{"id":"https://openalex.org/W4389065339","doi":"https://doi.org/10.1109/access.2023.3336990","title":"Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction","display_name":"Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction","publication_year":2023,"publication_date":"2023-01-01","ids":{"openalex":"https://openalex.org/W4389065339","doi":"https://doi.org/10.1109/access.2023.3336990"},"language":"en","primary_location":{"id":"doi:10.1109/access.2023.3336990","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2023.3336990","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/10328855.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/10328855.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5012386664","display_name":"Longfei Yang","orcid":"https://orcid.org/0000-0003-4153-9670"},"institutions":[{"id":"https://openalex.org/I187400657","display_name":"South China Normal University","ror":"https://ror.org/01kq0pv72","country_code":"CN","type":"education","lineage":["https://openalex.org/I187400657"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Longfei Yang","raw_affiliation_strings":["Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","Institute of semiconductors science and technology, South China Normal University, Guangzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657","https://openalex.org/I4210149211"]},{"raw_affiliation_string":"Institute of semiconductors science and technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100324502","display_name":"Huiqing Sun","orcid":"https://orcid.org/0000-0002-4136-1123"},"institutions":[{"id":"https://openalex.org/I187400657","display_name":"South China Normal University","ror":"https://ror.org/01kq0pv72","country_code":"CN","type":"education","lineage":["https://openalex.org/I187400657"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Huiqing Sun","raw_affiliation_strings":["Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","Institute of semiconductors science and technology, South China Normal University, Guangzhou, China"],"raw_orcid":"https://orcid.org/0000-0002-4136-1123","affiliations":[{"raw_affiliation_string":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657","https://openalex.org/I4210149211"]},{"raw_affiliation_string":"Institute of semiconductors science and technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102935514","display_name":"Ruipeng Lv","orcid":"https://orcid.org/0009-0000-0724-7629"},"institutions":[{"id":"https://openalex.org/I187400657","display_name":"South China Normal University","ror":"https://ror.org/01kq0pv72","country_code":"CN","type":"education","lineage":["https://openalex.org/I187400657"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ruipeng Lv","raw_affiliation_strings":["Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","Institute of semiconductors science and technology, South China Normal University, Guangzhou, China"],"raw_orcid":"https://orcid.org/0009-0000-0724-7629","affiliations":[{"raw_affiliation_string":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657","https://openalex.org/I4210149211"]},{"raw_affiliation_string":"Institute of semiconductors science and technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104317114","display_name":"Zhen Liu","orcid":"https://orcid.org/0009-0003-5653-970X"},"institutions":[{"id":"https://openalex.org/I187400657","display_name":"South China Normal University","ror":"https://ror.org/01kq0pv72","country_code":"CN","type":"education","lineage":["https://openalex.org/I187400657"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhen Liu","raw_affiliation_strings":["Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","Institute of semiconductors science and technology, South China Normal University, Guangzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657","https://openalex.org/I4210149211"]},{"raw_affiliation_string":"Institute of semiconductors science and technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101757765","display_name":"Yuanhao Zhang","orcid":"https://orcid.org/0000-0003-3448-8924"},"institutions":[{"id":"https://openalex.org/I187400657","display_name":"South China Normal University","ror":"https://ror.org/01kq0pv72","country_code":"CN","type":"education","lineage":["https://openalex.org/I187400657"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuanhao Zhang","raw_affiliation_strings":["Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","Institute of semiconductors science and technology, South China Normal University, Guangzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657","https://openalex.org/I4210149211"]},{"raw_affiliation_string":"Institute of semiconductors science and technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006247993","display_name":"Penglin Wang","orcid":null},"institutions":[{"id":"https://openalex.org/I187400657","display_name":"South China Normal University","ror":"https://ror.org/01kq0pv72","country_code":"CN","type":"education","lineage":["https://openalex.org/I187400657"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Penglin Wang","raw_affiliation_strings":["Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","Institute