{"id":"https://openalex.org/W4390534111","doi":"https://doi.org/10.1109/access.2024.3349463","title":"A Compact Model for Interface-Type Self-Rectifying Resistive Memory With Experiment Verification","display_name":"A Compact Model for Interface-Type Self-Rectifying Resistive Memory With Experiment Verification","publication_year":2024,"publication_date":"2024-01-01","ids":{"openalex":"https://openalex.org/W4390534111","doi":"https://doi.org/10.1109/access.2024.3349463"},"language":"en","primary_location":{"id":"doi:10.1109/access.2024.3349463","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2024.3349463","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/10379796.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/10379796.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100434618","display_name":"Jinwoo Kim","orcid":"https://orcid.org/0000-0003-4380-6656"},"institutions":[{"id":"https://openalex.org/I163753206","display_name":"Chungbuk National University","ror":"https://ror.org/02wnxgj78","country_code":"KR","type":"education","lineage":["https://openalex.org/I163753206"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jin-Woo Kim","raw_affiliation_strings":["School of Information and Communication Engineering, Chungbuk National University, Cheongju-si, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Information and Communication Engineering, Chungbuk National University, Cheongju-si, Republic of Korea","institution_ids":["https://openalex.org/I163753206"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5093643473","display_name":"Jun-Seok Beom","orcid":null},"institutions":[{"id":"https://openalex.org/I163753206","display_name":"Chungbuk National University","ror":"https://ror.org/02wnxgj78","country_code":"KR","type":"education","lineage":["https://openalex.org/I163753206"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jun-Seok Beom","raw_affiliation_strings":["School of Information and Communication Engineering, Chungbuk National University, Cheongju-si, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Information and Communication Engineering, Chungbuk National University, Cheongju-si, Republic of Korea","institution_ids":["https://openalex.org/I163753206"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009697618","display_name":"Hong\u2010Sub Lee","orcid":"https://orcid.org/0000-0001-9605-8984"},"institutions":[{"id":"https://openalex.org/I35928602","display_name":"Kyung Hee University","ror":"https://ror.org/01zqcg218","country_code":"KR","type":"education","lineage":["https://openalex.org/I35928602"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hong-Sub Lee","raw_affiliation_strings":["Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin-si, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0001-9605-8984","affiliations":[{"raw_affiliation_string":"Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin-si, Republic of Korea","institution_ids":["https://openalex.org/I35928602"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5047060185","display_name":"Nam-Seog Kim","orcid":"https://orcid.org/0000-0002-1039-5945"},"institutions":[{"id":"https://openalex.org/I163753206","display_name":"Chungbuk National University","ror":"https://ror.org/02wnxgj78","country_code":"KR","type":"education","lineage":["https://openalex.org/I163753206"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Nam-Seog Kim","raw_affiliation_strings":["School of Information and Communication Engineering, Chungbuk National University, Cheongju-si, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0002-1039-5945","affiliations":[{"raw_affiliation_string":"School of Information and Communication Engineering, Chungbuk National University, Cheongju-si, Republic of Korea","institution_ids":["https://openalex.org/I163753206"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":1.9039,"has_fulltext":true,"cited_by_count":11,"citation_normalized_percentile":{"value":0.85233186,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":99},"biblio":{"volume":"12","issue":null,"first_page":"5081","last_page":"5091"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9979000091552734,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.7518225908279419},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6291762590408325},{"id":"https://openalex.org/keywords/neuromorphic-engineering","display_name":"Neuromorphic engineering","score":0.4871249198913574},{"id":"https://openalex.org/keywords/crossbar-switch","display_name":"Crossbar switch","score":0.4640948176383972},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.41860175132751465},{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.41472291946411133},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4142051935195923},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.3579091429710388},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.32806363701820374},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.2969277501106262},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2840627431869507},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.17194780707359314},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.1465468406677246},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12467288970947266}],"concepts":[{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.7518225908279419},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6291762590408325},{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.4871249198913574},{"id":"https://openalex.org/C29984679","wikidata":"https://www.wikidata.org/wiki/Q1929149","display_name":"Crossbar switch","level":2,"score":0.4640948176383972},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.41860175132751465},{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.41472291946411133},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4142051935195923},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.3579091429710388},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.32806363701820374},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2969277501106262},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2840627431869507},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17194780707359314},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.1465468406677246},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12467288970947266},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2024.3349463","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2024.3349463","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/10379796.