{"id":"https://openalex.org/W4386183387","doi":"https://doi.org/10.1109/access.2023.3308592","title":"Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET","display_name":"Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET","publication_year":2023,"publication_date":"2023-01-01","ids":{"openalex":"https://openalex.org/W4386183387","doi":"https://doi.org/10.1109/access.2023.3308592"},"language":"en","primary_location":{"id":"doi:10.1109/access.2023.3308592","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2023.3308592","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/10230235.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/10230235.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5112987960","display_name":"Myoungsu Son","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Myoungsu Son","raw_affiliation_strings":["Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, South Korea","Semiconductor R&D Center, Samsung Electronics, Hwasung, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, South Korea","institution_ids":["https://openalex.org/I848706"]},{"raw_affiliation_string":"Semiconductor R&D Center, Samsung Electronics, Hwasung, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091544725","display_name":"Juho Sung","orcid":"https://orcid.org/0009-0007-5629-5978"},"institutions":[{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Juho Sung","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea"],"raw_orcid":"https://orcid.org/0009-0007-5629-5978","affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea","institution_ids":["https://openalex.org/I848706"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010353613","display_name":"Hyoung Won Baac","orcid":"https://orcid.org/0000-0001-9295-6162"},"institutions":[{"id":"https://openalex.org/I848706","display_name":"Sungkyunkwan University","ror":"https://ror.org/04q78tk20","country_code":"KR","type":"education","lineage":["https://openalex.org/I848706"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyoung Won Baac","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea","institution_ids":["https://openalex.org/I848706"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5039545794","display_name":"Changhwan Shin","orcid":"https://orcid.org/0000-0001-6057-3773"},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Changhwan Shin","raw_affiliation_strings":["School of Electrical Engineering, Korea University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0001-6057-3773","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Korea University, Seoul, South Korea","institution_ids":["https://openalex.org/I197347611"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":1.9634,"has_fulltext":true,"cited_by_count":16,"citation_normalized_percentile":{"value":0.86495941,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"11","issue":null,"first_page":"96170","last_page":"96176"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.9426910281181335},{"id":"https://openalex.org/keywords/fin","display_name":"Fin","score":0.6629443168640137},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5020232200622559},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.48639681935310364},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4510003924369812},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3544241189956665},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.20274421572685242},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1684364378452301},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.15393155813217163},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08242672681808472},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.06366768479347229}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.9426910281181335},{"id":"https://openalex.org/C91721477","wikidata":"https://www.wikidata.org/wiki/Q778612","display_name":"Fin","level":2,"score":0.6629443168640137},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5020232200622559},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.48639681935310364},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4510003924369812},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3544241189956665},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.20274421572685242},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1684364378452301},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.15393155813217163},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08242672681808472},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.06366768479347229}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2023.3308592","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2023.3308592","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/10230235.