of semiconductors science and technology, South China Normal University, Guangzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657","https://openalex.org/I4210149211"]},{"raw_affiliation_string":"Institute of semiconductors science and technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100600996","display_name":"Yuan Li","orcid":"https://orcid.org/0000-0001-5081-6102"},"institutions":[{"id":"https://openalex.org/I187400657","display_name":"South China Normal University","ror":"https://ror.org/01kq0pv72","country_code":"CN","type":"education","lineage":["https://openalex.org/I187400657"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuan Li","raw_affiliation_strings":["Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","Institute of semiconductors science and technology, South China Normal University, Guangzhou, China"],"raw_orcid":"https://orcid.org/0000-0001-5081-6102","affiliations":[{"raw_affiliation_string":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657","https://openalex.org/I4210149211"]},{"raw_affiliation_string":"Institute of semiconductors science and technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101949193","display_name":"Yong Huang","orcid":"https://orcid.org/0000-0001-8095-4215"},"institutions":[{"id":"https://openalex.org/I4210122543","display_name":"Guangdong Polytechnic Normal University","ror":"https://ror.org/02pcb5m77","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210122543"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yong Huang","raw_affiliation_strings":["Guangdong Polytechnic Normal University, Guangzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Guangdong Polytechnic Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I4210122543"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5028764542","display_name":"Zhiyou Guo","orcid":"https://orcid.org/0000-0001-5563-3719"},"institutions":[{"id":"https://openalex.org/I187400657","display_name":"South China Normal University","ror":"https://ror.org/01kq0pv72","country_code":"CN","type":"education","lineage":["https://openalex.org/I187400657"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhiyou Guo","raw_affiliation_strings":["Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","Institute of semiconductors science and technology, South China Normal University, Guangzhou, China"],"raw_orcid":"https://orcid.org/0000-0001-5563-3719","affiliations":[{"raw_affiliation_string":"Institute of Semiconductors Science and Technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657","https://openalex.org/I4210149211"]},{"raw_affiliation_string":"Institute of semiconductors science and technology, South China Normal University, Guangzhou, China","institution_ids":["https://openalex.org/I187400657"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5012386664"],"corresponding_institution_ids":["https://openalex.org/I187400657","https://openalex.org/I4210149211"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":1.1027,"has_fulltext":true,"cited_by_count":6,"citation_normalized_percentile":{"value":0.76526693,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":"11","issue":null,"first_page":"134230","last_page":"134238"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.9356659650802612},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.8704972267150879},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6322169303894043},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5909359455108643},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5668312311172485},{"id":"https://openalex.org/keywords/microwave","display_name":"Microwave","score":0.5331539511680603},{"id":"https://openalex.org/keywords/oscillation","display_name":"Oscillation (cell signaling)","score":0.44747066497802734},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.43643930554389954},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4237158000469208},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4144824147224426},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3342445194721222},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3215956687927246},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.1963186264038086},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14254271984100342},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.11887297034263611},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.11472657322883606},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.10158708691596985}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.9356659650802612},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8704972267150879},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6322169303894043},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5909359455108643},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5668312311172485},{"id":"https://openalex.org/C44838205","wikidata":"https://www.wikidata.org/wiki/Q127995","display_name":"Microwave","level":2,"score":0.5331539511680603},{"id":"https://openalex.org/C2778439541","wikidata":"https://www.wikidata.org/wiki/Q7106412","display_name":"Oscillation (cell