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:b491aca880394b65be0b7a9e60c48a1e","is_oa":true,"landing_page_url":"https://doaj.org/article/b491aca880394b65be0b7a9e60c48a1e","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 12, Pp 5081-5091 (2024)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2024.3349463","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2024.3349463","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/10379796.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.9100000262260437,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G1474775643","display_name":null,"funder_award_id":"2022M3F3A2A01044952","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G7238387873","display_name":null,"funder_award_id":"BK21 program","funder_id":"https://openalex.org/F4320321203","funder_display_name":"Chungbuk National University"},{"id":"https://openalex.org/G885821260","display_name":null,"funder_award_id":"BK21 program","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"}],"funders":[{"id":"https://openalex.org/F4320320671","display_name":"National Research Foundation","ror":"https://ror.org/05s0g1g46"},{"id":"https://openalex.org/F4320321203","display_name":"Chungbuk National University","ror":"https://ror.org/02wnxgj78"},{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320322202","display_name":"IC Design Education Center","ror":"https://ror.org/005v57z85"},{"id":"https://openalex.org/F4320328359","display_name":"Ministry of Science and ICT, South Korea","ror":"https://ror.org/01wpjm123"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4390534111.pdf","grobid_xml":"https://content.openalex.org/works/W4390534111.grobid-xml"},"referenced_works_count":30,"referenced_works":["https://openalex.org/W1975647260","https://openalex.org/W1979260777","https://openalex.org/W1982005081","https://openalex.org/W1999085092","https://openalex.org/W2004823737","https://openalex.org/W2006899770","https://openalex.org/W2029505831","https://openalex.org/W2109770444","https://openalex.org/W2118803816","https://openalex.org/W2214682759","https://openalex.org/W2288050971","https://openalex.org/W2328407804","https://openalex.org/W2518281301","https://openalex.org/W2526202524","https://openalex.org/W2584169625","https://openalex.org/W2626323707","https://openalex.org/W2736591611","https://openalex.org/W2792893539","https://openalex.org/W2912892722","https://openalex.org/W2915431062","https://openalex.org/W2921796727","https://openalex.org/W3010570341","https://openalex.org/W3013080934","https://openalex.org/W3032936265","https://openalex.org/W3161970973","https://openalex.org/W3212206356","https://openalex.org/W4281628293","https://openalex.org/W4302306261","https://openalex.org/W4408137644","https://openalex.org/W6845511776"],"related_works":["https://openalex.org/W1872623660","https://openalex.org/W3207218810","https://openalex.org/W4292697011","https://openalex.org/W3212508523","https://openalex.org/W1995352804","https://openalex.org/W4386475142","https://openalex.org/W2909534142","https://openalex.org/W2793181810","https://openalex.org/W1940420793","https://openalex.org/W4367187682"],"abstract_inverted_index":{"A":[0],"new":[1],"non-volatile":[2],"memory,":[3],"resistive":[4],"random":[5],"access":[6],"memory":[7,11],"(RRAM),":[8],"enables":[9],"computein-":[10],"(CIM)-based":[12],"hardware":[13],"accelerators":[14],"with":[15,151,178,194],"improved":[16],"throughput":[17],"and":[18,66,79,102,105,119,130,161,186],"energy":[19],"efficiency,":[20],"further":[21],"enabling":[22],"machine":[23],"learning":[24],"instant-on":[25],"inference":[26],"at":[27],"the":[28,49,72,93,136,163],"edge.":[29],"However,":[30],"sneak-path":[31,164],"currents":[32],"in":[33],"RRAM":[34,58,87],"crossbar":[35],"array":[36],"(CBA)":[37],"can":[38],"cause":[39],"crosstalk,":[40],"limiting":[41],"their":[42],"high-density":[43],"applications.":[44],"Self-rectifying":[45],"RRAMs":[46],"(SRR)":[47],"are":[48],"best":[50],"choice":[51],"for":[52,77],"suppressing":[53],"leakage":[54],"currents.":[55],"The":[56,90,138],"interface-type":[57,86],"provides":[59],"CMOS":[60],"compatibility,":[61],"better":[62],"controllability,":[63],"high":[64,124],"reliability,":[65],"lower":[67],"power":[68],"consumption":[69],"compared":[70,134],"to":[71,135,143,167,181],"filament-type.":[73],"In":[74],"this":[75],"paper,":[76],"circuit":[78],"system":[80],"exploration,":[81],"a":[82,110,123,144],"compact":[83],"model":[84,91,113,140],"of":[85,126,184,191],"is":[88,141,159],"developed.":[89],"includes":[92],"Schottky":[94],"barrier":[95],"diode,":[96],"effective":[97],"layer":[98],"resistance,":[99],"nano-battery":[100,156],"effect,":[101],"parasitic":[103],"resistance":[104],"capacitance.":[106],"Moreover,":[107,155],"it":[108],"has":[109],"dynamic":[111],"behavior":[112],"such":[114],"as":[115],"device-to-device":[116],"variation,":[117],"retention,":[118],"endurance.":[120],"It":[121],"reproduces":[122],"accuracy":[125,201],"98.97%":[127],"on":[128,132],"DC":[129],"98.05%":[131],"AC":[133],"measurements.":[137],"proposed":[139,160],"applied":[142],"neuromorphic":[145],"64":[146,148],"\u00d7":[147],"SRR":[149],"CBA":[150],"32-bit":[152],"fixedpoint":[153],"precision.":[154],"bias":[157],"scheme":[158],"reduces":[162],"current":[165],"error":[166],"0.02":[168],"%.":[169],"Vector":[170],"matrix":[171],"multiplication":[172],"(VMM)":[173],"application":[174],"shows":[175],"3.44":[176],"TOPS/W":[177],"an":[179],"LRS":[180],"HRS":[182],"ratio":[183],"50:50,":[185],"deep":[187],"neural":[188],"network":[189],"(DNN)":[190],"VGG-8":[192],"architecture":[193],"CIFAR-10":[195],"datasets":[196],"observes":[197],"that":[198],"1.36":[199],"%":[200],"degradation.":[202]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}