{"id":"https://openalex.org/W4316660988","doi":"https://doi.org/10.1109/access.2023.3237026","title":"TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE","display_name":"TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE","publication_year":2023,"publication_date":"2023-01-01","ids":{"openalex":"https://openalex.org/W4316660988","doi":"https://doi.org/10.1109/access.2023.3237026"},"language":"en","primary_location":{"id":"doi:10.1109/access.2023.3237026","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2023.3237026","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/10005208/10017250.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/10005208/10017250.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5080980065","display_name":"Luigi Balestra","orcid":"https://orcid.org/0000-0002-0598-899X"},"institutions":[{"id":"https://openalex.org/I9360294","display_name":"University of Bologna","ror":"https://ror.org/01111rn36","country_code":"IT","type":"education","lineage":["https://openalex.org/I9360294"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Luigi Balestra","raw_affiliation_strings":["Advanced Research Center on Electronic Systems “E. De Castro” (ARCES), University of Bologna, Bologna, Italy","Department of Electronics (DEI), University of Bologna, Bologna, Italy"],"raw_orcid":"https://orcid.org/0000-0002-0598-899X","affiliations":[{"raw_affiliation_string":"Advanced Research Center on Electronic Systems “E. De Castro” (ARCES), University of Bologna, Bologna, Italy","institution_ids":["https://openalex.org/I9360294"]},{"raw_affiliation_string":"Department of Electronics (DEI), University of Bologna, Bologna, Italy","institution_ids":["https://openalex.org/I9360294"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021504317","display_name":"Franco Ercolano","orcid":"https://orcid.org/0009-0005-9720-4695"},"institutions":[{"id":"https://openalex.org/I9360294","display_name":"University of Bologna","ror":"https://ror.org/01111rn36","country_code":"IT","type":"education","lineage":["https://openalex.org/I9360294"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Franco Ercolano","raw_affiliation_strings":["Advanced Research Center on Electronic Systems “E. De Castro” (ARCES), University of Bologna, Bologna, Italy","Department of Electronics (DEI), University of Bologna, Bologna, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Research Center on Electronic Systems “E. De Castro” (ARCES), University of Bologna, Bologna, Italy","institution_ids":["https://openalex.org/I9360294"]},{"raw_affiliation_string":"Department of Electronics (DEI), University of Bologna, Bologna, Italy","institution_ids":["https://openalex.org/I9360294"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063880764","display_name":"Elena Gnani","orcid":"https://orcid.org/0000-0001-6949-5919"},"institutions":[{"id":"https://openalex.org/I9360294","display_name":"University of Bologna","ror":"https://ror.org/01111rn36","country_code":"IT","type":"education","lineage":["https://openalex.org/I9360294"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Elena Gnani","raw_affiliation_strings":["Advanced Research Center on Electronic Systems “E. De Castro” (ARCES), University of Bologna, Bologna, Italy","Department of Electronics (DEI), University of Bologna, Bologna, Italy"],"raw_orcid":"https://orcid.org/0000-0001-6949-5919","affiliations":[{"raw_affiliation_string":"Advanced Research Center on Electronic Systems “E. De Castro” (ARCES), University of Bologna, Bologna, Italy","institution_ids":["https://openalex.org/I9360294"]},{"raw_affiliation_string":"Department of Electronics (DEI), University of Bologna, Bologna, Italy","institution_ids":["https://openalex.org/I9360294"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5031723360","display_name":"Susanna Reggiani","orcid":"https://orcid.org/0000-0002-9616-8558"},"institutions":[{"id":"https://openalex.org/I9360294","display_name":"University of Bologna","ror":"https://ror.org/01111rn36","country_code":"IT","type":"education","lineage":["https://openalex.org/I9360294"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Susanna Reggiani","raw_affiliation_strings":["Advanced Research Center on Electronic Systems “E. De Castro” (ARCES), University of Bologna, Bologna, Italy","Department of Electronics (DEI), University of Bologna, Bologna, Italy"],"raw_orcid":"https://orcid.org/0000-0002-9616-8558","affiliations":[{"raw_affiliation_string":"Advanced Research Center on Electronic Systems “E. De