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:a9339263b5a74a0fa8d0760f046961f9","is_oa":true,"landing_page_url":"https://doaj.org/article/a9339263b5a74a0fa8d0760f046961f9","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 11, Pp 96170-96176 (2023)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2023.3308592","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2023.3308592","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/10230235.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G3802875617","display_name":null,"funder_award_id":"2020R1A2C1009063","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G8975431054","display_name":null,"funder_award_id":"2020R1A2C1009063","funder_id":"https://openalex.org/F4320322030","funder_display_name":"Ministry of Science, ICT and Future Planning"}],"funders":[{"id":"https://openalex.org/F4320320671","display_name":"National Research Foundation","ror":"https://ror.org/05s0g1g46"},{"id":"https://openalex.org/F4320322030","display_name":"Ministry of Science, ICT and Future Planning","ror":"https://ror.org/032e49973"},{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4386183387.pdf","grobid_xml":"https://content.openalex.org/works/W4386183387.grobid-xml"},"referenced_works_count":27,"referenced_works":["https://openalex.org/W1024010695","https://openalex.org/W1976569134","https://openalex.org/W1998410624","https://openalex.org/W2000241588","https://openalex.org/W2011701663","https://openalex.org/W2018121445","https://openalex.org/W2082026549","https://openalex.org/W2103227017","https://openalex.org/W2107317103","https://openalex.org/W2113264920","https://openalex.org/W2114853176","https://openalex.org/W2115567121","https://openalex.org/W2135674775","https://openalex.org/W2141415096","https://openalex.org/W2146131591","https://openalex.org/W2158161062","https://openalex.org/W2162494392","https://openalex.org/W2518690522","https://openalex.org/W2558029824","https://openalex.org/W2586382377","https://openalex.org/W2697984507","https://openalex.org/W2744343263","https://openalex.org/W2913404074","https://openalex.org/W4376606672","https://openalex.org/W6676181634","https://openalex.org/W6758959293","https://openalex.org/W6851850690"],"related_works":["https://openalex.org/W2326188151","https://openalex.org/W2031432268","https://openalex.org/W2386361943","https://openalex.org/W2149895879","https://openalex.org/W4250300609","https://openalex.org/W2010357007","https://openalex.org/W2545707786","https://openalex.org/W2473578222","https://openalex.org/W2264082943","https://openalex.org/W2102078456"],"abstract_inverted_index":{"Superior":[0],"scalability":[1],"and":[2,166],"better":[3],"gate-to-channel":[4],"capacitive":[5],"coupling":[6],"can":[7,138,147,173],"be":[8,139,174,178],"achieved":[9],"with":[10,61,182],"adopting":[11],"gate-all-around":[12],"(GAA)":[13],"device":[14,20,24,47,55,67],"architecture.":[15],"However,":[16],"compared":[17],"against":[18],"FinFET":[19,54,90,192],"structure,":[21,189],"the":[22,46,52,71,77,105,136,163,171,187,190],"GAA":[23],"is":[25,36,86],"not":[26,37],"very":[27,179],"cost-effective.":[28],"In":[29,42],"addition,":[30],"its":[31,129],"yield":[32],"for":[33,50,141,153,168],"mass":[34],"production":[35],"as":[38,40],"high":[39,142],"expected.":[41],"order":[43],"to":[44,69],"explore":[45],"design":[48],"option":[49],"extending":[51],"current":[53,116,164,191],"out,":[56],"we":[57],"have":[58],"come":[59],"up":[60],"a":[62,87,93,112,149,154],"new":[63],"idea,":[64],"i.e.,":[65],"novel":[66,83],"structure":[68,85],"increase":[70],"effective":[72,132],"channel":[73,133,151],"width":[74,152],"without":[75],"affecting":[76],"contact":[78],"poly":[79],"pitch":[80],"(CPP).":[81],"A":[82],"u-FinFET":[84,106,137,172,188],"type":[88],"of":[89,128,161,185],"that":[91,104],"has":[92],"u-shaped":[94],"channel.":[95],"By":[96],"using":[97,162,186],"3-D":[98],"TCAD":[99],"simulation,":[100],"it":[101,146],"turned":[102],"out":[103],"(vs.":[107],"conventional":[108],"bulk/SOI":[109,169],"FinFETs)":[110],"shows":[111],"27.3%":[113],"higher":[114],"drain":[115],"at":[117],"<italic":[118],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[119,122],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">V</i>":[120],"<sub":[121],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">GS</sub>":[123],"=":[124],"0.7":[125],"V":[126],"because":[127,145],"28.7%":[130],"wider":[131,150],"width.":[134],"Especially,":[135],"adopted":[140],"performance":[143],"applications":[144],"implement":[148],"given":[155],"layout":[156],"area.":[157],"Moreover,":[158],"taking":[159,183],"advantages":[160,184],"processes":[165],"materials":[167],"FinFET,":[170],"fabricated":[175],"(which":[176],"must":[177],"cost-effective).":[180],"Hence,":[181],"platform":[193],"would":[194],"last":[195],"more.":[196]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":9},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}