Dianji University, Shanghai, China","institution_ids":["https://openalex.org/I4210156189"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036396278","display_name":"Yonglei Zhang","orcid":"https://orcid.org/0000-0002-1452-0109"},"institutions":[{"id":"https://openalex.org/I25757504","display_name":"China University of Mining and Technology","ror":"https://ror.org/01xt2dr21","country_code":"CN","type":"education","lineage":["https://openalex.org/I25757504"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yonglei Zhang","raw_affiliation_strings":["School of Electrical Engineering, China University of Mining and Technology, Xuzhou, China"],"raw_orcid":"https://orcid.org/0000-0002-1452-0109","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, China University of Mining and Technology, Xuzhou, China","institution_ids":["https://openalex.org/I25757504"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101486287","display_name":"Kai Wang","orcid":"https://orcid.org/0000-0001-8563-4739"},"institutions":[{"id":"https://openalex.org/I25757504","display_name":"China University of Mining and Technology","ror":"https://ror.org/01xt2dr21","country_code":"CN","type":"education","lineage":["https://openalex.org/I25757504"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kai Wang","raw_affiliation_strings":["School of Electrical Engineering, China University of Mining and Technology, Xuzhou, China"],"raw_orcid":"https://orcid.org/0000-0001-8563-4739","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, China University of Mining and Technology, Xuzhou, China","institution_ids":["https://openalex.org/I25757504"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100624348","display_name":"Yan Li","orcid":"https://orcid.org/0000-0003-1300-103X"},"institutions":[{"id":"https://openalex.org/I25757504","display_name":"China University of Mining and Technology","ror":"https://ror.org/01xt2dr21","country_code":"CN","type":"education","lineage":["https://openalex.org/I25757504"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yan Li","raw_affiliation_strings":["School of Electrical Engineering, China University of Mining and Technology, Xuzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, China University of Mining and Technology, Xuzhou, China","institution_ids":["https://openalex.org/I25757504"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5100413077"],"corresponding_institution_ids":["https://openalex.org/I25757504"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":1.4779,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.81468317,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":97,"max":98},"biblio":{"volume":"12","issue":null,"first_page":"116442","last_page":"116456"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7724681496620178},{"id":"https://openalex.org/keywords/switching-frequency","display_name":"Switching frequency","score":0.6698983907699585},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5100494027137756},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.5058726668357849},{"id":"https://openalex.org/keywords/phase","display_name":"Phase (matter)","score":0.469648540019989},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.46003326773643494},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.44309794902801514},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.43564873933792114},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.42788341641426086},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3437454104423523},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.31911125779151917},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2136470079421997},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19754433631896973},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11938726902008057}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7724681496620178},{"id":"https://openalex.org/C2777151078","wikidata":"https://www.wikidata.org/wiki/Q30671714","display_name":"Switching frequency","level":3,"score":0.6698983907699585},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5100494027137756},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5058726668357849},{"id":"https://openalex.org/C44280652","wikidata":"https://www.wikidata.org/wiki/Q104837","display_name":"Phase (matter)","level":2,"score":0.469648540019989},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.46003326773643494},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44309794902801514},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.43564873933792114},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.42788341641426086},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3437454104423523},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.31911125779151917},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2136470079421997},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19754433631896973},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11938726902008057},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2024.3444473","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2024.3444473","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:fc72543e629c42eab22973f95fcf290a","is_oa":true,"landing_page_url":"https://doaj.org/article/fc72543e629c42eab22973f95fcf290a","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 12, Pp 116442-116456 (2024)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2024.3444473","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2024.3444473","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8299999833106995}],"awards":[{"id":"https://openalex.org/G2855975849","display_name":null,"funder_award_id":"52177201","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G7602297507","display_name":null,"funder_award_id":"BK20220091","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G7869316359","display_name":null,"funder_award_id":"52107218","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":30,"referenced_works":["https://openalex.org/W1967702868","https://openalex.org/W2008044232","https://openalex.org/W2047637548","https://openalex.org/W2051969659","https://openalex.org/W2055119297","https://openalex.org/W2137651196","https://openalex.org/W2166770431","https://openalex.org/W2319696956","https://openalex.org/W2380261477","https://openalex.org/W2408352446","https://openalex.org/W2519239207","https://openalex.org/W2534692085","https://openalex.org/W2591444556","https://openalex.org/W2616485679","https://openalex.org/W2768881063","https://openalex.org/W2773682900","https://openalex.org/W2799159072","https://openalex.org/W2907770879","https://openalex.org/W3037008762","https://openalex.org/W3046625773","https://openalex.org/W3066682840","https://openalex.org/W3087953139","https://openalex.org/W3088029855","https://openalex.org/W3097080820","https://openalex.org/W3097349042","https://openalex.org/W3109555006","https://openalex.org/W3114825742","https://openalex.org/W4200230149","https://openalex.org/W4396877792","https://openalex.org/W6797553349"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2559825181","https://openalex.org/W4377089489","https://openalex.org/W1975307200","https://openalex.org/W3042786859","https://openalex.org/W4313611767","https://openalex.org/W4385217635","https://openalex.org/W244742193","https://openalex.org/W2466508933"],"abstract_inverted_index":{"With":[0],"wider":[1],"electrification":[2],"in":[3,100],"various":[4],"sectors,":[5],"there":[6],"is":[7],"a":[8,101],"great":[9],"demand":[10],"for":[11,72,130],"high-power,":[12],"high-efficiency":[13],"and":[14,50,61,78,119,133,157],"high-power-density":[15],"converters.":[16],"Compared":[17],"with":[18,172],"conventional":[19],"Si":[20],"devices,":[21],"the":[22,47,54,85,110,123,143],"ultra-fast-switching":[23],"speed":[24],"of":[25,87,112,175],"gallium":[26],"nitride":[27],"(GaN)":[28],"high-electron-mobility-transistors":[29],"(HEMTs)":[30],"can":[31,43,68],"enable":[32],"power":[33,117],"electronics":[34],"converters":[35,132],"to":[36,45,141],"achieve":[37],"very":[38,73],"high":[39],"switching":[40,155,170],"frequencies,":[41],"which":[42,105],"help":[44],"reduce":[46,53],"current":[48],"ripple":[49],"hence":[51],"significantly":[52],"filtering":[55],"components":[56],"such":[57],"as":[58,95,97],"filter":[59],"inductors":[60],"capacitors.":[62],"The":[63],"high-frequency":[64],"GaN":[65,88,113,131],"HEMT":[66],"converter":[67,144],"also":[69,138,178],"be":[70],"used":[71],"high-speed,":[74],"high-fundamental-frequency":[75],"motor":[76],"drives":[77],"other":[79],"applications.":[80],"This":[81],"article":[82],"has":[83,127,137],"evaluated":[84],"performance":[86],"HEMTs":[89],"through":[90],"double":[91],"pulse":[92],"test":[93,99],"(DPT)":[94],"well":[96],"continuous":[98],"DC/AC":[102],"three-phase":[103],"converter,":[104],"provides":[106],"benchmarking":[107],"results":[108],"demonstrating":[109],"capabilities":[111],"devices.":[114],"A":[115],"detailed":[116],"loss":[118],"efficiency":[120,159,174],"model":[121],"considering":[122],"parasitic":[124],"capacitive":[125],"effect":[126],"been":[128,139,161,179],"developed":[129],"an":[134,173],"experimental":[135,147],"prototype":[136],"built":[140],"evaluate":[142],"performance.":[145],"Through":[146],"evaluation,":[148],"3":[149],"kW":[150,165],"output":[151,166],"power,":[152,167],"300":[153],"kHz":[154,169],"frequency":[156,171],"97.06%":[158],"have":[160,177],"achieved.":[162,180],"Further,":[163],"1.5":[164],"600":[168],"94.42%":[176]},"counts_by_year":[{"year":2025,"cited_by_count":5}],"updated_date":"2026-05-06T08:25:59.206177","created_date":"2025-10-10T00:00:00"}