Castro” (ARCES), University of Bologna, Bologna, Italy","institution_ids":["https://openalex.org/I9360294"]},{"raw_affiliation_string":"Department of Electronics (DEI), University of Bologna, Bologna, Italy","institution_ids":["https://openalex.org/I9360294"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I9360294"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.00398465,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"11","issue":null,"first_page":"6293","last_page":"6298"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/boltzmann-equation","display_name":"Boltzmann equation","score":0.7780446410179138},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.7754379510879517},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.48340904712677},{"id":"https://openalex.org/keywords/wurtzite-crystal-structure","display_name":"Wurtzite crystal structure","score":0.4529203772544861},{"id":"https://openalex.org/keywords/computational-physics","display_name":"Computational physics","score":0.4515754282474518},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.43528956174850464},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.41251927614212036},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.38148462772369385},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3634648621082306},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.329086571931839},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.32703185081481934},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2824033498764038},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.22858235239982605},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2008468210697174},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.14914512634277344},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.10339736938476562},{"id":"https://openalex.org/keywords/diffraction","display_name":"Diffraction","score":0.10000941157341003}],"concepts":[{"id":"https://openalex.org/C165995430","wikidata":"https://www.wikidata.org/wiki/Q891653","display_name":"Boltzmann equation","level":2,"score":0.7780446410179138},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.7754379510879517},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.48340904712677},{"id":"https://openalex.org/C3045981","wikidata":"https://www.wikidata.org/wiki/Q8039317","display_name":"Wurtzite crystal structure","level":3,"score":0.4529203772544861},{"id":"https://openalex.org/C30475298","wikidata":"https://www.wikidata.org/wiki/Q909554","display_name":"Computational physics","level":1,"score":0.4515754282474518},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.43528956174850464},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.41251927614212036},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.38148462772369385},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3634648621082306},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.329086571931839},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.32703185081481934},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2824033498764038},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.22858235239982605},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2008468210697174},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.14914512634277344},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10339736938476562},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.10000941157341003},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/access.2023.3237026","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2023.3237026","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/10005208/10017250.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:cris.unibo.it:11585/923752","is_oa":true,"landing_page_url":"https://ieeexplore.ieee.org/document/10017250","pdf_url":null,"source":{"id":"https://openalex.org/S4306402579","display_name":"Archivio istituzionale della ricerca (Alma Mater Studiorum Universit\u00e0 di Bologna)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4210117483","host_organization_name":"Istituto di Ematologia di Bologna","host_organization_lineage":["https://openalex.org/I4210117483"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:doaj.org/article:3792ea33f2f94501a32f5f5801d80987","is_oa":true,"landing_page_url":"https://doaj.org/article/3792ea33f2f94501a32f5f5801d80987","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 11, Pp 6293-6298 (2023)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2023.3237026","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2023.3237026","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/10005208/10017250.