signaling)","level":2,"score":0.44747066497802734},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.43643930554389954},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4237158000469208},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4144824147224426},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3342445194721222},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3215956687927246},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1963186264038086},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14254271984100342},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.11887297034263611},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.11472657322883606},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.10158708691596985},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2023.3336990","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2023.3336990","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/10328855.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:7e4d102b6e8445b392322bf85fd46358","is_oa":true,"landing_page_url":"https://doaj.org/article/7e4d102b6e8445b392322bf85fd46358","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 11, Pp 134230-134238 (2023)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2023.3336990","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2023.3336990","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/10328855.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.800000011920929,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4389065339.pdf","grobid_xml":"https://content.openalex.org/works/W4389065339.grobid-xml"},"referenced_works_count":27,"referenced_works":["https://openalex.org/W1972815456","https://openalex.org/W2021890362","https://openalex.org/W2055342126","https://openalex.org/W2057817301","https://openalex.org/W2111921124","https://openalex.org/W2123595383","https://openalex.org/W2150843683","https://openalex.org/W2758083122","https://openalex.org/W2884700596","https://openalex.org/W2941167116","https://openalex.org/W2994476408","https://openalex.org/W2998156325","https://openalex.org/W3011076167","https://openalex.org/W3121104139","https://openalex.org/W3131376090","https://openalex.org/W3169742612","https://openalex.org/W4206167811","https://openalex.org/W4289515783","https://openalex.org/W4308506737","https://openalex.org/W4310612474","https://openalex.org/W4316661144","https://openalex.org/W4317792910","https://openalex.org/W4352976915","https://openalex.org/W4375929078","https://openalex.org/W4377000134","https://openalex.org/W4378676139","https://openalex.org/W6636309975"],"related_works":["https://openalex.org/W3063337879","https://openalex.org/W3158277807","https://openalex.org/W1964679965","https://openalex.org/W2249766267","https://openalex.org/W2389330181","https://openalex.org/W2066729282","https://openalex.org/W3126073919","https://openalex.org/W2030723586","https://openalex.org/W1918525957","https://openalex.org/W3115561561"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,11,31,59,78,114,123,155],"GaN-based":[4,161],"High":[5],"Electron":[6],"Mobility":[7],"Transistor":[8],"(HEMT)":[9],"with":[10,58,113,163],"connected":[12],"dual-channel":[13],"structure":[14,153],"(CDC-HEMT).":[15],"Specifically,":[16],"the":[17,21,25,37,43,52,94,107,134,151],"Al0.05Ga0.95N":[18],"layer":[19],"beneath":[20],"first":[22],"channel":[23,27],"enables":[24],"second":[26],"to":[28,48,67,85],"be":[29],"in":[30,42,144,166],"non-conducting":[32],"state":[33],"while":[34],"simultaneously":[35],"increasing":[36],"number":[38],"of":[39,106,119,127],"electrons":[40],"available":[41],"conducting":[44],"state.":[45],"In":[46],"contrast":[47],"conventional":[49],"normally-off":[50],"devices,":[51],"CDC-HEMT":[53,152],"exhibits":[54],"excellent":[55],"DC":[56],"performance,":[57,112],"saturation":[60],"current":[61,115],"density":[62],"increase":[63,81],"from":[64,82],"0.67":[65],"A/mm":[66,69],"1.52":[68],"at":[70],"V":[71,76],"<sub":[72],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[73],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">ds</sub>":[74],"=10":[75],"and":[77,122,169],"maximum":[79,124],"transconductance":[80,96],"0.30":[83],"S":[84],"0.62":[86],"S,":[87],"which":[88],"is":[89,98,154],"twice":[90],"as":[91],"much.":[92],"Furthermore,":[93],"optimal":[95],"interval":[97],"widened":[99],"by":[100],"1":[101],"V.":[102],"The":[103,140],"RF":[104],"performance":[105,165],"devices":[108],"also":[109],"demonstrates":[110],"remarkable":[111],"gain":[116],"cut-off":[117],"frequency":[118,126],"31.8":[120],"GHz":[121],"oscillation":[125],"77":[128],"GHz.":[129],"Under":[130],"square":[131],"wave":[132],"testing,":[133],"transistors":[135],"exhibit":[136],"extremely":[137],"low":[138],"delay.":[139],"exceptional":[141],"findings":[142],"showcased":[143],"this":[145],"study":[146],"provide":[147],"compelling":[148],"evidence":[149],"that":[150],"highly":[156],"promising":[157],"technique":[158],"for":[159],"utilizing":[160],"HEMTs":[162],"superior":[164],"power":[167],"switching":[168],"microwave":[170],"applications.":[171]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":2}],"updated_date":"2026-05-06T08:25:59.206177","created_date":"2025-10-10T00:00:00"}