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G601892454","display_name":"GaN for Advanced Power Applications","funder_award_id":"101007310","funder_id":"https://openalex.org/F4320320300","funder_display_name":"European Commission"}],"funders":[{"id":"https://openalex.org/F4320320300","display_name":"European Commission","ror":"https://ror.org/00k4n6c32"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4316660988.pdf","grobid_xml":"https://content.openalex.org/works/W4316660988.grobid-xml"},"referenced_works_count":19,"referenced_works":["https://openalex.org/W1978923486","https://openalex.org/W1981368803","https://openalex.org/W1987188049","https://openalex.org/W1994470693","https://openalex.org/W2036113194","https://openalex.org/W2039864271","https://openalex.org/W2051252488","https://openalex.org/W2059036643","https://openalex.org/W2064404588","https://openalex.org/W2069740276","https://openalex.org/W2091798734","https://openalex.org/W2142537531","https://openalex.org/W2304435231","https://openalex.org/W2757803490","https://openalex.org/W2936899356","https://openalex.org/W3163158001","https://openalex.org/W3212391347","https://openalex.org/W4224292752","https://openalex.org/W4284680457"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2559825181","https://openalex.org/W4377089489","https://openalex.org/W1975307200","https://openalex.org/W3042786859","https://openalex.org/W2466508933","https://openalex.org/W4313611767","https://openalex.org/W4385217635","https://openalex.org/W244742193"],"abstract_inverted_index":{"Gallium":[0],"Nitride":[1],"(GaN)":[2],"High-Electron":[3],"Mobility":[4],"Transistors":[5],"(HEMTs)":[6],"actually":[7,95],"represent":[8],"one":[9],"of":[10,33,71,88,107,130,138,157,179,220],"the":[11,34,51,69,72,85,89,98,104,108,113,128,136,139,154,166,169,180,217,221],"best":[12],"candidates":[13],"for":[14,50,68,97,165,168,185],"medium-high":[15],"power":[16],"and":[17,27,153,159,188,194,206,225],"radio":[18],"frequency":[19],"applications.":[20],"As":[21],"they":[22],"operate":[23],"at":[24],"large":[25],"bias":[26],"electric":[28],"fields,":[29],"a":[30,47,64,120],"comprehensive":[31],"analysis":[32,129],"high-field":[35],"transport":[36,110],"properties":[37],"is":[38,93,211],"fundamentals,":[39],"as":[40,117,148],"hot":[41],"electrons":[42],"are":[43,82],"expected":[44],"to":[45,127,174,214,229],"play":[46],"relevant":[48],"role":[49],"device":[52],"reliability.":[53],"In":[54,101,172],"this":[55,102,134],"perspective,":[56],"Technology":[57],"Computer-Aided":[58],"Design":[59],"(TCAD)":[60],"simulations":[61],"can":[62],"be":[63],"very":[65],"useful":[66],"tool":[67],"understanding":[70],"phenomena":[73],"dominating":[74],"hot-electron":[75],"degradation":[76],"mechanisms.":[77],"The":[78,208],"most-accurate":[79],"modeling":[80],"approaches":[81],"based":[83],"on":[84],"direct":[86],"solution":[87,106],"Boltzmann":[90,109],"equation,":[91],"which":[92],"not":[94],"available":[96,202],"GaN":[99,131],"material.":[100],"work,":[103],"deterministic":[105],"equation":[111],"via":[112],"spherical-harmonics":[114],"expansion":[115],"(SHE-BTE),":[116],"incorporated":[118],"in":[119,149],"commercial":[121],"TCAD":[122],"tool,":[123],"has":[124,142,197],"been":[125,143,163,198],"extended":[126],"electrons.":[132],"To":[133],"purpose,":[135],"details":[137],"full-band":[140],"structure":[141],"derived":[144],"from":[145],"DFT":[146],"calculations":[147],"state-of-art":[150],"literature":[151],"works,":[152],"electron":[155,222],"density":[156,227],"states,$g(E)$,":[158],"group":[160],"velocity$u_{g}(E)$,":[161],"have":[162],"calculated":[164],"SHE-BTE":[167],"first":[170],"time.":[171],"addition":[173],"this,":[175],"an":[176],"accurate":[177],"calibration":[178],"total":[181],"scattering":[182,193],"rate":[183],"accounting":[184],"nonpolar":[186],"acoustic":[187],"optical":[189],"carrier-phonon":[190],"interaction,":[191],"Coulomb":[192],"impact":[195],"ionization":[196],"carried":[199],"out":[200],"against":[201],"Monte":[203],"Carlo":[204],"data":[205],"experiments.":[207],"proposed":[209],"model":[210],"also":[212],"shown":[213],"correctly":[215],"predict":[216],"temperature":[218],"dependence":[219],"impact-ionization":[223],"coefficient":[224],"current":[226],"up":[228],"breakdown.":[230]},"counts_by_year":[],"updated_date":"2026-08-06T08:24:18.245995","created_date":"2025-10-10T00:00:00"}